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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6V4300NR5

Name: MRF6V4300NR5
Brand: NXP Semiconductors
SKU: MRF6V4300NR5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6V4300NR5

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: TO-270AB

Datasheet:: MRF6V4300NR5.pdf

Description:: RF MOSFET LDMOS 50V TO270-4

Quantity:: RFQ Add To RFQ list

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Inventory:3,250

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Product details

Overview

MRF6V4300NR5 from NXP Semiconductors (formerly Freescale) is a high-power RF lateral N-channel MOSFET designed for broadband CW amplifier stages in industrial, scientific, and medical (ISM) transmitters operating up to 600 MHz. It delivers 300 W output at 450 MHz with 22 dB power gain and 60% drain efficiency under 50 Vdc bias and 900 mA quiescent drain current.

For engineers reviewing the MRF6V4300NR5 datasheet, MRF6V4300NR5 pinout, MRF6V4300NR5 application, or MRF6V4300NR5 equivalent, key selection criteria include VSWR tolerance (10:1 @ 450 MHz), junction temperature rating (225°C), thermal resistance (0.24°C/W), ESD protection class (HBM 1C), and TO-272 WB-4 plastic package compatibility with bolt-down or reflow mounting.

Technical Context

This device operates as an unmatched, single-ended RF power transistor in Class AB or Class C configurations. Its lateral LDMOS structure supports high-voltage operation (up to +110 V_DS) and wide negative gate-source voltage range (–6.0 V_GS) for robust large-signal handling and improved linearity control.

Characterized using series-equivalent large-signal impedance parameters (Z_source = 0.39 + j1.26 Ω, Z_load = 1.27 + j0.96 Ω at 450 MHz), it requires external input/output matching networks. Thermal design must account for 0.24°C/W junction-to-case resistance and strict mounting guidelines per AN3263 (bolt-down) or AN1907 (reflow).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	+110 Vdc - Enables stable operation in 50 V supply systems with margin against transient overvoltage
P_OUT CW	300 W @ 450 MHz - Delivers high RF output power in ISM band amplifiers without derating
Power Gain	22 dB typical - Reduces driver stage complexity and enables efficient multi-stage amplifier design
Drain Efficiency	60% @ 300 W - Minimizes heat dissipation and improves system-level power budgeting
R_θJC	0.24°C/W - Requires high-conductivity heatsink interface (e.g., thermal compound + flat mounting surface)
VSWR Tolerance	10:1 @ 450 MHz, 50 Vdc - Survives severe load mismatches without failure in unregulated antenna environments
T_J Max	225°C - Supports high ambient temperature operation when paired with proper thermal management

Pinout & Package

Package: TO-272 WB-4 (Case 1484-04, Style 1), plastic overmolded package with exposed backside source terminal. Mounting surface is electrically connected to source.

Pin/Terminal	Circuit Role	Design Meaning
RFout / V_DS	Drain terminal	Main RF output node; connects to output matching network and DC supply via RF choke
RFin / V_GS	Gate terminal	RF input node; requires DC blocking and bias feed network; sensitive to ESD
Source (exposed backside)	Source terminal	Common reference for both RF and DC paths; must be low-inductance, low-impedance connection to ground plane

Key Features

Feature	Design Value
Integrated ESD protection	HBM Class 1C, MM Class A, CDM Class IV - Eliminates need for external gate protection diodes in most PCB layouts
225°C capable plastic package	Enables operation at elevated case temperatures without package degradation or delamination
Wide V_GS range (–6.0 to +10 V)	Supports deep Class C biasing for high-efficiency pulsed or narrowband applications
Qualified for 50 V_DD operation	Validated reliability at full-rated supply voltage - no derating required for 50 V systems
RoHS compliant, tape-and-reel (R5 suffix)	R5 = 500 units per 44 mm, 13-inch reel - compatible with automated SMT placement equipment

Applications

Industrial RF Heating	Medical Diathermy Systems
Use Scenario: High-power RF energy delivery into dielectric materials (e.g., plastic welding, food processing) at 27.12 MHz or 40.68 MHz. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering continuous 300 W into tuned resonant cavity load. Use Value: 10:1 VSWR tolerance ensures uninterrupted operation despite variable load coupling and material moisture changes.	Use Scenario: Therapeutic tissue heating in physiotherapy devices operating at 27.12 MHz or 40.68 MHz. IC Role / Device Role / Timing Role: Linear RF power stage generating precise, stable CW output for controlled thermal dose delivery. Use Value: 60% drain efficiency reduces cooling requirements and enables compact, portable system form factors.
ISM Band Broadcast Transmitters	Scientific Plasma Generation
Use Scenario: Solid-state AM/FM exciter or UHF repeater final amplifier in licensed ISM infrastructure. IC Role / Device Role / Timing Role: Unmatched broadband power transistor used in push-pull or single-ended PA topology. Use Value: 22 dB power gain simplifies driver stage design and maintains signal integrity across 10–600 MHz bandwidth.	Use Scenario: RF power source for laboratory plasma chambers requiring stable 300 W CW at 13.56 MHz or 27.12 MHz. IC Role / Device Role / Timing Role: High-reliability RF power switch enabling repeatable plasma ignition and sustained discharge. Use Value: 225°C junction rating allows sustained operation under high thermal stress during extended plasma runs.

Industrial RF Heating

Medical Diathermy Systems

Use Scenario: High-power RF energy delivery into dielectric materials (e.g., plastic welding, food processing) at 27.12 MHz or 40.68 MHz.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering continuous 300 W into tuned resonant cavity load.

Use Value: 10:1 VSWR tolerance ensures uninterrupted operation despite variable load coupling and material moisture changes.

Use Scenario: Therapeutic tissue heating in physiotherapy devices operating at 27.12 MHz or 40.68 MHz.

IC Role / Device Role / Timing Role: Linear RF power stage generating precise, stable CW output for controlled thermal dose delivery.

Use Value: 60% drain efficiency reduces cooling requirements and enables compact, portable system form factors.

ISM Band Broadcast Transmitters

Scientific Plasma Generation

Use Scenario: Solid-state AM/FM exciter or UHF repeater final amplifier in licensed ISM infrastructure.

IC Role / Device Role / Timing Role: Unmatched broadband power transistor used in push-pull or single-ended PA topology.

Use Value: 22 dB power gain simplifies driver stage design and maintains signal integrity across 10–600 MHz bandwidth.

Use Scenario: RF power source for laboratory plasma chambers requiring stable 300 W CW at 13.56 MHz or 27.12 MHz.

IC Role / Device Role / Timing Role: High-reliability RF power switch enabling repeatable plasma ignition and sustained discharge.

Use Value: 225°C junction rating allows sustained operation under high thermal stress during extended plasma runs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRFE6VP6300HR5	Higher P_OUT (600 W), higher f_max (1.5 GHz), same TO-272 WB-4 package but rated for 65 V_DD	Better suited for UHF broadcast and radar where bandwidth >600 MHz is required	Select MRFE6VP6300HR5 only if system requires >300 W output or operation above 600 MHz
PD85008-E	Lower P_OUT (80 W), smaller TO-247 package, 28 V_DD max, lower R_θJC (0.35°C/W)	Targeted at compact, lower-power ISM systems with space-constrained heatsinking	Choose PD85008-E for cost-sensitive, low-power designs where 300 W capability is unnecessary

Compared with MRFE6VP6300HR5 and PD85008-E, the MRF6V4300NR5 offers optimal balance of 300 W output, 450 MHz performance, and thermal robustness in industrial-grade packaging - making it the preferred choice for fixed-frequency, high-reliability ISM amplifiers where 50 V operation and 10:1 VSWR resilience are mandatory.

Availability

MRF6V4300NR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, ISM broadcast transmitters, and scientific plasma generation requiring stable component supply and long-term lifecycle support.

Supply support for MRF6V4300NR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to support its high-power RF LDMOS portfolio for industrial and scientific applications.

The MRF6V4300NR5 belongs to NXP's legacy RF Power Transistor product line, engineered specifically for rugged, high-efficiency CW amplification in 10–600 MHz ISM bands where reliability under mismatched loads is critical.

FAQ

What is the maximum operating frequency of the MRF6V4300NR5?

The MRF6V4300NR5 is characterized and specified for operation from 10 MHz up to 600 MHz. Its typical CW performance data (300 W output, 22 dB gain, 60% efficiency) is validated at 450 MHz, and it maintains usable gain and stability across the full 10–600 MHz band when properly matched. Operation beyond 600 MHz is not supported by characterization or reliability testing.

Does the MRF6V4300NR5 require external gate protection diodes?

No, the MRF6V4300NR5 integrates on-chip ESD protection rated to HBM Class 1C, MM Class A, and CDM Class IV. This eliminates the need for discrete gate protection diodes in standard PCB layouts, provided layout practices follow Freescale Application Note AN1907 for reflow mounting or AN3263 for bolt-down mounting to avoid mechanical stress-induced failure.

What is the meaning of the 'R5' suffix in MRF6V4300NR5?

The 'R5' suffix indicates tape-and-reel packaging: 500 units per 44 mm wide, 13-inch diameter reel. This format is optimized for automated SMT placement and aligns with industry-standard handling for high-power plastic packages like TO-272 WB-4. The 'R1' variant (500 units) and 'R5' are functionally identical; only packaging differs.

Can the MRF6V4300NR5 be used in Class C amplifier configurations?

Yes, the MRF6V4300NR5 supports Class C operation due to its extended negative gate-source voltage range (–6.0 V_GS), which enables deep cutoff biasing. Its lateral LDMOS structure and 225°C junction rating allow reliable pulsed or narrowband high-efficiency operation, though external bias sequencing and thermal monitoring remain essential per AN1955 guidelines.

What thermal resistance value applies to the MRF6V4300NR5 under full-power conditions?

The MRF6V4300NR5 has a junction-to-case thermal resistance (R_θJC) of 0.24°C/W, measured at 300 W CW and 83°C case temperature. This value assumes proper mounting per AN3263 (bolt-down) or AN1907 (reflow), including flatness ≤0.05 mm, torque-controlled fasteners, and high-performance thermal interface material - deviations increase effective thermal resistance.

MRF6V4300NR5 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-270AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: LDMOS

Configuration:: -

Frequency:: 450MHz

Gain:: 22dB

Voltage - Test:: 50 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 900 mA

Power - Output:: 300W

Voltage - Rated:: 110 V

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-270 WB-4

MRF6V4300NR5 FAQ

1.How can I place an order for MRF6V4300NR5 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6V4300NR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6V4300NR5 reliable?

The price and inventory of MRF6V4300NR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6V4300NR5 is usually 5 days.

3.What payment methods are accepted for MRF6V4300NR5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6V4300NR5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6V4300NR5?

MRF6V4300NR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6V4300NR5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6V4300NR5?

For technical support, including MRF6V4300NR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6V4300NR5 requirements.

6.How does Aetrix verify that MRF6V4300NR5 is sourced from the original manufacturer or authorized distributors?

All MRF6V4300NR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6V4300NR5 meets industry standards.

7.What is the process for return or replacement of MRF6V4300NR5?

All MRF6V4300NR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6V4300NR5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6V4300NR5 part is unused and in its original packaging.

Return procedure for MRF6V4300NR5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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