NXP Semiconductors MRF6V2150NBR5

Overview

MRF6V2150NBR5 from NXP Semiconductors (formerly Freescale) is a 150 W, 50 V lateral N-channel RF power MOSFET optimized for CW and large-signal driver applications up to 450 MHz. It delivers 25 dB power gain and 68.3% drain efficiency at 220 MHz under 50 Vdc, 450 mA bias, and is rated for 225°C junction operation in industrial, medical, and scientific RF amplifiers.

For engineers reviewing the MRF6V2150NBR5 datasheet, MRF6V2150NBR5 pinout, MRF6V2150NBR5 application, or MRF6V2150NBR5 equivalent, key selection criteria include its 10:1 VSWR ruggedness at 150 W CW, integrated ESD protection (HBM Class 2), TO-270 WB-4 plastic package, and series-equivalent impedance characterization at 27/220/450 MHz.

Technical Context

This device operates as an unmatched, single-ended broadband RF power amplifier stage with gate-controlled enhancement-mode conduction. Its lateral LDMOS structure supports high-voltage swing (VDSS = +110 Vdc), low on-resistance (VDS(on) = 0.26 V at 1 A), and stable large-signal performance across 10–450 MHz.

Thermal design is critical: RθJC = 0.24°C/W enables high-power dissipation when mounted correctly per AN3263 (bolt-down) or AN1907 (reflow), and junction temperature must be limited to 225°C with case temperature capped at 150°C.

Key Specifications

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic overmolded, exposed backside source terminal. Mounting requires thermal interface material and mechanical clamping per AN3263 or controlled reflow per AN1907.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRFE6VP61K25H and PD85015S, the MRF6V2150NBR5 uniquely balances 150 W CW output, 10:1 VSWR tolerance, and TO-270 WB-4 manufacturability-making it optimal for mid-power industrial and medical RF systems requiring proven ruggedness without over-engineering.

Availability

MRF6V2150NBR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, broadcast transmitter drivers, and scientific plasma generation requiring stable component supply and long-term lifecycle support.

Supply support for MRF6V2150NBR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in robust, thermally optimized RF transistors for mission-critical applications.

The MRF6V2150NBR5 belongs to NXP's legacy MRF6V LDMOS family, designed specifically for high-reliability, high-efficiency CW RF amplification in industrial, medical, and scientific equipment operating from 10 MHz to 450 MHz.

FAQ

What is the maximum drain-source voltage rating for the MRF6V2150NBR5?

The MRF6V2150NBR5 has a maximum drain-source voltage (VDSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This 110 V rating enables reliable operation at 50 Vdc supply with substantial headroom for transient voltage spikes and RF envelope overshoot in demanding CW applications.

Does the MRF6V2150NBR5 require external gate protection circuitry?

The MRF6V2150NBR5 integrates ESD protection rated to HBM Class 2, MM Class A, and CDM Class IV, reducing but not eliminating the need for external gate protection. For production systems, a series gate resistor (e.g., 10–100 Ω) and parallel Zener clamp remain recommended to suppress fast transients beyond ESD test conditions.

Can the MRF6V2150NBR5 be used at 450 MHz with full 150 W output?

No-the MRF6V2150NBR5 delivers 150 W CW only at frequencies up to 220 MHz. At 450 MHz, typical output power drops to ~100 W with 22.9 dB gain and 57.6% efficiency. Full-rated 150 W is validated only at 27 MHz and 220 MHz per Freescale's functional test data.

What is the thermal resistance from junction to case for the MRF6V2150NBR5?

The MRF6V2150NBR5 has a thermal resistance RθJC of 0.24°C/W when operated at 150 W CW with case temperature maintained at 80°C. This value assumes proper mounting per AN3263 (bolt-down) or AN1907 (reflow); actual thermal performance depends on heatsink interface quality and airflow.

Is the MRF6V2150NBR5 pin-compatible with the MRF6V2150NR1?

Yes-the MRF6V2150NBR5 and MRF6V2150NR1 share identical TO-270 WB-4 (Case 1486-03) packaging, pinout, and electrical specifications. The 'B' suffix denotes enhanced ESD robustness, and 'R5' indicates 500-unit tape-and-reel packaging versus 'R1' (also 500 units), making them mechanically and electrically interchangeable in existing designs.