NXP Semiconductors MRF6VP11KHR6

Overview

MRF6VP11KHR6 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for pulse wideband amplification up to 150 MHz, delivering 1000 W peak (200 W avg.) output at 130 MHz with 50 Vdc drain supply, 26 dB power gain, and 71% drain efficiency in push-pull configuration - used in industrial RF heating, medical diathermy, and scientific plasma generation systems.

For engineers reviewing the MRF6VP11KHR6 datasheet, MRF6VP11KHR6 pinout, MRF6VP11KHR6 application, or MRF6VP11KHR6 equivalent, this page delivers verified electrical specs, thermal performance data, ESD protection class ratings, push-pull impedance matching guidance, and real-world test circuit component values per Freescale's Rev. 8 documentation.

Technical Context

The MRF6VP11KHR6 operates as an unmatched broadband RF power transistor optimized for pulsed operation (100 μs pulse width, 20% duty cycle) at VDD = 50 Vdc and IDQ = 150 mA, with series-equivalent large-signal impedance parameters characterized for balanced push-pull design - Zsource = 1.58 + j6.47 Ω and Zload = 4.6 + j1.85 Ω at 130 MHz.

It supports CW operation with adequate cooling (RθJC = 0.13 °C/W), handles 10:1 VSWR at 50 Vdc/130 MHz/1000 W peak, and features integrated ESD protection rated Class 2 HBM (2000 V), Class A MM (125 V), and Class IV CDM (2000 V).

Key Specifications

Pinout & Package

Package: CASE 375D–05 (NI–1230–4), ceramic/metal hermetic package with flanged base for direct heatsink mounting and low-inductance grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6VP11KHR6, MRFE6VP61KHSR5 offers marginally better thermal performance but requires PCB redesign and lacks push-pull impedance reference data, while BLF188XR extends upper frequency range at the cost of unverified VSWR ruggedness - making MRF6VP11KHR6 uniquely suited for established 130 MHz industrial and medical pulsed systems.

Availability

MRF6VP11KHR6 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, scientific plasma generation, broadband test equipment, and high-reliability pulsed amplifier applications requiring stable component supply and long-term lifecycle continuity.

Supply support for MRF6VP11KHR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-voltage LDMOS transistors for industrial, medical, and scientific applications.

The MRF6VP11KHR6 belongs to Freescale's MRF6VP series of high-power lateral MOSFETs engineered specifically for rugged, wideband pulsed RF amplification - emphasizing VSWR tolerance, thermal reliability, and push-pull system integration.

FAQ

What is the maximum continuous drain voltage rating for the MRF6VP11KHR6?

The MRF6VP11KHR6 has a maximum drain-source voltage rating of +110 Vdc and –0.5 Vdc, as specified in Table 1 of the Freescale datasheet Rev. 8. This rating applies under static conditions and must be derated for pulsed or switching operation with voltage overshoot. The device is qualified for operation up to 50 Vdd in functional circuits, and exceeding 50 Vdc in application requires careful SOA validation using Figure 5 (DC Safe Operating Area).

Does the MRF6VP11KHR6 support continuous-wave (CW) operation?

Yes, the MRF6VP11KHR6 supports CW operation with adequate cooling - its thermal resistance RθJC is specified as 0.13 °C/W under 1000 W CW at 100 MHz and case temperature of 67°C. Freescale provides an Electromigration MTTF Calculator and AN1955 Thermal Measurement Methodology to support reliable CW design. However, full 1000 W CW requires aggressive heatsinking and airflow due to its 225°C max junction temperature limit.

What does the "R6" suffix in MRF6VP11KHR6 indicate?

The "R6" suffix denotes tape-and-reel packaging: 150 units per 56 mm wide carrier tape on a 13-inch reel. This format is optimized for automated surface-mount assembly. In contrast, the "R5" suffix (e.g., MRF6VP11KGSR5) indicates 50 units per same-width tape. Both variants share identical electrical and thermal specifications; only packaging quantity and mechanical outline (CASE 375D–05 vs. CASE 2282–02) differ.

How is the MRF6VP11KHR6 configured for push-pull operation?

The MRF6VP11KHR6 is explicitly designed for push-pull use, with two independent gate (Pins 1 & 2) and drain (Pins 3 & 4) terminals enabling balanced 180° phase-driven operation. Freescale's test circuit (Figure 2) and impedance data (Figure 14) assume this configuration - Zsource = 1.58 + j6.47 Ω and Zload = 4.6 + j1.85 Ω are measured gate-to-gate and drain-to-drain, respectively. Lead-forming is not applied before functional testing to preserve straight-lead integrity for gull-wing variants.

What ESD protection level does the MRF6VP11KHR6 provide?

The MRF6VP11KHR6 provides integrated ESD protection meeting Class 2 Human Body Model (2000 V), Class A Machine Model (125 V), and Class IV Charge Device Model (2000 V), as confirmed in Table 3 of the datasheet. These ratings reflect factory-tested performance and eliminate need for external ESD clamps in most RF front-end layouts - though proper PCB grounding and handling protocols remain essential during assembly and field service of the MRF6VP11KHR6.