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NXP Semiconductors MRF6V2150NR1
- Part No.:
- MRF6V2150NR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-270AB
- Datasheet:
-
MRF6V2150NR1.pdf
- Description:
- RF MOSFET LDMOS 50V TO270-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,094
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Product details
Overview
MRF6V2150NR1 from NXP Semiconductors (formerly Freescale) is a 150 W, 50 V, N-channel enhancement-mode lateral MOSFET RF power transistor designed for CW large-signal output and driver applications up to 450 MHz. It delivers 25 dB power gain, 68.3% drain efficiency, and withstands 10:1 VSWR at 150 W CW - deployed in industrial RF heating, medical diathermy, and scientific plasma generation systems.
For engineers reviewing the MRF6V2150NR1 datasheet, MRF6V2150NR1 pinout, MRF6V2150NR1 application, or MRF6V2150NR1 equivalent, key selection criteria include its 225°C junction rating, TO-272 WB-4 plastic package with exposed source, 110 VDS breakdown, and verified 220 MHz/450 MHz broadband performance under 50 V DC bias and 450 mA quiescent current.
Technical Context
This device operates as a single-ended, unmatched RF power amplifier stage with gate-controlled lateral DMOS architecture. Its series-equivalent large-signal impedance parameters (e.g., Zsource = 0.80 + j3.20 Ω at 450 MHz) are characterized for direct integration into broadband matching networks without internal feedback.
Thermal design centers on low 0.24 °C/W junction-to-case resistance under 150 W CW operation at 80°C case temperature, enabling high-reliability operation when mounted via bolt-down or solder-reflow per AN3263/AN1907. ESD protection meets HBM Class 2, MM Class A, and CDM Class IV standards.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | +110 Vdc - supports 50 V DC supply with 20% headroom for transient voltage spikes in RF amplifier stages. |
| POUT CW | 150 W @ 220 MHz - validated output power level for continuous-wave industrial heating and plasma excitation. |
| Power Gain | 25 dB typical @ 220 MHz - enables single-stage amplification from +10 dBm input to +45 dBm (31.6 W) output before compression. |
| Drain Efficiency | 68.3% @ 220 MHz - reduces thermal load by ~32% vs. 50% efficient devices, lowering heatsink requirements. |
| Junction Temp | 225°C max - allows sustained operation in high-ambient environments such as enclosed RF generator cabinets. |
| VSWR Tolerance | 10:1 @ 50 Vdc, 150 W CW - ensures ruggedness against mismatched loads in unregulated antenna or plasma chamber interfaces. |
| Ciss | 163 pF - determines gate drive impedance and input matching network bandwidth in 27–450 MHz designs. |
Pinout & Package
Package: TO-272 WB-4 (Case 1484-04, Style 1), plastic overmolded with exposed copper backside serving as the source terminal. Mounting surface must be thermally and electrically connected to system ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (RF Input) | High-impedance control terminal requiring DC blocking and impedance-matched microstrip feed; sensitive to ESD. |
| Pin 2 | Drain (RF Output) | High-voltage, high-current RF output node; connects to output matching network and DC supply via RF choke. |
| Pin 3 | Source (Ground Reference) | Internally tied to exposed backside metal; must be low-inductance bonded to PCB ground plane for RF stability and thermal conduction. |
| Pin 4 | Source (Ground Reference) | Duplicate source connection for mechanical robustness and redundant grounding; electrically identical to Pin 3. |
Key Features
| Feature | Design Value |
|---|---|
| 225°C Capable Plastic Package | Enables high-power operation without ceramic packaging cost; qualified for continuous use at rated junction temperature. |
| Integrated ESD Protection | HBM Class 2 / MM Class A / CDM Class IV - eliminates need for external gate protection diodes in production assemblies. |
| Unmatched Broadband Operation | Validated performance across 27–450 MHz with no internal matching; simplifies custom PA design for multi-band industrial systems. |
| 10:1 VSWR Robustness | Guaranteed survival under severe load mismatches - critical for RF plasma and induction heating where load impedance varies dynamically. |
| RoHS Compliant & Tape-and-Reel | R1 suffix denotes 500-unit 44 mm × 13″ reel - supports automated SMT placement in high-volume RF power module manufacturing. |
Applications
| Industrial RF Heating | Medical Diathermy Systems |
|---|---|
Use Scenario: High-power RF energy delivery to heat conductive materials in sealed industrial ovens or conveyor-based drying systems. IC Role / Device Role / Timing Role: Final-stage RF power amplifier driving a 50 Ω resonant cavity or applicator. Use Value: Delivers stable 150 W CW output with 68.3% efficiency, minimizing cooling demands and enabling compact oven chassis design. |
Use Scenario: Therapeutic deep-tissue heating in physiotherapy equipment operating at 27 MHz or 450 MHz ISM bands. IC Role / Device Role / Timing Role: Linear RF power stage generating controlled sinusoidal output for patient-safe energy coupling. Use Value: Maintains 22.9 dB gain and −17.6 dB input return loss at 450 MHz, ensuring predictable power delivery and minimal reflected energy. |
| Scientific Plasma Generation | Broadband RF Driver Amplifier |
Use Scenario: Exciting low-pressure gas plasmas in semiconductor process chambers or material coating reactors. IC Role / Device Role / Timing Role: High-efficiency driver for impedance-matched plasma load with dynamic VSWR shifts. Use Value: Survives 10:1 VSWR events at full 150 W CW, preventing catastrophic failure during plasma ignition and stabilization phases. |
Use Scenario: Wideband signal amplification in test instrumentation, RF signal generators, and EMC immunity testers. IC Role / Device Role / Timing Role: Unmatched broadband gain block covering 27–450 MHz without re-tuning. Use Value: Provides ≥22.9 dB gain across full band with <1.5 dB variation, eliminating need for switched matching networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61K25H | Higher POUT (610 W), higher VDD (65 V), larger TO-270 WB-4 package (Case 1486-03). | Targets >300 W industrial amplifiers; requires larger heatsink and revised gate drive due to higher Ciss (240 pF). | Select when scaling output power beyond 150 W while retaining same frequency range and mounting methodology. |
| PD85015S | Lower POUT (15 W), lower VDD (28 V), SOT-247 package; GaN-on-SiC technology. | Suited for compact 10–100 MHz drivers; lacks 10:1 VSWR rating and 225°C junction capability. | Choose for space-constrained, medium-power designs where thermal margin and ruggedness are secondary to size and efficiency. |
Compared with MRF6V2150NR1, MRFE6VP61K25H offers scalable power but demands layout revision and thermal redesign, while PD85015S trades ruggedness and output for miniaturization and higher-frequency agility - making MRF6V2150NR1 optimal for fixed 150 W, high-reliability 27–450 MHz industrial deployments.
Availability
MRF6V2150NR1 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, and scientific plasma generation requiring stable component supply, long-lifecycle support, and RoHS-compliant tape-and-reel packaging.
Supply support for MRF6V2150NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015, inheriting leadership in high-voltage LDMOS technology for industrial, medical, and scientific RF systems.
The MRF6V2150NR1 belongs to the MRF6V family of broadband RF power transistors engineered specifically for rugged, high-efficiency CW amplification in 10–450 MHz applications where reliability under mismatch and thermal stress is non-negotiable.
FAQ
What is the maximum operating frequency of the MRF6V2150NR1?
The MRF6V2150NR1 is characterized and specified for operation up to 450 MHz, with verified CW performance at 27 MHz, 220 MHz, and 450 MHz. At 450 MHz, it delivers 22.9 dB power gain and 57.6% drain efficiency at 150 W output - confirming its suitability for ISM band applications and broadband RF systems within this range.
Does the MRF6V2150NR1 require external gate protection?
No, the MRF6V2150NR1 integrates ESD protection meeting HBM Class 2, MM Class A, and CDM Class IV standards. External gate protection diodes are not required in standard layouts, though proper PCB layout practices - including short gate traces and local decoupling - remain essential for RF stability and ESD resilience in the MRF6V2150NR1.
What is the recommended mounting method for the MRF6V2150NR1?
Freescale specifies two validated mounting methods for the MRF6V2150NR1: bolt-down per Application Note AN3263 or solder-reflow per AN1907. Both require low-thermal-resistance interface to a grounded heatsink, with attention to flatness, torque (for bolts), or reflow profile (for solder). Incorrect mounting risks exceeding the 225°C junction limit and premature failure of the MRF6V2150NR1.
Can the MRF6V2150NR1 be used in pulsed RF applications?
The MRF6V2150NR1 datasheet specifies only CW performance metrics (e.g., 150 W CW, 68.3% efficiency at 220 MHz). While its 110 VDS rating and thermal design support some pulsed operation, Freescale does not publish pulse-duty-cycle derating curves or safe operating area (SOA) data for non-CW modes. For pulsed RF, consult NXP's application engineering team before deploying the MRF6V2150NR1.
What is the gate threshold voltage range for the MRF6V2150NR1?
The MRF6V2150NR1 has a gate threshold voltage (VGS(th)) range of 1.0 V to 3.0 V, with a typical value of 1.62 V measured at VDS = 10 Vdc and ID = 400 μAdc. Its gate quiescent voltage (VGS(Q)) under operating conditions (VDD = 50 Vdc, IDQ = 450 mA) is 1.5–3.5 Vdc, enabling stable Class AB biasing with low-voltage gate drivers in the MRF6V2150NR1.
MRF6V2150NR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-270AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 220MHz
- Gain:
- 25dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 450 mA
- Power - Output:
- 150W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-270 WB-4
MRF6V2150NR1 FAQ
1.How can I place an order for MRF6V2150NR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6V2150NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6V2150NR1 reliable?
The price and inventory of MRF6V2150NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V2150NR1 is usually 5 days.
3.What payment methods are accepted for MRF6V2150NR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V2150NR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6V2150NR1?
MRF6V2150NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6V2150NR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6V2150NR1?
For technical support, including MRF6V2150NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V2150NR1 requirements.
6.How does Aetrix verify that MRF6V2150NR1 is sourced from the original manufacturer or authorized distributors?
All MRF6V2150NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V2150NR1 meets industry standards.
7.What is the process for return or replacement of MRF6V2150NR1?
All MRF6V2150NR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V2150NR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6V2150NR1 part is unused and in its original packaging.
Return procedure for MRF6V2150NR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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