NXP Semiconductors MRF6VP2600HR6

Overview

MRF6VP2600HR6 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband push-pull amplifier stages in broadcast transmitters. It operates from 2–500 MHz, delivers 600 W CW output at 352.2 MHz (50 V, 150 mA IDQ), achieves 22 dB power gain and 68% drain efficiency, and is qualified for 50 VDD operation with integrated ESD protection.

For engineers reviewing the MRF6VP2600HR6 datasheet, MRF6VP2600HR6 pinout, MRF6VP2600HR6 application, or MRF6VP2600HR6 equivalent, this page provides verified device identity, push-pull circuit role, thermal resistance (0.14 °C/W at 352.2 MHz), VSWR ruggedness (10:1 @ 600 W peak), and OFDM/DTV performance metrics critical for broadcast RF final-stage design.

Technical Context

This unmatched RF power transistor uses lateral LDMOS architecture optimized for wideband Class AB/C operation in high-power broadcast amplifiers. Its dual-gate/dual-drain structure supports balanced push-pull configurations with series-equivalent large-signal impedance characterization at 225 MHz, 352.2 MHz, and 88–108 MHz test frequencies.

The device features a maximum junction temperature of 225°C, 0.14 °C/W thermal resistance (junction-to-case) under 352.2 MHz CW conditions, and is characterized for DVB-T OFDM (125 W avg., 28.5% efficiency, –61 dBc ACPR) and pulsed operation (600 W peak, 59% efficiency).

Key Specifications

Pinout & Package

Package: NI-1230 (Case 375D-05, Style 1), ceramic/metal hermetic package with solderable baseplate for low-thermal-resistance mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6VP2600HR6, the MRFE6VP6600HR5 offers higher voltage tolerance but reduced UHF efficiency, while the BLF6G26LS-600P delivers comparable UHF performance in a non-hermetic package requiring external ESD hardening and revised thermal management.

Availability

MRF6VP2600HR6 is available at Aetrix Electronics and suitable for UHF broadcast transmitters, VHF FM amplifiers, DVB-T OFDM systems, and pulsed radar applications requiring stable component supply and long-lifecycle support.

Supply support for MRF6VP2600HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure and broadcast markets.

The MRF6VP2600HR6 belongs to Freescale's MRF6V family of broadband LDMOS transistors, engineered specifically for high-efficiency, high-ruggedness final-stage amplification in terrestrial television and radio broadcasting systems.

FAQ

What is the maximum continuous drain current rating for the MRF6VP2600HR6?

The MRF6VP2600HR6 does not specify a maximum continuous drain current (ID) rating independent of thermal conditions. Instead, its safe operating area is defined by junction temperature (225°C max), case temperature (150°C), and thermal resistance (0.14 °C/W at 352.2 MHz). Under typical 352.2 MHz CW operation at 600 W output, quiescent drain current is 150 mA; at 225 MHz DVB-T operation, IDQ is 2600 mA. Actual current must be validated per thermal design and bias point.

Does the MRF6VP2600HR6 require external gate protection circuits?

The MRF6VP2600HR6 includes integrated ESD protection rated to HBM Class 2 (≥2 kV), Machine Model Class A, and CDM Class IV. While this protects against handling ESD, external gate protection (e.g., series resistors, clamp diodes) is still recommended in production systems to suppress RF feedback, prevent parasitic oscillation, and limit transient gate currents during mismatch events - especially in broadband push-pull configurations where gate drive integrity is critical for MRF6VP2600HR6 reliability.

Can the MRF6VP2600HR6 be used in single-ended amplifier configurations?

The MRF6VP2600HR6 is explicitly designed for push-pull operation, as confirmed by its dual-gate/dual-drain pinout, characterization data (e.g., Zsource/Zload measured "gate-to-gate" and "drain-to-drain"), and feature statements. Freescale documentation does not provide single-ended impedance data, bias recommendations, or performance curves for single-ended use. Using MRF6VP2600HR6 in single-ended mode risks unbalanced thermal loading, degraded linearity, and potential instability - it is not supported or characterized for that topology.

What is the thermal resistance junction-to-case value for the MRF6VP2600HR6 at 225 MHz?

At 225 MHz, under CW conditions (125 W output, 50 VDD, IDQ = 2600 mA, case temperature 99°C), the MRF6VP2600HR6 has a thermal resistance (RθJC) of 0.20 °C/W. This value is distinct from the 0.14 °C/W specified at 352.2 MHz (610 W, case temp 64°C) and 0.16 °C/W at 88–108 MHz (610 W, case temp 81°C), reflecting frequency-dependent thermal performance due to varying power dissipation profiles and measurement conditions.

Is the MRF6VP2600HR6 suitable for 5G base station applications?

The MRF6VP2600HR6 is not suitable for 5G base station applications. Its 2–500 MHz frequency range excludes all 5G NR bands (n1/n3/n7/n28/n41/n77/n78/n79), which operate from 600 MHz to 40 GHz. Additionally, its 352.2 MHz and 225 MHz characterization, OFDM modulation support for DVB-T (not 5G NR waveforms), and lack of envelope tracking or digital pre-distortion interface make MRF6VP2600HR6 incompatible with 5G infrastructure requirements.