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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6V2300NR1

Name: MRF6V2300NR1
Brand: NXP Semiconductors
SKU: MRF6V2300NR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6V2300NR1

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-270AB

Datasheet:: MRF6V2300NR1.pdf

Description:: RF MOSFET LDMOS 50V TO270-4

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF6V2300NR1 from Freescale Semiconductor is a 300 W, 50 V, N-channel enhancement-mode lateral MOSFET RF power transistor designed for CW large-signal output and driver applications up to 600 MHz. It delivers 25.5 dB power gain and 68% drain efficiency at 220 MHz under 50 Vdc, 900 mA bias, and is qualified for industrial, medical, and scientific RF amplifiers.

For engineers reviewing the MRF6V2300NR1 datasheet, MRF6V2300NR1 pinout, MRF6V2300NR1 application, or MRF6V2300NR1 equivalent, key selection criteria include its 225°C junction rating, 0.24°C/W thermal resistance, 10:1 VSWR ruggedness at 300 W, TO-272 WB-4 plastic package, and series-equivalent impedance characterization at 27/220/450 MHz.

Technical Context

This device operates as an unmatched broadband RF power amplifier stage in single-ended configurations. Its lateral LDMOS architecture supports high-voltage operation (up to +110 V_DS) and integrates ESD protection per HBM Class 2, MM Class A, and CDM Class IV standards.

The MRF6V2300NR1 is characterized with series-equivalent large-signal impedance parameters (e.g., Z_source = 1.23 + j3.69 Ω, Z_load = 2.43 + j2.04 Ω at 220 MHz), enabling precise matching network design. It requires external input/output matching networks and is validated for bolt-down or solder-reflow mounting per AN3263 and AN1907.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	10–600 MHz - Supports VHF broadcast, ISM, and industrial heating systems without retuning.
Output Power (CW)	300 W @ 220 MHz - Delivers full rated power in standard test fixtures with 50 Vdc supply and 900 mA quiescent current.
Power Gain	25.5 dB @ 220 MHz - Enables high-efficiency two-stage amplifier designs with minimal driver-stage complexity.
Drain Efficiency	68% @ 220 MHz - Reduces thermal load and heatsink requirements compared to lower-efficiency alternatives.
Junction Temperature	225°C max - Allows sustained operation in high-ambient environments when mounted per AN3263/AN1907 guidelines.
Thermal Resistance	0.24°C/W (Junction-to-Case) - Dictates minimum heatsink thermal resistance required to maintain T_C ≤ 150°C at 300 W.
VSWR Ruggedness	10:1 @ 50 Vdc, 220 MHz, 300 W CW - Survives mismatched loads without degradation, critical for antenna-coupled transmitters.

Pinout & Package

Package: TO-272 WB-4 (Case 1484-04, Style 1), plastic overmolded, exposed backside source terminal, RoHS compliant, supplied in tape-and-reel (500 units/reel).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (RF Input)	High-impedance control terminal; requires DC blocking and impedance-matching network for stable RF drive.
Pin 2	Drain (RF Output)	High-power RF output node; connects to output matching network and DC supply via RF choke.
Pin 3	Source (Ground Reference)	Internally connected to exposed metal backside; must be low-inductance soldered or bolted to heatsink/chassis ground.
Pin 4	No Connect / Thermal Pad	Non-electrical; mechanical tie point for thermal management-must be thermally coupled to heatsink but electrically isolated from circuit ground.

Key Features

Feature	Design Value
225°C Junction Rating	Enables operation in high-temperature enclosures (e.g., sealed RF cabinets) without derating below 300 W CW.
Integrated ESD Protection	HBM Class 2, MM Class A, CDM Class IV - Eliminates need for external ESD diodes in production PCBs.
Characterized Impedance Data	Series-equivalent Z_source/Z_load provided at 27/220/450 MHz - Accelerates matching network synthesis and reduces prototyping iterations.
10:1 VSWR Capability	Withstands severe load mismatches at full power - essential for broadcast transmitters with variable antenna impedance.
Qualified for 50 V_DD	Supports standard high-efficiency RF power supply rails without voltage derating or external clamping circuits.

Applications

VHF Broadcast Transmitter	Industrial RF Heating
Use Scenario: Final-stage amplifier in 174–230 MHz FM broadcast exciter delivering 300 W into 50 Ω load with <−30 dBc IMD3. IC Role / Device Role / Timing Role: Unmatched RF power transistor operating in Class AB, driven by pre-driver stage with 50 Vdc supply and gate bias control. Use Value: 68% drain efficiency minimizes cooling requirements in air-cooled transmitter cabinets; 10:1 VSWR ruggedness ensures reliability during antenna tuning or fault conditions.	Use Scenario: Core amplifier in 27.12 MHz or 40.68 MHz RF induction heater for plastic welding or semiconductor processing. IC Role / Device Role / Timing Role: High-current, high-voltage switching element in resonant half-bridge topology, biased at 900 mA quiescent current. Use Value: 225°C junction rating allows continuous operation inside sealed heating chamber enclosures; characterized Z_load = 1.25 + j0.99 Ω at 450 MHz enables precise tank circuit tuning.
Medical Diathermy System	Scientific Plasma Generation
Use Scenario: RF energy source in 27.12 MHz therapeutic diathermy unit delivering controlled 300 W CW to patient applicator. IC Role / Device Role / Timing Role: Final RF power stage with active bias control and temperature monitoring, operating under strict safety compliance (IEC 60601-2-2). Use Value: Integrated ESD protection prevents field failures during handling; 0.24°C/W R_θJC enables compact heatsink design meeting portable system size constraints.	Use Scenario: Driver for magnetron or solid-state plasma source in 450 MHz laboratory plasma chamber used for thin-film deposition. IC Role / Device Role / Timing Role: Broadband matched amplifier providing stable 300 W CW output across frequency sweep, with gate bias adjusted for constant P_out. Use Value: Verified performance at 450 MHz (21.7 dB gain, 59.1% efficiency) eliminates need for frequency-specific redesign; TO-272 package supports high-reliability hermetic sealing.

VHF Broadcast Transmitter

Industrial RF Heating

Use Scenario: Final-stage amplifier in 174–230 MHz FM broadcast exciter delivering 300 W into 50 Ω load with <−30 dBc IMD3.

IC Role / Device Role / Timing Role: Unmatched RF power transistor operating in Class AB, driven by pre-driver stage with 50 Vdc supply and gate bias control.

Use Value: 68% drain efficiency minimizes cooling requirements in air-cooled transmitter cabinets; 10:1 VSWR ruggedness ensures reliability during antenna tuning or fault conditions.

Use Scenario: Core amplifier in 27.12 MHz or 40.68 MHz RF induction heater for plastic welding or semiconductor processing.

IC Role / Device Role / Timing Role: High-current, high-voltage switching element in resonant half-bridge topology, biased at 900 mA quiescent current.

Use Value: 225°C junction rating allows continuous operation inside sealed heating chamber enclosures; characterized Z_load = 1.25 + j0.99 Ω at 450 MHz enables precise tank circuit tuning.

Medical Diathermy System

Scientific Plasma Generation

Use Scenario: RF energy source in 27.12 MHz therapeutic diathermy unit delivering controlled 300 W CW to patient applicator.

IC Role / Device Role / Timing Role: Final RF power stage with active bias control and temperature monitoring, operating under strict safety compliance (IEC 60601-2-2).

Use Value: Integrated ESD protection prevents field failures during handling; 0.24°C/W R_θJC enables compact heatsink design meeting portable system size constraints.

Use Scenario: Driver for magnetron or solid-state plasma source in 450 MHz laboratory plasma chamber used for thin-film deposition.

IC Role / Device Role / Timing Role: Broadband matched amplifier providing stable 300 W CW output across frequency sweep, with gate bias adjusted for constant P_out.

Use Value: Verified performance at 450 MHz (21.7 dB gain, 59.1% efficiency) eliminates need for frequency-specific redesign; TO-272 package supports high-reliability hermetic sealing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NXP MRFE6VP6300HR5	Higher P_out (600 W), GaN-on-SiC, 50 V, 1.8–2.2 GHz range - not suitable below 100 MHz.	Targeted at UHF cellular base stations; lacks 27/220/450 MHz impedance data and VSWR validation below 100 MHz.	Select only for new UHF designs requiring >300 W; not drop-in for MRF6V2300NR1's VHF/ISM bands.
STMicroelectronics PD85003	LDMOS, 300 W, 50 V, 10–500 MHz, but rated only to 200°C junction and 0.32°C/W R_θJC.	Validated for industrial heating at 27.12 MHz and 40.68 MHz, but no 220 MHz or 450 MHz impedance specs published.	Acceptable where ambient temperature is <85°C and heatsink capacity exceeds MRF6V2300NR1 requirements; verify VSWR tolerance separately.

Compared with the MRF6V2300NR1, the MRFE6VP6300HR5 offers higher frequency capability but lacks VHF support and ruggedness validation, while the PD85003 matches power and frequency coverage but trades junction temperature margin and thermal performance for cost - making MRF6V2300NR1 optimal for demanding 27–450 MHz industrial/medical systems.

Availability

MRF6V2300NR1 is available at Aetrix Electronics and suitable for VHF broadcast transmitters, industrial RF heating systems, medical diathermy equipment, and scientific plasma generators requiring stable component supply and long-lifecycle support.

Supply support for MRF6V2300NR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability transistors for mission-critical industrial and communications infrastructure.

The MRF6V2300NR1 belongs to Freescale's MRF6V family of lateral N-channel MOSFETs, engineered specifically for robust, high-efficiency CW RF amplification in industrial, medical, and scientific equipment operating from 10 MHz to 600 MHz.

FAQ

What is the maximum drain-source voltage rating for the MRF6V2300NR1?

The MRF6V2300NR1 has a maximum drain-source voltage (V_DSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This rating is confirmed in Table 1 (Maximum Ratings) of the official Freescale datasheet Rev. 5, and applies under all operating conditions including transient events. Exceeding +110 Vdc risks permanent breakdown of the MRF6V2300NR1 die structure.

Does the MRF6V2300NR1 require external gate protection diodes?

No, the MRF6V2300NR1 incorporates integrated ESD protection qualified to HBM Class 2, MM Class A, and CDM Class IV per JESD22-A114/A115/C101. External gate protection diodes are unnecessary in properly designed circuits, though proper RF layout practices (short traces, ground plane integrity) remain essential to preserve the MRF6V2300NR1's built-in protection efficacy.

Can the MRF6V2300NR1 be used at 450 MHz with full 300 W output power?

Yes - the MRF6V2300NR1 is characterized and validated for 300 W CW operation at 450 MHz in Freescale's reference test circuit (Table 8, Figure 17). At this frequency, it delivers 21.7 dB power gain and 59.1% drain efficiency. Full power requires adherence to the specified matching network (Z_source = 0.50 + j1.37 Ω, Z_load = 1.25 + j0.99 Ω) and thermal management per AN1907 or AN3263.

What is the thermal resistance from junction to case for the MRF6V2300NR1?

The thermal resistance from junction to case (R_θJC) for the MRF6V2300NR1 is 0.24°C/W, measured at case temperature 83°C under 300 W CW operation (Table 2). This value is critical for heatsink sizing: to maintain T_C ≤ 150°C, the total heatsink-to-ambient resistance must be ≤ (225°C − 150°C)/300 W = 0.25°C/W, leaving minimal margin for interface resistance.

Is the MRF6V2300NR1 pin-compatible with the MRF6V2300NBR1 variant?

Yes - both MRF6V2300NR1 and MRF6V2300NBR1 share identical pinout (TO-272 WB-4, Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Thermal Pad) and package outline (Case 1484-04), as confirmed in Figure 1 and revision history notes. The suffix difference denotes reel packaging (R1 = 500 units) versus bulk (NBR1), not functional or mechanical variation. The MRF6V2300NR1 may be substituted for MRF6V2300NBR1 in existing layouts without modification.

MRF6V2300NR1 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-270AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 220MHz

Gain:: 25.5dB

Voltage - Test:: 50 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 900 mA

Power - Output:: 300W

Voltage - Rated:: 110 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-270 WB-4

MRF6V2300NR1 FAQ

1.How can I place an order for MRF6V2300NR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6V2300NR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6V2300NR1 reliable?

The price and inventory of MRF6V2300NR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V2300NR1 is usually 5 days.

3.What payment methods are accepted for MRF6V2300NR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V2300NR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6V2300NR1?

MRF6V2300NR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6V2300NR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6V2300NR1?

For technical support, including MRF6V2300NR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V2300NR1 requirements.

6.How does Aetrix verify that MRF6V2300NR1 is sourced from the original manufacturer or authorized distributors?

All MRF6V2300NR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V2300NR1 meets industry standards.

7.What is the process for return or replacement of MRF6V2300NR1?

All MRF6V2300NR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V2300NR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6V2300NR1 part is unused and in its original packaging.

Return procedure for MRF6V2300NR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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