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NXP Semiconductors MRF6VP2600HR5
- Part No.:
- MRF6VP2600HR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230
- Datasheet:
-
MRF6VP2600HR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:3,365
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Product details
Overview
MRF6VP2600HR5 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband push-pull amplifier stages in broadcast transmitters. It operates from 2–500 MHz, delivers 600 W peak pulsed or 125 W average OFDM output at 225 MHz, achieves 25 dB power gain and 28.5% drain efficiency under DVB-T conditions, and withstands 10:1 VSWR at 600 W peak.
For engineers reviewing the MRF6VP2600HR5 datasheet, MRF6VP2600HR5 pinout, MRF6VP2600HR5 application, or MRF6VP2600HR5 equivalent, this page provides verified package mapping, confirmed push-pull terminal roles, validated thermal resistance (0.20 °C/W), real-world DVB-T ACPR (–61 dBc), and direct alternative part comparisons for broadcast RF final-stage design.
Technical Context
This device is an unmatched, dual-gate/dual-drain RF power transistor optimized for Class AB/C broadband amplification in VHF/UHF broadcast infrastructure. Its lateral LDMOS structure supports 50 V DC operation, 225°C junction temperature rating, and integrated ESD protection per HBM Class 2, CDM Class IV.
The MRF6VP2600HR5 is characterized with series-equivalent large-signal impedance parameters (e.g., Zsource = 1.42 + j8.09 Ω at 225 MHz) and qualified for CW operation with adequate heatsinking. It is explicitly specified for push-pull configuration, with separate RFinA/VGSA, RFinB/VGSB, RFoutA/VDSA, and RFoutB/VDSB terminals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2–500 MHz - Supports full VHF/UHF broadcast bands including 88–108 MHz FM, 225 MHz DVB-T, and 352.2 MHz ISM. |
| Output Power | 600 W peak pulsed (225 MHz, 100 μs, 20% duty); 125 W avg. OFDM (225 MHz, 7.61 MHz BW, PAR 9.3 dB). |
| Power Gain | 25 dB typical (225 MHz DVB-T); 24.5 dB (88–108 MHz); 22 dB (352.2 MHz) - Enables single-stage high-efficiency final amplification. |
| Drain Efficiency | 28.5% (DVB-T avg.), 59% (pulsed), 74% (88–108 MHz CW) - Directly impacts thermal load and power supply sizing in transmitter PA stages. |
| VSWR Tolerance | 10:1 at 600 W peak, 225 MHz - Allows robust operation into mismatched antenna loads without damage or gain collapse. |
| Junction Temp | 225°C max - Enables high-power density layout with conservative derating for >10-year MTTF in cooled enclosures. |
| Thermal Resistance | 0.20 °C/W (junction-to-case, 125 W CW @ 225 MHz) - Dictates minimum heatsink thermal resistance required for safe continuous operation. |
Pinout & Package
Package: NI-1230 (Case 375D-05, Style 1), isolated ceramic/metal flange-mount with solderable baseplate. Thermal path optimized for low-impedance mounting to copper heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFinA / VGSA | Gate A input | RF input terminal for first transistor half in push-pull pair; requires matched 50 Ω source impedance and gate bias network. |
| 2 - RFinB / VGSB | Gate B input | RF input terminal for second transistor half; enables balanced drive and common-mode rejection in differential configurations. |
| 3 - RFoutA / VDSA | Drain A output | High-power RF output node for first half; connects to output matching network and balun primary winding. |
| 4 - RFoutB / VDSB | Drain B output | High-power RF output node for second half; used with terminal 3 for center-tapped or push-pull transformer coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Push-pull optimized architecture | Separate gate and drain terminals enable true complementary drive, minimizing even-order distortion in broadcast amplifiers. |
| 10:1 VSWR ruggedness | Guaranteed survival at 600 W peak into severe antenna mismatches - eliminates need for external circulators in many FM/TV transmitters. |
| Integrated ESD protection | HBM Class 2 (≥2 kV), CDM Class IV - reduces handling sensitivity and improves assembly yield without external TVS diodes. |
| Wideband impedance characterization | Published Zsource/Zload data at 88–108 MHz, 225 MHz, and 352.2 MHz - accelerates matching network design with minimal EM iteration. |
| Negative VGS range extension | –6.0 V gate rating - supports deep Class C biasing for higher efficiency in narrowband applications like FM broadcasting. |
Applications
| FM Broadcast Transmitter | DVB-T Terrestrial Transmitter |
|---|---|
|
Use Scenario: Final-stage amplifier in 88–108 MHz high-power FM broadcast transmitters delivering 500–1000 W ERP. IC Role / Device Role / Timing Role: Dual-device push-pull RF power stage operating in Class AB, driven by broadband matching networks. Use Value: Delivers 74% drain efficiency at 600 W CW, reducing cooling requirements and AC power consumption versus older LDMOS alternatives. |
Use Scenario: OFDM-based digital TV transmitter final amplifier for 225 MHz band, supporting 8K mode, 64-QAM modulation. IC Role / Device Role / Timing Role: Average-power-rated RF power transistor configured in balanced push-pull topology with precise gate bias control. Use Value: Achieves –61 dBc ACPR at 125 W avg. output, meeting ETSI EN 300 744 spectral mask requirements without excessive back-off. |
| VHF/UHF ISM Amplifier | Multi-band Broadcast Exciter |
|
Use Scenario: Solid-state amplifier for industrial heating or plasma generation at 352.2 MHz, requiring stable CW output up to 600 W. IC Role / Device Role / Timing Role: High-efficiency broadband RF power device operated in grounded-gate configuration with active bias stabilization. Use Value: Maintains 68% drain efficiency at 352.2 MHz, enabling compact air-cooled designs where liquid cooling is impractical. |
Use Scenario: Reconfigurable exciter module covering multiple broadcast bands (88–108 MHz, 225 MHz, 352.2 MHz) via switchable matching networks. IC Role / Device Role / Timing Role: Single-footprint RF power transistor used across frequency bands with retuned external components per band. Use Value: Eliminates need for multiple discrete PA devices - one MRF6VP2600HR5 supports all three major broadcast bands with proven Zsource/Zload data. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61K25H | Higher P1dB (610 W vs. 600 W pulsed), lower gain (23.5 dB), same NI-1230 package and 50 V rating. | Better suited for ultra-high-reliability FM broadcast where margin over PEP is critical; slightly reduced small-signal linearity. | Select when prioritizing absolute ruggedness and long-term MTTF over peak gain in fixed-frequency FM systems. |
| PD85015-E | Single-ended (not push-pull), 15 W avg. capability, SO-8 package - not pin-compatible; requires different PCB layout and biasing. | Targeted at low-power UHF repeaters or lab-grade signal generators, not broadcast final stages. | Consider only for prototyping or non-broadcast applications where cost and footprint outweigh power requirements. |
Compared with MRFE6VP61K25H and PD85015-E, the MRF6VP2600HR5 uniquely combines push-pull terminal separation, 600 W pulsed capability, and published multi-band impedance data - making it the only direct option for production-ready, multi-band broadcast final amplifiers requiring no layout redesign.
Availability
MRF6VP2600HR5 is available at Aetrix Electronics and suitable for FM broadcast transmitters, DVB-T terrestrial transmitters, VHF/UHF ISM amplifiers, and multi-band broadcast exciters requiring stable component supply and traceable sourcing.
Supply support for MRF6VP2600HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and manufacturing continuity for legacy Freescale RF LDMOS products.
The MRF6VP2600HR5 belongs to the MRF6VP family of high-voltage (50 V) broadband RF power transistors engineered specifically for broadcast infrastructure, emphasizing VSWR ruggedness, multi-band impedance data, and push-pull integration.
FAQ
What is the maximum continuous drain current rating for the MRF6VP2600HR5?
The MRF6VP2600HR5 does not specify a maximum continuous drain current (ID) as a standalone parameter. Instead, its safe operating area is defined by voltage, power, and thermal limits - with maximum junction temperature of 225°C and thermal resistance of 0.20 °C/W. At 50 V DC and 125 W average output, quiescent drain current is 2600 mA, but actual ID varies dynamically with RF drive level and modulation profile. The MRF6VP2600HR5 must be operated within the DC Safe Operating Area curve shown in Figure 5 of its datasheet.
Is the MRF6VP2600HR5 pin-compatible with the MRF6VP2600HR6?
Yes, the MRF6VP2600HR5 and MRF6VP2600HR6 share identical pinout, package (NI-1230), and terminal functions - both feature RFinA/VGSA (pin 1), RFinB/VGSB (pin 2), RFoutA/VDSA (pin 3), and RFoutB/VDSB (pin 4). The 'R5' and 'R6' suffixes denote tape-and-reel packaging variants (150 units per reel for R5; 150 units per 56 mm, 13-inch reel for R6), not functional or electrical differences. The MRF6VP2600HR5 is fully interchangeable with the MRF6VP2600HR6 in existing designs.
Does the MRF6VP2600HR5 require external gate protection diodes?
No, the MRF6VP2600HR5 integrates ESD protection rated to HBM Class 2 (≥2 kV), Machine Model Class A, and CDM Class IV - sufficient for standard PCB handling and assembly. External gate protection diodes are not required in properly designed circuits with controlled gate bias sequencing and RF input filtering. However, transient suppression remains recommended on DC supply lines and at the RF input if the system operates in electrically noisy environments such as broadcast towers.
Can the MRF6VP2600HR5 be used in single-ended configurations?
The MRF6VP2600HR5 is explicitly designed and characterized for push-pull operation, with separate gate and drain terminals for each half of the device. While it is physically possible to use only one side (e.g., pins 1 and 3), doing so forfeits the benefits of balanced operation - including improved harmonic suppression, higher effective output power, and inherent common-mode noise rejection. Freescale/NXP does not characterize or guarantee performance in single-ended mode, and the MRF6VP2600HR5 datasheet provides no single-ended impedance data or test conditions.
What is the recommended gate bias voltage range for Class AB operation of the MRF6VP2600HR5?
For Class AB operation at 50 V drain supply and 2600 mA quiescent drain current, the MRF6VP2600HR5 specifies a gate quiescent voltage (VGS(Q)) range of 1.5–3.5 Vdc, with a typical value of 2.7 Vdc. This bias point is measured in functional test under push-pull conditions. Stable operation requires a low-impedance, temperature-compensated gate bias network - typically using a resistive divider with thermistor feedback - to maintain constant IDQ across ambient temperature swings. The MRF6VP2600HR5 gate threshold voltage (VGS(th)) is 1.0–3.0 Vdc, confirming suitability for low-voltage bias control.
MRF6VP2600HR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 225MHz
- Gain:
- 25dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 2.6 A
- Power - Output:
- 125W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230
MRF6VP2600HR5 FAQ
1.How can I place an order for MRF6VP2600HR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6VP2600HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6VP2600HR5 reliable?
The price and inventory of MRF6VP2600HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP2600HR5 is usually 5 days.
3.What payment methods are accepted for MRF6VP2600HR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP2600HR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6VP2600HR5?
MRF6VP2600HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6VP2600HR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6VP2600HR5?
For technical support, including MRF6VP2600HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP2600HR5 requirements.
6.How does Aetrix verify that MRF6VP2600HR5 is sourced from the original manufacturer or authorized distributors?
All MRF6VP2600HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP2600HR5 meets industry standards.
7.What is the process for return or replacement of MRF6VP2600HR5?
All MRF6VP2600HR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP2600HR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6VP2600HR5 part is unused and in its original packaging.
Return procedure for MRF6VP2600HR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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