NXP Semiconductors MRF6V2300NBR5

Overview

MRF6V2300NBR5 from NXP Semiconductors (formerly Freescale) is a 300 W, 50 V, lateral N-channel RF power MOSFET optimized for broadband CW amplifier stages in industrial, scientific, and medical (ISM) transmitters operating up to 600 MHz. It delivers 25.5 dB power gain and 68% drain efficiency at 220 MHz under 50 Vdc, 900 mA bias, with 10:1 VSWR ruggedness and integrated ESD protection.

For engineers reviewing the MRF6V2300NBR5 datasheet, MRF6V2300NBR5 pinout, MRF6V2300NBR5 application, or MRF6V2300NBR5 equivalent, this page provides verified electrical specifications, thermal metrics, package geometry, impedance matching data, and real-world test-circuit validation across 27–450 MHz bands - critical for high-reliability RF power amplifier design and thermal management planning.

Technical Context

This device is an unmatched, enhancement-mode LDMOS transistor with series-equivalent large-signal impedance characterization at 27 MHz, 220 MHz, and 450 MHz. Its gate threshold voltage (1.63 V typ) and quiescent gate voltage (2.6 V typ at 900 mA IDQ) support stable Class AB operation, while its 0.24 °C/W junction-to-case thermal resistance enables high-power dissipation when mounted per AN1907 or AN3263 guidelines.

Designed for single-ended broadband configurations, the MRF6V2300NBR5 features 225°C-rated plastic packaging (TO-270 WB-4), qualified for 50 VDD operation, and characterized with Ciss = 268 pF, Coss = 120 pF, Crss = 2.88 pF at 50 VDS - enabling predictable input/output matching network synthesis using Freescale's published Zsource/Zload data.

Key Specifications

Pinout & Package

Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic overmolded, exposed source on backside. Dimensions per Freescale drawing 1486-03 Issue D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6V2300NBR5, the MRF6V2300NR1 offers identical RF performance but slightly reduced thermal conductivity due to TO-272 packaging, while the MRFE6VP6300HR5 extends power capability at the cost of greater gate charge and narrower optimal bandwidth - making MRF6V2300NBR5 the balanced choice for 300 W, 27–450 MHz ISM and broadcast applications requiring proven ruggedness and thermal efficiency.

Availability

MRF6V2300NBR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, VHF broadcast transmitters, and scientific instrumentation requiring stable component supply and long-term lifecycle continuity.

Supply support for MRF6V2300NBR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this LDMOS product line for high-reliability RF applications.

The MRF6V2300NBR5 belongs to NXP's high-power LDMOS portfolio designed specifically for broadband industrial, scientific, and medical RF amplifiers demanding ruggedness, thermal stability, and repeatable large-signal performance from 27 MHz to 600 MHz.

FAQ

What is the maximum continuous drain voltage rating for the MRF6V2300NBR5?

The MRF6V2300NBR5 has a maximum drain-source voltage (VDSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This 110 V rating supports safe operation under transient overvoltage conditions common in RF amplifier switching and mismatch scenarios, and aligns with Freescale's qualification for up to 50 VDD continuous operation - meaning the device is rated for 50 V DC supply rails with margin for peak voltage excursions.

Does the MRF6V2300NBR5 require external gate protection diodes?

No, the MRF6V2300NBR5 integrates on-die ESD protection meeting HBM Class 2, MM Class A, and CDM Class IV standards. Freescale's documentation confirms that external gate protection is not required in properly designed PCB layouts, provided handling and assembly follow JESD22-A114/A115/C101-compliant practices - a key reliability advantage over earlier-generation RF MOSFETs.

What is the recommended mounting method for thermal reliability of the MRF6V2300NBR5?

Freescale specifies two validated mounting methods for the MRF6V2300NBR5: solder reflow per AN1907 (for SMT-compatible heatsinks) and bolt-down per AN3263 (for high-power chassis-mount applications). Both require thermal interface material with ≤0.15 °C·in²/W resistance and flatness ≤0.001″ to ensure the 0.24 °C/W RθJC rating is achieved - improper mounting risks exceeding the 225°C junction limit even at rated 300 W CW output.

Can the MRF6V2300NBR5 be used at 450 MHz with full 300 W output?

Yes - Freescale's datasheet validates 300 W CW output at 450 MHz with 21.7 dB power gain and 59.1% drain efficiency under 50 VDD, 900 mA IDQ conditions. Matching networks must be tuned to the published Zsource = 0.50 + j1.37 Ω and Zload = 1.25 + j0.99 Ω at 450 MHz, and thermal management must account for reduced efficiency versus 220 MHz operation.

What is the gate threshold voltage range for the MRF6V2300NBR5?

The MRF6V2300NBR5 has a gate threshold voltage (VGS(th)) range of 1.0 V to 3.0 V, with a typical value of 1.63 V measured at VDS = 10 Vdc and ID = 800 μAdc. This low-threshold characteristic enables efficient Class AB biasing using simple resistive-divider or active current-source gate networks, and contributes to stable quiescent current control across temperature.