NXP Semiconductors MRF6V2010NBR5

Overview

MRF6V2010NBR5 from NXP Semiconductors is a lateral N-channel enhancement-mode RF power MOSFET designed for CW large-signal output and driver applications up to 450 MHz. It delivers 10 W CW output at 220 MHz with 23.9 dB power gain and 62% drain efficiency under 50 Vdc bias and 30 mA quiescent drain current, targeting industrial, medical, and scientific RF amplifier stages.

For engineers reviewing the MRF6V2010NBR5 datasheet, MRF6V2010NBR5 pinout, MRF6V2010NBR5 application, or MRF6V2010NBR5 equivalent, key selection criteria include its 50 V maximum drain-source voltage, TO-272-2 plastic package with exposed source, 225°C junction rating, 10:1 VSWR ruggedness, and verified 220 MHz/450 MHz impedance matching data.

Technical Context

This device operates in common-source configuration with characterized series-equivalent large-signal impedances at 64, 130, 220, and 450 MHz. Its gate threshold voltage is 1.68 V (typ), gate quiescent voltage is 2.68 V (typ) at 50 Vdc/30 mA, and it supports stable operation up to 225°C junction temperature with integrated ESD protection rated Class 2 HBM.

The MRF6V2010NBR5 is unmatched and requires external input/output matching networks. S-parameter data across 10–900 MHz confirms broadband gain response, with |S21| = 7.04 dB at 220 MHz and |S11| = 0.828 at –83.0°, enabling design of high-efficiency amplifiers in industrial RF heating, MRI excitation, and plasma generation systems.

Key Specifications

Pinout & Package

Package: TO-272-2 plastic package with exposed backside source terminal. Case operating temperature rated to 150°C; qualified for 50 V_DD operation and moisture sensitivity level 3 (peak reflow 260°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6V2010N and MRF6V2010GN, the MRF6V2010NBR5 offers identical RF performance but optimized for surface-mount reflow in TO-272-2, balancing thermal performance, manufacturability, and ruggedness for industrial RF amplifier modules.

Availability

MRF6V2010NBR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical MRI excitation, and scientific plasma generation requiring stable component supply and traceable sourcing.

Supply support for MRF6V2010NBR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, specializing in LDMOS and GaN technologies for industrial, automotive, and communications markets.

The MRF6V2010NBR5 belongs to NXP's MRF6V family of broadband RF power MOSFETs, engineered for rugged, high-efficiency amplification in demanding CW and pulsed RF applications from 10 MHz to 450 MHz.

FAQ

What is the maximum continuous drain-source voltage rating for the MRF6V2010NBR5?

The MRF6V2010NBR5 has a maximum drain-source voltage (V_DSS) rating of +110 Vdc, as specified in Table 1 of the official NXP datasheet. This rating allows safe operation under transient overvoltage conditions and supports robust amplifier designs in industrial RF systems where load mismatches may occur. The device is qualified for continuous operation up to 50 V_DD, with the 110 Vdc limit providing headroom for voltage spikes.

Does the MRF6V2010NBR5 require external gate protection diodes?

No, the MRF6V2010NBR5 incorporates integrated ESD protection rated Class 2 HBM (2 kV), Class A MM, and Class IV CDM per JESD22 standards. External gate protection diodes are not required for normal handling and operation, though proper PCB layout practices-such as short gate traces, local decoupling, and grounding of unused pads-remain essential to preserve RF performance and reliability.

What is the thermal resistance junction-to-case for the MRF6V2010NBR5?

The thermal resistance junction-to-case (R_θJC) for the MRF6V2010NBR5 is 3.5°C/W, measured at case temperature 81°C and 10 W CW output power (Table 2). This value assumes proper mounting per NXP Application Note AN3263 (bolt-down) or AN1907 (reflow), with direct thermal contact between the exposed source pad and a copper heatsink or thermal plane. Effective heatsinking is critical to maintain junction temperature ≤225°C.

Can the MRF6V2010NBR5 be used at 450 MHz with full 10 W output power?

Yes-the MRF6V2010NBR5 is characterized for operation up to 450 MHz, with verified large-signal impedance data (Z_source = 7.70 + j21.0 Ω, Z_load = 43.0 + j49.0 Ω) and S-parameters provided at that frequency. While typical CW output power remains 10 W, gain and efficiency decrease versus 220 MHz (e.g., G_ps ≈ 14 dB, η_D ≈ 45% per Figure 13 extrapolation); matching network optimization is required to achieve full rated output.

What package type does the MRF6V2010NBR5 use, and how is the source terminal accessed?

The MRF6V2010NBR5 uses the TO-272-2 plastic package. The source terminal is the exposed backside metal pad of the package, which must be soldered or mechanically clamped to the PCB ground plane or heatsink. Pins 1 and 2 are drain and gate respectively; no separate source lead exists-this construction provides low-inductance RF grounding and efficient thermal conduction essential for high-power RF operation.