NXP Semiconductors MRF6V2300NR5

Overview

MRF6V2300NR5 from NXP Semiconductors (formerly Freescale) is a 300 W, 50 V, N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband CW large-signal output and driver stages in industrial, medical, and scientific RF amplifiers operating up to 600 MHz. Key confirmed specs include 25.5 dB power gain, 68% drain efficiency at 220 MHz, 110 V_DS rating, 225°C maximum junction temperature, and capability to withstand 10:1 VSWR at 300 W CW.

For engineers reviewing the MRF6V2300NR5 datasheet, MRF6V2300NR5 pinout, MRF6V2300NR5 application, or MRF6V2300NR5 equivalent, this page delivers verified electrical parameters, thermal characteristics, package geometry, impedance matching data, ESD protection class ratings, and real-world test-circuit validation across 27–450 MHz bands - all critical for high-reliability RF PA design and thermal management planning.

Technical Context

This device operates as an unmatched single-ended RF power amplifier stage with gate-controlled lateral LDMOS architecture optimized for fixed-bias Class AB operation. It features integrated ESD protection (HBM Class 2, MM Class A, CDM Class IV), series-equivalent large-signal impedance characterization (e.g., Z_source = 1.23 + j3.69 Ω at 220 MHz), and validated performance across three discrete frequency bands: 27 MHz, 220 MHz, and 450 MHz.

Thermal design is governed by R_θJC = 0.24°C/W under 300 W CW at T_C = 83°C, requiring robust heatsinking. The device is qualified for continuous operation at V_DD up to 50 Vdc and supports stable operation into 10:1 VSWR loads without failure - a key requirement for broadcast and plasma generation systems where load mismatch is common.

Key Specifications

Pinout & Package

Package: TO-272 WB-4 (Case 1484-04, Style 1), plastic overmolded, exposed source pad on backside. Dimensions per Freescale drawing 1484-04 Issue E. Moisture Sensitivity Level (MSL) 3 per J-STD-020 (peak reflow 260°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP6300HR5 and CGHV14800F, the MRF6V2300NR5 offers optimal cost-performance balance for proven VHF industrial and broadcast systems below 450 MHz, with mature thermal models, documented matching networks, and established field reliability - making it the preferred choice for retrofit, maintenance, and volume production where design change risk must be minimized.

Availability

MRF6V2300NR5 is available at Aetrix Electronics and suitable for VHF broadcast transmitters, industrial plasma generators, medical diathermy systems, and scientific RF sources requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for MRF6V2300NR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and manufacturing continuity for the MRF6V series.

The MRF6V2300NR5 belongs to NXP's legacy LDMOS RF power transistor family, engineered specifically for high-reliability, high-efficiency CW amplification in industrial, medical, and scientific equipment operating from 10 MHz to 600 MHz.

FAQ

What is the maximum continuous drain current rating for the MRF6V2300NR5?

The MRF6V2300NR5 does not specify a maximum continuous drain current (I_D) as a standalone rating. Instead, its safe operating area is defined by the DC Safe Operating Area curve (Figure 5), which shows that at V_DS = 50 V, the device supports up to ~13.5 A pulsed, but for 300 W CW operation, the recommended I_DQ is 900 mA. Continuous operation beyond this quiescent point must respect the 225°C junction limit and thermal resistance of 0.24°C/W - meaning actual I_D depends on heatsink performance and ambient conditions. The MRF6V2300NR5 is intended for Class AB linear amplification, not switching applications.

Can the MRF6V2300NR5 be used in push-pull configuration?

No - the MRF6V2300NR5 is explicitly designed and characterized as a single-ended device. Freescale's documentation states "PARTS ARE SINGLE-ENDED" and provides only series-equivalent source/load impedances for unilateral operation. Push-pull use would require symmetrical devices with matched gain, phase, and thermal behavior - which is not guaranteed for the MRF6V2300NR5. Its pinout (two source pins, one gate, one drain) and test circuits (Figures 2, 16, 17) confirm single-ended topology. For push-pull, consider dual-die packages like MRF6V2300NBR1 or purpose-built balanced RF transistors.

What is the gate threshold voltage range for the MRF6V2300NR5?

The MRF6V2300NR5 has a gate threshold voltage (V_GS(th)) range of 1.0 V to 3.0 V, measured at V_DS = 10 V and I_D = 800 μA. This low-threshold characteristic enables simple fixed-bias or active-bias gate drive circuits. The typical value is 1.63 V, and the gate quiescent voltage (V_GS(Q)) under 50 V_DD/900 mA I_DQ conditions is 2.6 V (min 1.5 V, max 3.5 V). These values are critical for setting stable Class AB bias points and avoiding thermal runaway.

Does the MRF6V2300NR5 require external gate protection diodes?

No - the MRF6V2300NR5 integrates ESD protection meeting HBM Class 2 (≥2 kV), MM Class A (≥200 V), and CDM Class IV (≥1 kV) standards. Freescale's datasheet confirms "Integrated ESD Protection" as a core feature, and no external gate protection diodes are specified or recommended in any test circuit (Figures 2, 16, 17). However, proper RF layout practices - including short gate traces, local bypassing, and controlled-impedance input lines - remain essential to prevent RF-induced gate damage during operation.

What is the recommended mounting method for the MRF6V2300NR5?

Freescale specifies two validated mounting methods for the MRF6V2300NR5: bolt-down (per Application Note AN3263) and solder reflow (per AN1907). Bolt-down is preferred for highest thermal reliability in high-power continuous operation, using 2–3 N·m torque on M3 screws to a flat, nickel-plated heatsink. Reflow mounting requires strict profile control (peak 260°C, MSL3 compliance) and is suitable for automated assembly. In both cases, the exposed source pad (backside) must make full-area contact - voids or insufficient solder paste cause localized overheating and premature failure. The MRF6V2300NR5 must never be mounted with adhesive-only or clip-based solutions.