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NXP Semiconductors MRF6VP11KHR5
- Part No.:
- MRF6VP11KHR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230
- Datasheet:
-
MRF6VP11KHR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:841
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Product details
Overview
MRF6VP11KHR5 from NXP Semiconductors (formerly Freescale) is a 1000 W peak, 50 V lateral N-channel RF power MOSFET designed for pulse wideband amplifier stages in industrial, medical, and scientific systems operating from 1.8–150 MHz. It delivers 26 dB power gain and 71% drain efficiency at 130 MHz under 100 μs pulse width / 20% duty cycle conditions, with rated junction temperature up to 225°C and 10:1 VSWR ruggedness.
For engineers reviewing the MRF6VP11KHR5 datasheet, MRF6VP11KHR5 pinout, MRF6VP11KHR5 application, or MRF6VP11KHR5 equivalent, this page provides verified package mapping, push-pull configuration guidance, thermal impedance data (ZθJC = 0.03 °C/W pulsed), ESD protection ratings (HBM Class 2, CDM Class IV), and validated alternative part selection for high-power RF amplifier design.
Technical Context
This device operates as an unmatched broadband RF power transistor optimized for pulsed operation in push-pull configurations. Its lateral MOSFET architecture supports 50 V DC supply, 150 mA quiescent drain current, and handles 1000 W peak output with 0.03 °C/W pulsed thermal impedance at 80°C case temperature.
It features integrated ESD protection (2000 V HBM, 2000 V CDM), a –6.0 to +10 V gate-source voltage range, and is characterized using series-equivalent large-signal impedance parameters (Zsource = 1.58 + j6.47 Ω, Zload = 4.6 + j1.85 Ω at 130 MHz) for matching network design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1.8–150 MHz - Supports HF/VHF broadband amplification without retuning across amateur radio, MRI gradient drivers, and plasma generators. |
| Peak Output Power | 1000 W - Enables high-energy pulsed RF delivery in industrial heating and medical diathermy systems. |
| Drain Efficiency | 71% @ 130 MHz - Reduces thermal load and cooling requirements in CW-capable 50 V amplifier stages. |
| Power Gain | 26 dB @ 130 MHz - Delivers >400× voltage gain per device side, simplifying driver stage design in push-pull PA architectures. |
| VSWR Tolerance | 10:1 @ 50 Vdc, 130 MHz - Ensures reliable operation under mismatched antenna or load conditions without failure. |
| Junction Temperature | 225°C max - Allows sustained high-power operation with appropriate heatsinking in sealed or convection-limited enclosures. |
| Thermal Impedance (Pulsed) | ZθJC = 0.03 °C/W - Enables precise transient junction temperature prediction during 100 μs pulses at 20% duty cycle. |
Pinout & Package
Package: CASE 375D-05 (NI-1230-4), ceramic/metal flange-mount with solderable baseplate. Designed for forced-air or liquid-cooled heatsink mounting with low-inductance drain connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFinA / VGSA) | Gate terminal, Side A | RF input control node for first transistor half; requires matched impedance (1.58 + j6.47 Ω) and negative bias capability down to –6 V. |
| 2 (RFinB / VGSB) | Gate terminal, Side B | RF input control node for second transistor half; identical electrical specs to Pin 1; enables balanced push-pull drive. |
| 3 (RFoutA / VDSA) | Drain terminal, Side A | High-current RF output node; connected to load impedance (4.6 + j1.85 Ω); shares common source with Pin 4. |
| 4 (RFoutB / VDSB) | Drain terminal, Side B | High-current RF output node; electrically symmetrical to Pin 3; forms differential output pair with Pin 3 in push-pull mode. |
Key Features
| Feature | Design Value |
|---|---|
| Push-pull optimized layout | Integrated dual-gate/dual-drain structure eliminates external combiner loss and phase-matching complexity in 1 kW amplifiers. |
| ESD robustness | HBM Class 2 (2000 V), CDM Class IV (2000 V) - Eliminates need for external gate protection in production RF PCBs. |
| Negative VGS range | –6.0 V minimum - Enables deep Class C biasing for improved efficiency in pulsed radar and MRI excitation circuits. |
| CW operational rating | Rated for continuous-wave use with adequate cooling - Validated at 1000 W CW, 100 MHz, 67°C case temperature (RθJC = 0.13 °C/W). |
| Large-signal impedance characterization | Published Zsource/Zload at 130 MHz - Enables deterministic microstrip matching network synthesis without iterative EM simulation. |
Applications
| Industrial RF Heating | Medical Diathermy Systems |
|---|---|
|
Use Scenario: High-power RF energy delivery into conductive materials for plastic welding, food processing, or semiconductor wafer heating. IC Role / Device Role / Timing Role: Final-stage RF power switch delivering 1000 W peak pulses at 27.12 MHz or 40.68 MHz ISM bands. Use Value: 10:1 VSWR tolerance prevents shutdown during load impedance shifts caused by material dielectric changes during heating cycles. |
Use Scenario: Therapeutic tissue heating in physiotherapy equipment requiring precise, repeatable 27 MHz RF bursts. IC Role / Device Role / Timing Role: Pulsed RF power amplifier operating at 130 μs pulse width, 20% duty cycle, 50 V supply. Use Value: 71% drain efficiency minimizes heat generation in compact, fanless enclosures while maintaining stable output over extended treatment sessions. |
| Scientific Plasma Generation | Amateur Radio HF Amplifiers |
|
Use Scenario: Sustained plasma ignition and maintenance in vacuum chamber experiments using 1.8–30 MHz RF coupling. IC Role / Device Role / Timing Role: Unmatched broadband amplifier core supporting variable-frequency sweep without retuning. Use Value: 1.8–150 MHz frequency coverage enables single-device platform compatibility across multiple plasma resonance modes. |
Use Scenario: Legal-limit HF linear amplifier for 1.8–30 MHz amateur bands, operating in SSB or digital modes with high peak-to-average ratio. IC Role / Device Role / Timing Role: Push-pull output stage delivering >1 kW PEP with 26 dB small-signal gain and low IMD. Use Value: Dual-gate/dual-drain pinout simplifies balanced driver design and reduces even-order harmonic distortion critical for FCC-compliant emissions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP11KGSR5 | Gull-wing surface-mount package (CASE 2282-02), same die, 50-unit tape-and-reel (R5 suffix). | Requires reflow-compatible PCB layout; lower profile but reduced thermal mass vs. flange-mount MRF6VP11KHR5. | Select when automated assembly, space-constrained layouts, or lower assembly cost outweigh maximum thermal performance. |
| MRFE6VP61KHR5 | Same package, but 600 W peak rating, 23 dB gain, 65% efficiency at 130 MHz; lower VBRDSS (65 V). | Better suited for 28–32 V systems; not rated for 50 V operation or 1000 W peak loads. | Choose for cost-sensitive 600 W designs where 50 V headroom and 1000 W peak are unnecessary. |
Compared with MRF6VP11KHR5, MRF6VP11KGSR5 offers identical RF performance in a surface-mount format ideal for automated production, while MRFE6VP61KHR5 trades peak power and voltage rating for lower cost and thermal footprint in sub-1 kW applications.
Availability
MRF6VP11KHR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy systems, and scientific plasma generation requiring stable component supply, long-life reliability, and traceable sourcing for high-power RF amplifier builds.
Supply support for MRF6VP11KHR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and manufacturing continuity for the MRF6VP family.
The MRF6VP series was engineered specifically for ruggedized, high-efficiency pulsed RF amplification in industrial, medical, and scientific equipment - emphasizing VSWR tolerance, thermal survivability, and large-signal impedance predictability.
FAQ
What is the maximum continuous drain current rating for MRF6VP11KHR5?
The MRF6VP11KHR5 does not specify a maximum continuous drain current (ID) rating independent of thermal conditions. Its safe operating area is defined by junction temperature (TJ ≤ 225°C), case temperature (TC ≤ 150°C), and thermal resistance (RθJC = 0.13 °C/W for CW). At 50 V supply and 1000 W CW, average drain current is approximately 20 A - but actual limit depends on heatsink performance and ambient conditions. Always validate using the Freescale MTTF calculator.
Can MRF6VP11KHR5 be used in Class AB linear amplifier designs?
Yes, MRF6VP11KHR5 supports Class AB operation with proper gate biasing (VGS(Q) = 1.5–3.5 V typical) and adequate heatsinking. Its 26 dB gain and 71% efficiency at 130 MHz are measured under pulsed Class C conditions, but the device's lateral MOSFET structure and –6 V gate rating allow stable Class AB operation across 1.8–150 MHz. Linear applications require careful attention to load-pull stability and IMD performance per AN1955.
What is the gate threshold voltage (VGS(th)) specification for MRF6VP11KHR5?
The gate threshold voltage for MRF6VP11KHR5 is specified as 1.0–3.0 V (typical 1.63 V) at VDS = 10 V and ID = 1600 μA. This parameter defines the minimum gate voltage required to initiate conduction and is critical for setting quiescent bias points in push-pull amplifier stages. The wide min–max range reflects process variation and must be measured per unit during functional test.
Does MRF6VP11KHR5 require external gate protection diodes?
No, MRF6VP11KHR5 integrates ESD protection meeting JESD22-A114 (HBM Class 2, 2000 V), JESD22-A115 (MM Class A, 125 V), and JESD22-C101 (CDM Class IV, 2000 V). External gate protection is not required in standard PCB layouts with controlled ESD handling. However, transient voltage suppressors may still be recommended in high-noise industrial environments where fast-rising gate transients exceed ESD test conditions.
What is the recommended gate drive impedance for MRF6VP11KHR5 in push-pull configuration?
The MRF6VP11KHR5 is characterized with series-equivalent source impedance Zsource = 1.58 + j6.47 Ω at 130 MHz in balanced push-pull configuration. For optimal gain and stability, the gate drive network should present this complex impedance - typically implemented via microstrip matching sections (e.g., 0.206″ × 0.253″) as shown in Figure 2 of the Freescale MRF6VP11KH datasheet. Deviations cause gain ripple and potential oscillation.
MRF6VP11KHR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 1.8MHz ~ 150MHz
- Gain:
- 26dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 6 A
- Power - Output:
- 1000W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230
MRF6VP11KHR5 FAQ
1.How can I place an order for MRF6VP11KHR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6VP11KHR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6VP11KHR5 reliable?
The price and inventory of MRF6VP11KHR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP11KHR5 is usually 5 days.
3.What payment methods are accepted for MRF6VP11KHR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP11KHR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6VP11KHR5?
MRF6VP11KHR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6VP11KHR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6VP11KHR5?
For technical support, including MRF6VP11KHR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP11KHR5 requirements.
6.How does Aetrix verify that MRF6VP11KHR5 is sourced from the original manufacturer or authorized distributors?
All MRF6VP11KHR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP11KHR5 meets industry standards.
7.What is the process for return or replacement of MRF6VP11KHR5?
All MRF6VP11KHR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP11KHR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6VP11KHR5 part is unused and in its original packaging.
Return procedure for MRF6VP11KHR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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