My Inquiry
My Account
NXP Semiconductors MRF6V2150NBR1
- Part No.:
- MRF6V2150NBR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-272BB
- Datasheet:
-
MRF6V2150NBR1.pdf
- Description:
- RF MOSFET LDMOS 50V TO272-4
- Quantity:
- Payment:
- Shipping:
Inventory:4,960
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MRF6V2150NBR1 from Freescale Semiconductor is a high-power N-channel enhancement-mode lateral MOSFET designed for CW and large-signal RF power amplification up to 450 MHz. It delivers 150 W output at 220 MHz with 25 dB power gain and 68.3% drain efficiency under 50 Vdc bias and 450 mA quiescent current, targeting industrial, medical, and scientific RF amplifier stages.
For engineers reviewing the MRF6V2150NBR1 datasheet, MRF6V2150NBR1 pinout, MRF6V2150NBR1 application, or MRF6V2150NBR1 equivalent, key selection criteria include its 225°C junction rating, 10:1 VSWR ruggedness at 150 W, TO-270 WB-4 plastic package, and series-equivalent impedance characterization for broadband matching.
Technical Context
This device operates as a single-ended, unmatched RF power transistor optimized for fixed-frequency and broadband amplifier designs between 10–450 MHz. Its lateral LDMOS structure supports stable high-power operation with integrated ESD protection (HBM Class 2, MM Class A, CDM Class IV) and thermal resistance of 0.24°C/W (junction-to-case).
The MRF6V2150NBR1 is characterized using series-equivalent large-signal impedance parameters at 27 MHz, 220 MHz, and 450 MHz - enabling precise input/output matching network design. It is qualified for continuous operation up to 50 VDD and rated for 225°C maximum junction temperature, with case temperature limited to 150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 10–450 MHz - Supports broadband RF power amplification across HF/VHF/UHF bands without retuning. |
| Output Power (CW) | 150 W @ 220 MHz - Delivers full-rated RF output in continuous-wave mode with 50 Vdc supply and 450 mA IDQ. |
| Power Gain | 25 dB typical @ 220 MHz - Enables high-efficiency two-stage amplifier architectures with minimal driver stage complexity. |
| Drain Efficiency | 68.3% @ 220 MHz - Reduces thermal load and DC power consumption in high-duty-cycle RF systems. |
| Junction Temperature | 225°C max - Allows robust operation under high ambient or thermally constrained conditions when properly heatsinked. |
| VSWR Tolerance | 10:1 @ 50 Vdc, 220 MHz, 150 W - Withstands severe load mismatches without failure, critical for industrial RF heating and plasma generation. |
| Thermal Resistance | 0.24°C/W (RθJC) - Enables accurate junction temperature prediction and heatsink sizing for long-term reliability. |
| ESD Rating | HBM Class 2, MM Class A, CDM Class IV - Provides built-in protection against handling and board-level electrostatic discharge events. |
Pinout & Package
Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic overmolded, exposed source on backside. Designed for bolt-down or solder-reflow mounting per AN3263/AN1907.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (RF Input) | Control terminal; requires DC bias (1.5–3.5 V) and RF input matching network per Zsource data (e.g., 2.45 + j6.95 Ω @ 220 MHz). |
| Pin 2 | Drain (RF Output) | High-power RF output node; connects to output matching network and DC supply via RF choke; Zload = 3.90 + j5.50 Ω @ 220 MHz. |
| Pin 3 | Source (DC Return / Thermal Path) | Internally connected to exposed metal backside; serves as primary DC return path and main thermal conduction interface to heatsink. |
| Pin 4 | Source (DC Return / Thermal Path) | Duplicate source terminal for low-inductance grounding and enhanced thermal dissipation; must be bonded to same heatsink plane as Pin 3. |
Key Features
| Feature | Design Value |
|---|---|
| 225°C Capable Plastic Package | Enables high-reliability operation in sealed enclosures or high-ambient environments without ceramic packaging cost penalty. |
| 10:1 VSWR Ruggedness | Eliminates need for external circulators or isolators in mismatch-prone applications like RF plasma and induction heating. |
| Series-Equivalent Impedance Data | Provides exact Zsource/Zload values at 27/220/450 MHz - accelerates matching network synthesis and reduces prototyping iterations. |
| Integrated ESD Protection | Meets HBM Class 2, MM Class A, CDM Class IV - reduces risk of field failures and eliminates need for discrete gate protection diodes. |
| RoHS Compliant & Tape-and-Reel | R1 suffix denotes 500-unit 44 mm, 13-inch reel - supports automated SMT assembly while meeting environmental compliance requirements. |
Applications
| Industrial RF Heating | Medical Diathermy Systems |
|---|---|
|
Use Scenario: High-power RF energy delivery into dielectric materials (e.g., plastic welding, food processing, wood drying) requiring stable 150 W CW output at 27–450 MHz. IC Role / Device Role / Timing Role: Final-stage RF power amplifier operating in Class AB/C, directly driving resonant tank circuits. Use Value: 10:1 VSWR tolerance prevents shutdown during load variations; 68.3% efficiency minimizes cooling requirements in enclosed machinery. |
Use Scenario: Therapeutic deep-tissue heating in physiotherapy equipment operating at 27 MHz or 450 MHz with strict safety and stability requirements. IC Role / Device Role / Timing Role: Linear RF power stage delivering precisely controlled CW output into capacitive applicators. Use Value: 225°C junction rating ensures long life under continuous duty; RoHS compliance meets medical regulatory standards. |
| Scientific Plasma Generation | Broadband RF Test Amplifiers |
|
Use Scenario: Sustaining low-pressure plasma in research reactors or semiconductor process chambers using 150 W RF excitation at 13.56/27/450 MHz. IC Role / Device Role / Timing Role: Unmatched power transistor in solid-state RF generator, interfacing with impedance-matching networks. Use Value: Characterized Zsource/Zload data enables rapid custom matching; ruggedness handles dynamic plasma impedance shifts. |
Use Scenario: Lab-grade broadband RF amplifier for signal integrity testing, EMC pre-compliance, or component characterization from 10–450 MHz. IC Role / Device Role / Timing Role: High-linearity, high-power active element in modular test system front-end. Use Value: 25 dB gain and 150 W output support wide dynamic range; TO-270 package simplifies heatsinking in benchtop enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP61K25HR5 | Higher Pout (250 W), wider bandwidth (1.8–600 MHz), ceramic package (TO-272), higher cost and larger footprint. | Better suited for multi-band base station or broadband comms where frequency agility >450 MHz is required. | Select when needing >150 W output or operation beyond 450 MHz; not drop-in due to different package and biasing. |
| STMicroelectronics PD85015S | Lower Pout (150 W @ 225 MHz), 28 V operation, TO-247 package, lower gain (22 dB), no published VSWR rating. | Targeted at cost-sensitive industrial amplifiers where 50 V bias infrastructure is unavailable. | Choose for 28 V systems or simplified thermal management; verify VSWR capability separately for mismatched loads. |
Compared with MRF6V2150NBR1, the MRFE6VP61K25HR5 offers extended frequency coverage and higher power but demands ceramic-mounting expertise and higher BOM cost, while the PD85015S trades voltage headroom and ruggedness for lower-system-voltage compatibility and simpler heatsinking.
Availability
MRF6V2150NBR1 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy systems, scientific plasma generation, and broadband RF test amplifiers requiring stable component supply and long-lifecycle support.
Supply support for MRF6V2150NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-efficiency, high-reliability transistors for demanding industrial and scientific applications.
The MRF6V2150NBR1 belongs to Freescale's MRF6V family of lateral RF power MOSFETs, engineered specifically for rugged, high-efficiency CW amplification in non-telecom RF energy applications.
FAQ
What is the maximum continuous drain voltage rating for the MRF6V2150NBR1?
The MRF6V2150NBR1 has a maximum drain-source voltage (VDSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This allows safe operation under transient conditions and switching stresses up to 110 V, though the device is typically biased at 50 Vdc for optimal 150 W CW performance. The MRF6V2150NBR1 datasheet specifies this limit in Table 1 under Maximum Ratings.
Does the MRF6V2150NBR1 require external gate protection diodes?
No, the MRF6V2150NBR1 integrates ESD protection meeting HBM Class 2, MM Class A, and CDM Class IV standards, eliminating the need for discrete gate protection diodes in most applications. However, proper PCB layout (short traces, ground plane proximity) and adherence to AN1907/AN3263 mounting guidelines remain essential to preserve this protection in system-level use.
Can the MRF6V2150NBR1 be used at 450 MHz with full 150 W output?
Yes - the MRF6V2150NBR1 delivers 150 W CW output at 450 MHz, though with reduced efficiency (57.6%) and gain (22.9 dB) compared to its 220 MHz performance. Matching networks must be redesigned using the published Zsource (0.80 + j3.20 Ω) and Zload (2.20 + j2.30 Ω) values for 450 MHz to achieve this specification, as confirmed in the Typical Performances table.
What is the thermal resistance junction-to-case for the MRF6V2150NBR1?
The MRF6V2150NBR1 has a thermal resistance (RθJC) of 0.24°C/W when operated at 150 W CW with case temperature maintained at 80°C, as specified in Table 2. This value is measured under standardized conditions and is critical for calculating junction temperature rise and selecting appropriate heatsink thermal resistance in real-world designs.
Is the MRF6V2150NBR1 pin-compatible with the MRF6V2150NR1?
Yes - both MRF6V2150NBR1 and MRF6V2150NR1 share identical pinout (TO-270 WB-4 vs. TO-272 WB-4), electrical specifications, and thermal characteristics, differing only in package outline (Case 1486-03 vs. Case 1484-04) and mechanical dimensions. They are functionally interchangeable in existing designs, though mechanical fitment must be verified per respective package drawings.
MRF6V2150NBR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-272BB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 220MHz
- Gain:
- 25dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 450 mA
- Power - Output:
- 150W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-272 WB-4
MRF6V2150NBR1 FAQ
1.How can I place an order for MRF6V2150NBR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6V2150NBR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6V2150NBR1 reliable?
The price and inventory of MRF6V2150NBR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V2150NBR1 is usually 5 days.
3.What payment methods are accepted for MRF6V2150NBR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V2150NBR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6V2150NBR1?
MRF6V2150NBR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6V2150NBR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6V2150NBR1?
For technical support, including MRF6V2150NBR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V2150NBR1 requirements.
6.How does Aetrix verify that MRF6V2150NBR1 is sourced from the original manufacturer or authorized distributors?
All MRF6V2150NBR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V2150NBR1 meets industry standards.
7.What is the process for return or replacement of MRF6V2150NBR1?
All MRF6V2150NBR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V2150NBR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6V2150NBR1 part is unused and in its original packaging.
Return procedure for MRF6V2150NBR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF6V2150NBR1 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
