NXP Semiconductors MRF6VP3450HR5

Overview

MRF6VP3450HR5 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband push-pull amplifier operation in 50 V analog/digital TV transmitters. It delivers 450 W PEP at 470–860 MHz with 22 dB gain and 44% drain efficiency, and handles 90 W average DVB-T OFDM output at 860 MHz with –62 dBc ACPR.

For engineers reviewing the MRF6VP3450HR5 datasheet, MRF6VP3450HR5 pinout, MRF6VP3450HR5 application, or MRF6VP3450HR5 equivalent, this device requires attention to its 10:1 VSWR ruggedness, series-equivalent impedance matching, dual-gate/dual-drain push-pull configuration, and thermal management at TJ = 225°C junction limit.

Technical Context

This device operates as a high-power RF transistor in common-source configuration within balanced push-pull amplifier stages. Its internal input matching simplifies external network design, while characterized series-equivalent large-signal impedances (e.g., Zsource = 2.81 – j1.88 Ω at 470 MHz) enable precise broadband matching.

It supports both pulsed CW (520 W P1dB, 50 μs/2.5%) and continuous large-signal modes (450 W PEP, 90 W avg.), with ESD protection rated Class 1B HBM and qualified for 50 VDD operation. The NI-1230 package features isolated gate and drain terminals optimized for RF grounding and thermal dissipation at TC = 150°C.

Key Specifications

Pinout & Package

Package: NI-1230 (Case 375D-05, Style 1), ceramic/metal flange-mount with integral heat slug. Designed for low-inductance RF grounding and high-power thermal transfer via case contact.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP6300HR5 and PD85008S, the MRF6VP3450HR5 uniquely balances 450 W PEP, 470–860 MHz broadband coverage, 10:1 VSWR tolerance, and 225°C junction rating - making it irreplaceable for high-reliability UHF broadcast final stages without redesign.

Availability

MRF6VP3450HR5 is available at Aetrix Electronics and suitable for UHF digital television transmitters, public safety repeaters, STL links, and cable headend amplifiers requiring stable component supply and long-term lifecycle support.

Supply support for MRF6VP3450HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support legacy LDMOS RF power transistors for broadcast and industrial applications.

The MRF6VP3450HR5 belongs to the MRF6VP3x family of high-voltage (up to 110 VDS), high-efficiency lateral MOSFETs engineered specifically for broadband UHF TV transmitter final stages and demanding RF infrastructure applications.

FAQ

What is the maximum continuous drain voltage rating for the MRF6VP3450HR5?

The MRF6VP3450HR5 has a maximum drain-source voltage rating of +110 VDC and –0.5 VDC. This 110 V rating enables operation at 50 V supply with substantial headroom for transient voltage spikes and switching overshoot in high-power RF amplifier designs. The MRF6VP3450HR5 must never be operated beyond these absolute maximum limits to prevent irreversible breakdown.

Does the MRF6VP3450HR5 require external input matching networks?

No - the MRF6VP3450HR5 is internally input matched, eliminating the need for discrete gate-matching components in most standard 50 Ω system designs. However, fine-tuning may still be required for optimal broadband performance, especially when operating near band edges or under specific load conditions. The MRF6VP3450HR5 datasheet provides series-equivalent source impedances to guide such adjustments.

Can the MRF6VP3450HR5 be used in single-ended configurations?

The MRF6VP3450HR5 is explicitly designed and characterized for push-pull operation, with pinout and thermal layout optimized for balanced drive. While functional in single-ended mode, doing so forfeits specified performance (e.g., IMD, efficiency, VSWR tolerance) and violates the intended use case documented in the MRF6VP3450HR5 datasheet. NXP recommends using it strictly in push-pull per design guidelines.

What is the thermal resistance from junction to case for the MRF6VP3450HR5 at 90 W CW operation?

At 90 W continuous wave operation with case temperature maintained at 80°C, the MRF6VP3450HR5 exhibits a junction-to-case thermal resistance (RθJC) of 0.27°C/W. This value directly determines the required heatsink thermal resistance to maintain junction temperature ≤225°C - for example, with 50°C ambient and 2 m/s airflow, a heatsink ≤0.45°C/W is necessary for reliable long-term operation of the MRF6VP3450HR5.

Is the MRF6VP3450HR5 RoHS compliant?

Yes, the MRF6VP3450HR5 is RoHS compliant, meeting EU Directive 2011/65/EU requirements for restriction of hazardous substances. This includes lead-free terminations and compliant packaging materials. The MRF6VP3450HR5 is supplied in tape-and-reel format (R5 suffix = 50 units per 56 mm, 13-inch reel), consistent with automated SMT assembly processes.