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NXP Semiconductors MRF6VP21KHR5
- Part No.:
- MRF6VP21KHR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230
- Datasheet:
-
MRF6VP21KHR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:3
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Product details
Overview
MRF6VP21KHR5 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for high-peak pulsed broadband amplification in push-pull configurations. It delivers 1000 W peak output at 225 MHz with 24 dB power gain and 67.5% drain efficiency under VDD = 50 V, IDQ = 150 mA, 100 μs pulse width, and 20% duty cycle - optimized for industrial, scientific, and medical (ISM) RF heating and plasma generation systems.
For engineers reviewing the MRF6VP21KHR5 datasheet, MRF6VP21KHR5 pinout, MRF6VP21KHR5 application, or MRF6VP21KHR5 equivalent, key selection criteria include its 10:1 VSWR ruggedness at 50 V/225 MHz, 225°C maximum junction temperature, 0.03°C/W thermal resistance (junction-to-case), RoHS-compliant NI-1230 package, and verified push-pull operation capability with series-equivalent large-signal impedance characterization.
Technical Context
This device operates as an unmatched RF power transistor in Class C or pulsed AB modes, with gate threshold voltage of 1.68 V (typ), VGS(Q) = 2.2 V (typ) at 150 mA quiescent current, and robust ESD protection rated Class 2 HBM, Class A MM, and Class IV CDM. Its lateral MOSFET architecture enables stable high-power operation up to 235 MHz without internal matching networks.
Thermal design is enabled by low ZθJC = 0.03°C/W under pulsed conditions (100 μs, 20% duty), and DC safe operating area supports continuous operation up to TC = 150°C and TJ = 225°C. The device is characterized using series-equivalent large-signal S-parameters and validated for 50 VDD maximum operation with integrated ESD protection on gate and drain terminals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Max | +110 Vdc - Enables operation up to 50 V supply with 2.2× safety margin against transient overvoltage |
| POUT Peak | 1000 W @ 225 MHz - Delivers full-rated pulsed RF output in ISM band applications requiring high instantaneous power |
| Power Gain | 24 dB (typ) - Provides sufficient small-signal gain to drive final stage without intermediate amplification |
| Drain Efficiency | 67.5% (typ) - Minimizes heat dissipation and DC power consumption in high-duty-cycle pulsed systems |
| VSWR Tolerance | 10:1 @ 50 V/225 MHz - Withstands severe load mismatches without failure in unregulated antenna or plasma load environments |
| TJ Max | 225°C - Supports high-temperature industrial enclosures and extended reliability under thermal stress |
| ZθJC | 0.03°C/W - Enables compact heatsink design with minimal thermal interface resistance for pulsed operation |
Pinout & Package
Package: NI-1230 (Case 375D-05, Style 1), isolated ceramic-metal flange-mount package with copper-tungsten baseplate, rated for >150°C case temperature and compatible with standard RF clamping fixtures.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFinA / VGSA) | Gate terminal A | Input RF port for first device half in push-pull configuration; requires external gate bias network and input matching |
| 2 (RFinB / VGSB) | Gate terminal B | Input RF port for second device half; symmetrical to Pin 1 for balanced drive and common-mode rejection |
| 3 (RFoutA / VDSA) | Drain terminal A | High-power RF output node A; connected to output combiner/matching network in push-pull topology |
| 4 (RFoutB / VDSB) | Drain terminal B | High-power RF output node B; phase-inverted relative to Pin 3 for differential output synthesis |
Key Features
| Feature | Design Value |
|---|---|
| Push-pull optimized layout | Matched dual-gate/dual-drain structure enables precise 180° phase inversion and high-combining efficiency in balanced amplifiers |
| Enhanced negative VGS range | –6 V rating allows deeper Class C biasing for improved efficiency and harmonic suppression in fixed-tuned amplifiers |
| Integrated ESD protection | HBM Class 2, MM Class A, CDM Class IV - eliminates need for external gate protection diodes in production PCB layouts |
| Unmatched broadband design | No internal matching components - provides full flexibility for custom 10–235 MHz impedance transformation and harmonic tuning |
| Rugged 10:1 VSWR capability | Validated at full 1000 W peak and 50 Vdc - ensures field reliability in variable-load RF plasma and induction heating systems |
Applications
| Industrial RF Heating | Medical Diathermy Systems |
|---|---|
Use Scenario: High-power 27.12 MHz or 13.56 MHz RF energy delivery into conductive materials for plastic welding, food processing, or drying. IC Role / Device Role / Timing Role: Final-stage RF power transistor in solid-state generator amplifier chain, operating in pulsed or CW mode with active VSWR protection. Use Value: 1000 W peak output and 67.5% efficiency reduce cooling requirements and system size versus tube-based alternatives while maintaining load tolerance. |
Use Scenario: Controlled deep-tissue heating in therapeutic diathermy equipment operating at 27.12 MHz under strict safety and regulatory compliance. IC Role / Device Role / Timing Role: Primary RF power switch in Class C amplifier stage, delivering precisely regulated pulsed RF energy to applicator electrodes. Use Value: 225°C junction rating and 0.03°C/W thermal resistance enable stable long-duration therapy sessions without thermal derating. |
| Scientific Plasma Generation | Amateur & Broadcast Pulsed Amplifiers |
Use Scenario: Sustaining low-pressure argon or oxygen plasma in vacuum chambers for thin-film deposition or surface treatment. IC Role / Device Role / Timing Role: Unmatched broadband RF power device in push-pull amplifier driving resonant cavity or planar coil load. Use Value: Series-equivalent impedance data (Zsource = 1.16 + j4.06 Ω, Zload = 2.86 + j1.10 Ω @ 225 MHz) enables accurate external matching network design for optimal power transfer. |
Use Scenario: High-peak-power HF/VHF amateur radio linear amplifier or broadcast auxiliary transmitter operating up to 235 MHz. IC Role / Device Role / Timing Role: Final RF power stage in grounded-grid or push-pull configuration, handling intermittent high-SWR antenna loads. Use Value: 10:1 VSWR ruggedness and 24 dB gain allow reliable operation with mobile or tunable antennas without automatic load protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CGHV1F025S | 25 W CW GaN HEMT, 1.8–2.5 GHz, 50 V, smaller NI-780 package | Higher frequency, lower power, GaN technology - unsuitable for 10–235 MHz broadband or 1000 W peak demands | Select only for narrowband UHF applications where bandwidth and peak power are secondary to efficiency and size |
| MRF6V2150N | 1500 W peak LDMOS, same NI-1230 package, 10–235 MHz, but rated for 65 VDD and higher IDSS leakage | Higher peak power and voltage headroom; requires revised gate bias and thermal management due to increased dissipation | Preferred for new designs targeting >1000 W or needing extended voltage margin; not drop-in due to different VGS(th) and thermal profile |
Compared with CGHV1F025S and MRF6V2150N, the MRF6VP21KHR5 offers the optimal balance of 1000 W peak capability, 225 MHz upper-frequency limit, proven push-pull stability, and mature thermal model support - making it the preferred choice for legacy and new ISM-band amplifiers where reliability under mismatch and broad frequency coverage are critical.
Availability
MRF6VP21KHR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, scientific plasma generation, and broadcast auxiliary amplification requiring stable component supply across multi-year production cycles.
Supply support for MRF6VP21KHR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions, automotive radar, RF power, and industrial control ICs, with roots in Philips and Freescale.
The MRF6VP21KHR5 belongs to NXP's legacy RF Power LDMOS portfolio, engineered specifically for high-reliability, high-peak-power pulsed amplification in industrial, scientific, and medical RF systems operating below 235 MHz.
FAQ
What is the maximum continuous drain current rating for the MRF6VP21KHR5?
The MRF6VP21KHR5 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by pulsed and DC thermal limits: maximum junction temperature is 225°C, case temperature is limited to 150°C, and thermal resistance is 0.03°C/W under pulsed conditions. Continuous operation requires active cooling and must stay within the DC SOA curve shown in Figure 5 of the datasheet. For MRF6VP21KHR5, design must prioritize thermal management over current alone.
Can the MRF6VP21KHR5 be used in single-ended configurations?
The MRF6VP21KHR5 is explicitly designed and characterized for push-pull operation, as confirmed by its dual-gate/dual-drain pinout, test circuit documentation, and functional test conditions. While it is electrically possible to use one side (e.g., Pins 1 and 3) in single-ended mode, doing so forfeits specified performance: gain, efficiency, and VSWR ruggedness data apply only to the balanced configuration. The MRF6VP21KHR5 datasheet does not provide single-ended impedance data or SOA validation, so such use is unsupported and not recommended.
What is the gate-source voltage range required for reliable operation of the MRF6VP21KHR5?
The MRF6VP21KHR5 specifies a gate-source voltage range of –6 V to +10 Vdc. The typical gate quiescent voltage (VGS(Q)) is 2.2 V at IDQ = 150 mA and VDD = 50 V. Gate drive must remain within this absolute rating to avoid oxide damage or threshold shift. Negative gate bias down to –6 V is usable for deep Class C operation, improving efficiency and harmonic control - a feature leveraged in MRF6VP21KHR5 push-pull amplifier designs.
Does the MRF6VP21KHR5 require external ESD protection circuitry?
No, the MRF6VP21KHR5 integrates on-die ESD protection rated to Class 2 HBM (per JESD22-A114), Class A MM (per EIA/JESD22-A115), and Class IV CDM (per JESD22-C101). This level of protection is sufficient for standard PCB handling and assembly per IPC standards. External gate protection diodes are unnecessary and may degrade RF performance; the MRF6VP21KHR5 is qualified for direct connection to properly designed gate bias and matching networks.
What thermal interface material is recommended for mounting the MRF6VP21KHR5?
NXP recommends thermally conductive grease or phase-change pads with thermal conductivity ≥3.0 W/m·K and bond line thickness ≤0.1 mm for mounting the MRF6VP21KHR5's NI-1230 package. The device's 0.03°C/W junction-to-case thermal resistance assumes optimal thermal contact between its copper-tungsten baseplate and heatsink. Avoid air gaps or uneven pressure - torque mounting screws to 12–15 in-lb and verify flatness <0.05 mm across the mounting surface to maintain MRF6VP21KHR5 reliability under 1000 W peak loads.
MRF6VP21KHR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 225MHz
- Gain:
- 24dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 1000W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230
MRF6VP21KHR5 FAQ
1.How can I place an order for MRF6VP21KHR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6VP21KHR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6VP21KHR5 reliable?
The price and inventory of MRF6VP21KHR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP21KHR5 is usually 5 days.
3.What payment methods are accepted for MRF6VP21KHR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP21KHR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6VP21KHR5?
MRF6VP21KHR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6VP21KHR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6VP21KHR5?
For technical support, including MRF6VP21KHR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP21KHR5 requirements.
6.How does Aetrix verify that MRF6VP21KHR5 is sourced from the original manufacturer or authorized distributors?
All MRF6VP21KHR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP21KHR5 meets industry standards.
7.What is the process for return or replacement of MRF6VP21KHR5?
All MRF6VP21KHR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP21KHR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6VP21KHR5 part is unused and in its original packaging.
Return procedure for MRF6VP21KHR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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