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NXP Semiconductors MRF6V4300NBR5
- Part No.:
- MRF6V4300NBR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-272BB
- Datasheet:
-
MRF6V4300NBR5.pdf
- Description:
- RF MOSFET LDMOS 50V TO272-4
- Quantity:
- Payment:
- Shipping:
Inventory:4,756
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Product details
Overview
MRF6V4300NBR5 from NXP Semiconductors (formerly Freescale) is a 300 W, 50 V, lateral N-channel RF power MOSFET designed for broadband CW and pulsed amplifier stages in industrial, scientific, and medical (ISM) transmitters operating up to 600 MHz. It delivers 22 dB power gain and 60% drain efficiency at 450 MHz with 50 Vdc supply and 900 mA quiescent drain current, and is rated for 10:1 VSWR tolerance under full 300 W CW output.
For engineers reviewing the MRF6V4300NBR5 datasheet, MRF6V4300NBR5 pinout, MRF6V4300NBR5 application, or MRF6V4300NBR5 equivalent, key selection criteria include its 225°C junction rating, 0.24°C/W thermal resistance (junction-to-case), integrated ESD protection (HBM Class 1C), TO-270 WB-4 plastic package, and series-equivalent large-signal impedance characterization for matching network design.
Technical Context
This device operates as an unmatched, single-ended RF power amplifier stage in Class AB or Class C configurations. Its lateral MOSFET architecture supports high-voltage operation (up to +110 VDS) and wide negative gate-source voltage range (–6.0 VGS) for robust overdrive and stability in demanding RF driver applications.
Thermally, it is engineered for bolt-down or solder-reflow mounting per AN3263/AN1907, with a 150°C case temperature limit and 225°C maximum junction temperature. Its large-signal impedance parameters (Zsource = 0.39 + j1.26 Ω, Zload = 1.27 + j0.96 Ω at 450 MHz) are fully characterized for 50 Ω system integration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power (CW) | 300 W at 450 MHz, enabling high-power ISM band amplifiers without derating |
| Power Gain | 22 dB typical - reduces required driver stage complexity and cascaded gain stages |
| Drain Efficiency | 60% at Pout = 300 W - lowers thermal load and DC power supply requirements |
| Junction Temperature | 225°C max - supports sustained high-power operation with appropriate heatsinking |
| Thermal Resistance | 0.24°C/W (RθJC) - enables precise junction temperature estimation for MTTF prediction |
| VSWR Tolerance | 10:1 at 450 MHz, 50 V, 300 W CW - ensures ruggedness against load mismatch in industrial RF systems |
| Gate Threshold Voltage | 1.65 V typical (0.9–2.4 V range) - allows stable biasing with low-voltage control circuitry |
Pinout & Package
Package: TO-270 WB-4, plastic overmolded package with exposed source pad on backside; 4-terminal configuration optimized for RF grounding and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Terminal 1 (RF Input / Gate) | Gate connection | RF signal input node; requires external DC blocking and gate bias network |
| Terminal 2 (RF Output / Drain) | Drain connection | High-power RF output node; connects to output matching network and DC supply via RF choke |
| Terminal 3 (Source) | Source terminal | Internally connected to exposed metal backside - must be soldered or bolted to ground plane for RF return and thermal path |
| Terminal 4 (Source) | Source terminal | Duplicate source connection for enhanced grounding and current sharing; electrically tied to Terminal 3 and backside |
Key Features
| Feature | Design Value |
|---|---|
| Integrated ESD Protection | HBM Class 1C, MM Class A, CDM Class IV - eliminates need for external gate protection in most ISM PCB layouts |
| 225°C Capable Plastic Package | Enables high-reliability operation in sealed enclosures or high-ambient environments without ceramic packaging cost penalty |
| Series-Equivalent Large-Signal Impedance Data | Provided for 450 MHz (Zsource, Zload) - accelerates matching network synthesis without iterative EM simulation |
| Wide Negative VGS Range (–6.0 V) | Supports deep Class C operation for high-efficiency narrowband amplifiers with improved harmonic suppression |
| Rugged 10:1 VSWR Rating | Validated at full 300 W CW - reduces risk of field failure in antenna-tuning or plasma-load applications |
Applications
| Industrial Heating | Medical Diathermy |
|---|---|
|
Use Scenario: RF energy delivery into dielectric materials (e.g., plastic welding, food processing) using solid-state 27.12 MHz or 40.68 MHz generators. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 300 W CW into variable load impedances. Use Value: 10:1 VSWR tolerance prevents shutdown during material loading/unloading transients; 60% efficiency minimizes cooling requirements in compact cabinets. |
Use Scenario: Therapeutic RF heating of human tissue in physiotherapy equipment operating at 27.12 MHz or 40.68 MHz. IC Role / Device Role / Timing Role: High-reliability, thermally stable RF power stage driving tuned applicator circuits. Use Value: 225°C junction rating and 0.24°C/W RθJC ensure long-term reliability under continuous duty cycles; RoHS-compliant plastic package meets medical safety standards. |
| ISM Band Amplifiers | Scientific Plasma Generation |
|
Use Scenario: Solid-state replacement for vacuum tube amplifiers in 915 MHz industrial microwave ovens and RF drying systems. IC Role / Device Role / Timing Role: Unmatched broadband power transistor used in push-pull or single-ended final amplifier modules. Use Value: 22 dB gain reduces driver stage count; characterized Zsource/Zload data enables rapid impedance-matching design for 915 MHz band compliance. |
Use Scenario: RF excitation of low-pressure gas plasmas in semiconductor etching, thin-film deposition, or analytical instrumentation. IC Role / Device Role / Timing Role: High-stability CW amplifier providing precise forward power control in feedback-regulated plasma sources. Use Value: Stable 900 mA IDQ and tight VGS(th) distribution (0.9–2.4 V) enable repeatable bias point setting across production units; low Crss (2.8 pF) improves isolation in multi-stage designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP6300HR5 | Higher Pout (600 W), higher VDD (65 V), same TO-270 WB-4 package but different internal layout and bias requirements | Targeted for 13.56 MHz and 27.12 MHz high-power industrial systems requiring >400 W output | Select when scaling output power beyond 300 W while retaining mechanical compatibility and thermal interface design |
| PD85008 | Lower Pout (80 W), 28 V operation, SOT-539 package - not pin-compatible; different bias topology and thermal management | Suitable for lower-power ISM drivers or pre-driver stages where footprint and cost constrain design | Choose for cost-sensitive, space-constrained applications below 100 W; requires redesign of heatsink, bias network, and matching |
Compared with MRFE6VP6300HR5 and PD85008, the MRF6V4300NBR5 occupies a unique mid-power niche: it delivers proven 300 W reliability at 50 V with industry-standard TO-270 mounting, whereas MRFE6VP6300HR5 scales power at higher voltage and PD85008 trades output for compactness and lower system cost.
Availability
MRF6V4300NBR5 is available at Aetrix Electronics and suitable for industrial heating systems, medical diathermy equipment, ISM band amplifiers, and scientific plasma generators requiring stable component supply and long-lifecycle support.
Supply support for MRF6V4300NBR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this LDMOS product line for industrial and scientific applications.
The MRF6V series was specifically developed for high-efficiency, high-ruggedness RF power amplification in unlicensed ISM bands, emphasizing thermal robustness, VSWR tolerance, and ease of impedance matching in production-grade transmitter designs.
FAQ
What is the maximum continuous drain voltage rating for the MRF6V4300NBR5?
The MRF6V4300NBR5 has a maximum drain-source voltage (VDSS) rating of +110 Vdc, with a minimum of –0.5 Vdc. This rating is validated per Freescale's qualification up to 50 VDD operation, and the device is routinely operated at 50 Vdc in typical 300 W CW applications. Exceeding 110 Vdc risks permanent breakdown.
Does the MRF6V4300NBR5 require external gate protection diodes?
No - the MRF6V4300NBR5 integrates ESD protection qualified to HBM Class 1C, MM Class A, and CDM Class IV per JESD22 standards. External gate protection is not required in standard ISM band amplifier designs when proper PCB layout (short gate traces, grounded guard rings) and controlled handling procedures are followed.
How is thermal management implemented for the MRF6V4300NBR5 in production systems?
The MRF6V4300NBR5 uses its exposed source pad (backside metal) as the primary thermal and RF ground path. Freescale specifies bolt-down mounting per AN3263 or solder-reflow per AN1907. With RθJC = 0.24°C/W, maintaining case temperature ≤150°C requires a heatsink thermal resistance ≤0.11°C/W when dissipating 300 W at 60% efficiency (120 W heat).
What are the recommended gate bias conditions for Class AB operation of the MRF6V4300NBR5?
For Class AB operation at 450 MHz and 300 W CW output, the MRF6V4300NBR5 is specified with VDD = 50 Vdc and IDQ = 900 mA, yielding a typical gate quiescent voltage (VGS(Q)) of 2.7 Vdc (range: 1.9–3.4 Vdc). A stable, low-noise, temperature-compensated bias network is required to maintain this point across ambient and thermal drift.
Is the MRF6V4300NBR5 suitable for pulsed RF applications?
Yes - although characterized for CW performance, the MRF6V4300NBR5's rugged lateral MOSFET structure and 10:1 VSWR rating make it suitable for pulsed operation in radar simulators, plasma ignition, and RF ablation systems. Pulse width, duty cycle, and peak power must remain within safe operating area (SOA) limits shown in Figure 5, and thermal averaging must respect TJ ≤ 225°C.
MRF6V4300NBR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-272BB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 450MHz
- Gain:
- 22dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 900 mA
- Power - Output:
- 300W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-272 WB-4
MRF6V4300NBR5 FAQ
1.How can I place an order for MRF6V4300NBR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6V4300NBR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6V4300NBR5 reliable?
The price and inventory of MRF6V4300NBR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V4300NBR5 is usually 5 days.
3.What payment methods are accepted for MRF6V4300NBR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V4300NBR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6V4300NBR5?
MRF6V4300NBR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6V4300NBR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6V4300NBR5?
For technical support, including MRF6V4300NBR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V4300NBR5 requirements.
6.How does Aetrix verify that MRF6V4300NBR5 is sourced from the original manufacturer or authorized distributors?
All MRF6V4300NBR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V4300NBR5 meets industry standards.
7.What is the process for return or replacement of MRF6V4300NBR5?
All MRF6V4300NBR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V4300NBR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6V4300NBR5 part is unused and in its original packaging.
Return procedure for MRF6V4300NBR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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