NXP Semiconductors MRF6VP21KHR6

Overview

MRF6VP21KHR6 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for pulsed wideband amplification up to 235 MHz. It delivers 1000 W peak (200 W avg.) output at 225 MHz with 24 dB power gain and 67.5% drain efficiency under 50 V_DD, 150 mA I_DQ, 100 μs pulse width, and 20% duty cycle - optimized for industrial RF heating, MRI gradient drivers, and pulsed radar transmitters.

For engineers reviewing the MRF6VP21KHR6 datasheet, MRF6VP21KHR6 pinout, MRF6VP21KHR6 application, or MRF6VP21KHR6 equivalent, key selection criteria include its 10:1 VSWR ruggedness at 50 V_DD/225 MHz, push-pull configuration support, 225°C maximum junction temperature, integrated ESD protection (HBM Class 2), and NI-1230 package thermal resistance of 0.03°C/W.

Technical Context

This device operates as a matched pair in push-pull configuration, with dual independent RF input (V_GSA/V_GSB) and output (V_DSA/V_DSB) terminals enabling balanced broadband amplification. Its lateral MOSFET architecture supports high peak power handling while maintaining stable large-signal impedance characteristics across 10–235 MHz.

Thermal performance is defined by Z_θJC = 0.03°C/W under pulsed conditions (100 μs, 20% duty), enabling high-power operation when mounted on a heatsink maintaining T_C ≤ 80°C. The device is characterized using series-equivalent large-signal impedance parameters (Z_source = 1.16 + j4.06 Ω, Z_load = 2.86 + j1.10 Ω at 225 MHz) for precise matching network design.

Key Specifications

Pinout & Package

Package: NI-1230 (Case 375D-05, Style 1), ceramic/metal hermetic package with isolated source terminals and integral heatsink base. Designed for surface-mount on copper baseplate with thermal interface material.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6VP21KHR6, CGHV1F025S offers superior high-frequency efficiency but cannot scale to 1 kW pulsed output, while MRF6V2150N provides pin-compatible packaging at lower power and voltage - neither matches the original's combination of 1000 W peak, 50 V_DD, push-pull symmetry, and 10:1 VSWR tolerance.

Availability

MRF6VP21KHR6 is available at Aetrix Electronics and suitable for industrial RF heating, MRI gradient amplification, and pulsed radar transmitters requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability programs.

Supply support for MRF6VP21KHR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-voltage silicon and GaN transistors for industrial, medical, and aerospace applications.

The MRF6VP21KHR6 belongs to Freescale's MRF6V family of high-power lateral MOSFETs, engineered specifically for ruggedized pulsed RF amplification in demanding environments where reliability, thermal stability, and load mismatch tolerance are critical.

FAQ

What is the maximum continuous drain current rating for the MRF6VP21KHR6?

The MRF6VP21KHR6 does not specify a maximum continuous drain current (I_D) rating because it is optimized for pulsed operation. Instead, its safe operating area is defined by DC and pulsed SOA curves in the datasheet, with maximum junction temperature limited to 225°C. For continuous-wave use, thermal design must ensure case temperature remains ≤80°C to maintain Z_θJC = 0.03°C/W and prevent electromigration failure. The MRF6VP21KHR6 is rated for 50 V_DD and supports I_DQ = 150 mA quiescent current in functional test conditions.

Does the MRF6VP21KHR6 require external gate protection diodes?

No, the MRF6VP21KHR6 integrates ESD protection meeting HBM Class 2 (≥2 kV), Machine Model Class A, and CDM Class IV standards, eliminating the need for external gate protection diodes in typical PCB layouts. This built-in protection is validated per JESD22-A114, JESD22-A115, and JESD22-C101, and is sufficient for handling assembly and handling ESD events. The MRF6VP21KHR6 gate-source voltage rating of –6 V to +10 Vdc further supports robust operation without clamping circuits in properly biased push-pull configurations.

Can the MRF6VP21KHR6 be operated in single-ended mode?

The MRF6VP21KHR6 is explicitly designed for push-pull operation and is not characterized or recommended for single-ended use. Its pinout, thermal structure, and internal layout assume balanced drive and load conditions - using only one side risks asymmetric heating, degraded efficiency, and premature failure. All published performance data (24 dB gain, 67.5% efficiency, 10:1 VSWR) applies strictly to the dual-gate, push-pull configuration. The MRF6VP21KHR6 datasheet states "PART IS PUSH–PULL" and provides no single-ended SOA or matching data.

What is the recommended gate bias voltage for Class C operation with the MRF6VP21KHR6?

For Class C operation, the MRF6VP21KHR6 leverages its extended negative gate-source voltage range (–6 Vdc minimum) to achieve deeper cutoff and higher efficiency. Typical gate quiescent voltage (V_GS(Q)) is 1.5–3.5 Vdc at 50 V_DD and 150 mA I_DQ, but Class C tuning uses negative V_GS bias (e.g., –2 to –4 Vdc) to reduce conduction angle. The MRF6VP21KHR6's greater negative V_GS range improves linearity control and harmonic suppression in pulsed amplifiers - verified in Freescale's AN1955 thermal methodology and EB212 impedance application notes.

Is the MRF6VP21KHR6 RoHS compliant and lead-free?

Yes, the MRF6VP21KHR6 is RoHS compliant and lead-free, as confirmed in the official Freescale Semiconductor datasheet (Rev. 4, April 2010). The "R6" suffix denotes tape-and-reel packaging (150 units per 56 mm, 13-inch reel) and aligns with Freescale's lead-free manufacturing standard. All solderable terminations meet JEDEC J-STD-020 moisture sensitivity level (MSL) requirements, and the NI-1230 ceramic/metal package contains no restricted substances above RoHS threshold limits. The MRF6VP21KHR6 complies with EU Directive 2011/65/EU and subsequent amendments.