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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6V2300NBR1

Name: MRF6V2300NBR1
Brand: NXP Semiconductors
SKU: MRF6V2300NBR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6V2300NBR1

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-272BB

Datasheet:: MRF6V2300NBR1.pdf

Description:: RF MOSFET LDMOS 50V TO272-4

Quantity:: RFQ Add To RFQ list

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Inventory:5,952

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Product details

Overview

MRF6V2300NBR1 from Freescale Semiconductor is a 300 W, 50 V, N-channel enhancement-mode lateral MOSFET RF power transistor designed for CW large-signal output and driver applications up to 600 MHz. It delivers 25.5 dB power gain and 68% drain efficiency at 220 MHz under 50 Vdc, 900 mA bias, and is rated for 225°C junction operation in a TO-270 WB-4 plastic package.

For engineers reviewing the MRF6V2300NBR1 datasheet, MRF6V2300NBR1 pinout, MRF6V2300NBR1 application, or MRF6V2300NBR1 equivalent, key selection criteria include VSWR ruggedness (10:1 @ 300 W), integrated ESD protection (HBM Class 2), thermal resistance (0.24°C/W), gate threshold voltage (1.63 V typ), and series-equivalent impedance characterization for broadband matching.

Technical Context

This device operates as a single-ended, unmatched RF power amplifier stage with lateral LDMOS architecture optimized for industrial, medical, and scientific CW amplification. Its design supports stable operation under high VSWR conditions and integrates ESD protection per JESD22-A114 (Class 2), JESD22-A115 (Class A), and JESD22-C101 (Class IV).

The MRF6V2300NBR1 is characterized using series-equivalent large-signal impedance parameters at 27 MHz, 220 MHz, and 450 MHz, enabling precise input/output matching network design. Thermal performance is validated with R_θJC = 0.24°C/W at 300 W CW and case temperature of 83°C, supporting high-reliability deployment in air- or liquid-cooled systems.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	10–600 MHz - Supports VHF/UHF broadband amplification without retuning across broadcast, ISM, and medical RF bands.
Output Power (CW)	300 W @ 220 MHz - Delivers full-rated RF output under continuous-wave conditions with 50 Vdc supply and 900 mA quiescent current.
Power Gain	25.5 dB @ 220 MHz - Enables high-efficiency signal boosting with minimal driver-stage complexity in multi-stage PA designs.
Drain Efficiency	68% @ 220 MHz - Reduces heat dissipation and DC power consumption, easing thermal management in high-power enclosures.
VSWR Tolerance	10:1 @ 50 Vdc, 220 MHz, 300 W - Ensures robust operation into mismatched loads without device failure, critical for antenna-coupled systems.
Junction Temperature	225°C max - Allows sustained operation at elevated temperatures, extending reliability margin in thermally constrained environments.
Thermal Resistance	0.24°C/W (Junction-to-Case) - Enables accurate heatsink sizing and thermal modeling for industrial-grade cooling solutions.
ESD Protection	HBM Class 2, MM Class A, CDM Class IV - Provides built-in handling robustness during assembly and field service without external protection circuitry.

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic overmolded package with exposed backside source terminal. Rated for 225°C operation and RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control electrode; requires stable DC bias (1.5–3.5 V_Q) and RF input matching network for optimal gain and linearity.
Pin 2	Drain	High-power RF output node; connects to output matching network and DC supply via RF choke; electrically isolated from case.
Pin 3	Source	Common reference node; electrically tied to exposed backside metal; must be low-inductance grounded for stability and thermal conduction.
Pin 4	Source	Secondary source connection; paralleled with Pin 3 to reduce source inductance and improve thermal path to heatsink.

Key Features

Feature	Design Value
Unmatched broadband operation	Validated performance from 10–600 MHz enables flexible system-level matching without internal resonators or tuning elements.
Series-equivalent impedance data	Published Z_source and Z_load values at 27/220/450 MHz simplify matching network synthesis and reduce prototyping iterations.
50 V_DD maximum rating	Supports high-voltage RF amplifier architectures while maintaining safe operating area margins up to 110 V_DSS.
Integrated ESD protection	Eliminates need for external gate-protection diodes in production assemblies, reducing BOM count and layout area.
Tape-and-reel packaging	R1 suffix denotes 500-unit reel (44 mm, 13″), enabling automated SMT placement for high-volume manufacturing.

Applications

VHF Broadcast Transmitters	ISM Band RF Heating Systems
Use Scenario: High-power AM/FM broadcast amplifiers operating at 220 MHz with stringent linearity and reliability requirements. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 300 W CW output with 25.5 dB gain and 68% efficiency. Use Value: 10:1 VSWR ruggedness ensures uninterrupted transmission during antenna detuning or environmental impedance shifts.	Use Scenario: Industrial RF heating generators for plastic welding, food processing, and semiconductor plasma etching at 27–450 MHz. IC Role / Device Role / Timing Role: High-efficiency power stage converting DC to controlled RF energy for material excitation. Use Value: 225°C junction rating and 0.24°C/W thermal resistance support continuous-duty operation in sealed, convection-limited enclosures.
Medical Diathermy Equipment	Scientific Particle Accelerator Drivers
Use Scenario: Therapeutic RF energy delivery systems requiring precise power control and fail-safe thermal behavior. IC Role / Device Role / Timing Role: Linearized CW amplifier stage generating calibrated 27 MHz or 450 MHz output for tissue heating. Use Value: Characterized series-equivalent impedances at multiple frequencies enable repeatable, calibration-grade matching network implementation.	Use Scenario: Pulsed and CW RF drivers for klystron or solid-state accelerator cavities demanding high peak power and long MTTF. IC Role / Device Role / Timing Role: High-reliability power transistor operating at 50 Vdc with documented electromigration lifetime models. Use Value: Freescale's published MTTF calculator and AN1955 thermal methodology support traceable lifetime prediction for mission-critical infrastructure.

VHF Broadcast Transmitters

ISM Band RF Heating Systems

Use Scenario: High-power AM/FM broadcast amplifiers operating at 220 MHz with stringent linearity and reliability requirements.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 300 W CW output with 25.5 dB gain and 68% efficiency.

Use Value: 10:1 VSWR ruggedness ensures uninterrupted transmission during antenna detuning or environmental impedance shifts.

Use Scenario: Industrial RF heating generators for plastic welding, food processing, and semiconductor plasma etching at 27–450 MHz.

IC Role / Device Role / Timing Role: High-efficiency power stage converting DC to controlled RF energy for material excitation.

Use Value: 225°C junction rating and 0.24°C/W thermal resistance support continuous-duty operation in sealed, convection-limited enclosures.

Medical Diathermy Equipment

Scientific Particle Accelerator Drivers

Use Scenario: Therapeutic RF energy delivery systems requiring precise power control and fail-safe thermal behavior.

IC Role / Device Role / Timing Role: Linearized CW amplifier stage generating calibrated 27 MHz or 450 MHz output for tissue heating.

Use Value: Characterized series-equivalent impedances at multiple frequencies enable repeatable, calibration-grade matching network implementation.

Use Scenario: Pulsed and CW RF drivers for klystron or solid-state accelerator cavities demanding high peak power and long MTTF.

IC Role / Device Role / Timing Role: High-reliability power transistor operating at 50 Vdc with documented electromigration lifetime models.

Use Value: Freescale's published MTTF calculator and AN1955 thermal methodology support traceable lifetime prediction for mission-critical infrastructure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6V2300NR1	Same die, TO-272 WB-4 package (Case 1484-04); slightly higher R_θJC due to different leadframe geometry.	Preferred where bolt-down mounting per AN3263 is used; identical electrical specs but distinct mechanical footprint.	Select MRF6V2300NR1 when legacy board layouts or mechanical constraints require TO-272 form factor.
MRFE6VP6300HR5	Higher P_out (600 W), 66 V rating, improved gain flatness; requires updated gate bias and thermal interface design.	Suitable for next-generation systems scaling beyond 300 W; not drop-in due to different pinout and bias requirements.	Choose MRFE6VP6300HR5 only when upgrading output power and accepting redesign effort for enhanced performance.

Compared with MRF6V2300NBR1, MRF6V2300NR1 offers identical RF performance in a mechanically distinct TO-272 package, while MRFE6VP6300HR5 provides double the output power at the cost of increased complexity and non-interchangeable layout.

Availability

MRF6V2300NBR1 is available at Aetrix Electronics and suitable for VHF broadcast transmitters, industrial RF heating systems, medical diathermy equipment, and scientific particle accelerator drivers requiring stable component supply and long-term manufacturability.

Supply support for MRF6V2300NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-voltage LDMOS technology for industrial, medical, and broadcast applications.

The MRF6V2300NBR1 belongs to Freescale's MRF6V series of high-power lateral MOSFETs, engineered specifically for rugged, high-efficiency CW amplification in demanding RF energy applications.

FAQ

What is the maximum drain-source voltage rating for the MRF6V2300NBR1?

The MRF6V2300NBR1 has a maximum drain-source voltage (V_DSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This 110 V rating supports operation at 50 Vdc supply with substantial headroom for transient voltage spikes and switching-induced overshoot in RF amplifier stages.

Does the MRF6V2300NBR1 require external ESD protection?

No, the MRF6V2300NBR1 integrates on-die ESD protection meeting HBM Class 2, MM Class A, and CDM Class IV standards. External gate protection diodes are unnecessary in properly designed PCB layouts, simplifying system-level ESD compliance.

What thermal interface materials are recommended for the MRF6V2300NBR1?

Freescale Application Note AN3263 recommends thermally conductive greases or phase-change pads with ≤0.1°C·in²/W thermal resistance for bolt-down mounting. For solder-reflow attachment, AN1907 specifies lead-free solder paste and controlled reflow profiles to maintain 225°C junction capability.

Can the MRF6V2300NBR1 be used at 450 MHz with full 300 W output?

Yes - the MRF6V2300NBR1 delivers 300 W CW at 450 MHz with 21.7 dB gain and 59.1% drain efficiency, as verified in Freescale's test fixture. Matching networks must be redesigned per the published Z_source = 0.50 + j1.37 Ω and Z_load = 1.25 + j0.99 Ω at that frequency.

Is the MRF6V2300NBR1 pin-compatible with the MRF6V2300NR1?

No - although both share identical die and electrical specifications, the MRF6V2300NBR1 uses TO-270 WB-4 (Case 1486-03) while the MRF6V2300NR1 uses TO-272 WB-4 (Case 1484-04). Their mechanical footprints differ, requiring separate PCB layouts and mounting hardware.

MRF6V2300NBR1 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-272BB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 220MHz

Gain:: 25.5dB

Voltage - Test:: 50 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 900 mA

Power - Output:: 300W

Voltage - Rated:: 110 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: TO-272 WB-4

MRF6V2300NBR1 FAQ

1.How can I place an order for MRF6V2300NBR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6V2300NBR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6V2300NBR1 reliable?

The price and inventory of MRF6V2300NBR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V2300NBR1 is usually 5 days.

3.What payment methods are accepted for MRF6V2300NBR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V2300NBR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6V2300NBR1?

MRF6V2300NBR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6V2300NBR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6V2300NBR1?

For technical support, including MRF6V2300NBR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V2300NBR1 requirements.

6.How does Aetrix verify that MRF6V2300NBR1 is sourced from the original manufacturer or authorized distributors?

All MRF6V2300NBR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V2300NBR1 meets industry standards.

7.What is the process for return or replacement of MRF6V2300NBR1?

All MRF6V2300NBR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V2300NBR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6V2300NBR1 part is unused and in its original packaging.

Return procedure for MRF6V2300NBR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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