NXP Semiconductors MRF6VP11KGSR5

Overview

MRF6VP11KGSR5 from NXP Semiconductors (formerly Freescale) is a 1000 W peak, 50 V lateral N-channel RF power MOSFET designed for pulse wideband amplification in push-pull configurations at frequencies up to 150 MHz. It delivers 26 dB power gain and 71% drain efficiency at 130 MHz with 100 μs pulse width and 20% duty cycle, and is qualified for industrial, medical, and scientific RF amplifier stages requiring high VSWR tolerance.

For engineers reviewing the MRF6VP11KGSR5 datasheet, MRF6VP11KGSR5 pinout, MRF6VP11KGSR5 application, or MRF6VP11KGSR5 equivalent, this device is selected for high-power pulsed RF systems where thermal robustness (T_J = 225°C), ESD protection (HBM Class 2), and 10:1 VSWR capability at 1000 W peak are critical design requirements.

Technical Context

This device operates as an unmatched, enhancement-mode RF power transistor optimized for broadband pulse operation between 1.8–150 MHz. Its lateral MOSFET structure supports push-pull topology with dual independent gate and drain terminals, enabling balanced input/output matching networks using series-equivalent large-signal impedance parameters (Z_source = 1.58 + j6.47 Ω, Z_load = 4.6 + j1.85 Ω at 130 MHz).

It features integrated ESD protection per JESD22-A114 (2000 V HBM), CW-capable operation with adequate heatsinking, and a negative gate-source voltage range extended to –6.0 V for improved Class C biasing. Thermal performance is characterized by Z_θJC = 0.03 °C/W under pulsed conditions (100 μs, 20% duty cycle) and R_θJC = 0.13 °C/W for 1000 W CW operation.

Key Specifications

Pinout & Package

Package: CASE 2282–02 (NI–1230S–4 Gull Wing), 4-terminal ceramic/metal flange-mount package with gull-wing leads. Designed for high-thermal-conductivity mounting on copper baseplates or heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP11KGSR5, MRF6VP11KHR6 offers identical RF performance in a different mechanical form factor, while MRFE6VP61KHSR5 provides a thermally and electrically compatible lower-power alternative-both avoid redesign but serve distinct power-class and assembly requirements.

Availability

MRF6VP11KGSR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical MRI excitation, and scientific plasma generation requiring stable component supply across long-lifecycle equipment programs.

Supply support for MRF6VP11KGSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale in 2015 and continues to support its RF power portfolio with full documentation, modeling tools, and application engineering resources.

The MRF6VP11KGSR5 belongs to the Airfast® RF Power LDMOS family, engineered specifically for high-efficiency, high-reliability pulsed and CW RF amplification in industrial, scientific, and medical systems operating below 150 MHz.

FAQ

What is the maximum continuous drain current rating for the MRF6VP11KGSR5?

The MRF6VP11KGSR5 does not specify a maximum continuous drain current (I_D) rating in its datasheet. Instead, safe operation is defined by its DC Safe Operating Area (SOA), which depends on V_DS, case temperature, and pulse conditions. At T_C = 25°C, it supports up to ~100 A at V_DS = 10 V in pulsed mode, but practical CW current is limited by thermal resistance (R_θJC = 0.13 °C/W) and maximum junction temperature (225°C). Always refer to Figure 5 in the MRF6VP11KH Rev. 8 datasheet for SOA boundaries when designing with MRF6VP11KGSR5.

Can the MRF6VP11KGSR5 be operated in Class AB linear mode?

Yes, the MRF6VP11KGSR5 can operate in Class AB, though it is optimized for pulsed Class C and push-pull configurations. Its gate threshold voltage (V_GS(th) = 1.63 V typ) and quiescent gate voltage range (V_GS(Q) = 1.5–3.5 V at I_DQ = 150 mA) support stable linear biasing. However, linearity and IMD performance must be verified per application; Freescale's test data focuses on pulsed operation, so third-order intercept (OIP3) and adjacent channel power ratio (ACPR) are not characterized in the MRF6VP11KGSR5 datasheet.

What is the recommended gate drive voltage range for the MRF6VP11KGSR5?

The MRF6VP11KGSR5 specifies a gate-source voltage range of –6.0 V to +10 V DC. For reliable operation, gate drive should stay within this window: negative swing down to –6.0 V enables deep Class C cutoff, while positive swing up to +10 V ensures full enhancement. Exceeding +10 V risks gate oxide degradation. Gate drive circuits must also limit dV/dt and provide low-impedance return paths to prevent oscillation-especially critical given the device's high C_iss (506 pF) and gain at VHF frequencies.

Does the MRF6VP11KGSR5 require external ESD protection?

No, the MRF6VP11KGSR5 includes integrated ESD protection rated to JESD22-A114 Class 2 (2000 V HBM), JESD22-A115 Class A (125 V MM), and JESD22-C101 Class IV (2000 V CDM). This built-in protection eliminates the need for discrete TVS diodes or RC filters on gate lines in most layouts. However, proper PCB layout-short traces, ground plane proximity, and controlled impedance routing-remains essential to preserve ESD robustness and RF stability in the final MRF6VP11KGSR5 implementation.

How does the thermal performance of MRF6VP11KGSR5 compare between pulsed and CW operation?

The MRF6VP11KGSR5 exhibits significantly better thermal response in pulsed mode: Z_θJC = 0.03 °C/W (100 μs, 20% duty) versus R_θJC = 0.13 °C/W for 1000 W CW. This 4.3× improvement means pulsed operation generates far less average junction temperature rise, enabling higher peak power without exceeding T_J = 225°C. For example, at 1000 W peak with 20% duty, average dissipation is 200 W-yet thermal impedance is low enough to keep ΔT_JC ≈ 6°C, whereas CW at 200 W would yield ΔT_JC ≈ 26°C. This distinction is critical when selecting heatsink mass and forced-air cooling for MRF6VP11KGSR5.