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NXP Semiconductors MRF6VP3450HR6
- Part No.:
- MRF6VP3450HR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230
- Datasheet:
-
MRF6VP3450HR6.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:9,790
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Product details
Overview
MRF6VP3450HR6 from Freescale Semiconductor is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband large-signal common-source amplifier applications in 50 V analog/digital TV transmitters (470–860 MHz). It delivers 450 W PEP output with 22 dB power gain and 44% drain efficiency in two-tone operation, and handles 10:1 VSWR at all phase angles under 50 Vdc, 860 MHz.
For engineers reviewing the MRF6VP3450HR6 datasheet, MRF6VP3450HR6 pinout, MRF6VP3450HR6 application, or MRF6VP3450HR6 equivalent, key selection criteria include its push-pull configuration support, internal input matching, 225°C maximum junction temperature, RoHS-compliant NI-1230 package, and verified DVB-T OFDM performance at 90 W avg. output with –62 dBc ACPR.
Technical Context
This device operates as a high-power RF transistor in Class AB or Class C amplifier stages, optimized for broadband 470–860 MHz operation with series-equivalent large-signal impedance characterization. Its internally input-matched design eliminates external gate matching networks in standard 50 Ω systems.
The MRF6VP3450HR6 is rated for 50 Vdc drain supply and features integrated ESD protection (HBM Class 1B), a –6.0 to +10 Vdc gate-source voltage range, and thermal resistance of 0.27°C/W (junction-to-case, 90 W CW). It is qualified for push-pull operation and supports negative gate bias for improved Class C linearity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 470–860 MHz - Validated for full-band DVB-T OFDM and two-tone operation across UHF TV broadcast band. |
| Output Power (PEP) | 450 W - Achieved at 50 Vdc, 1400 mA IDQ, 470–860 MHz, enabling single-device 500 W-class transmitter stages. |
| Power Gain | 22 dB - Measured in two-tone test fixture; enables compact driver-amplifier architectures without intermediate gain stages. |
| Drain Efficiency | 44% - At 450 W PEP, reducing thermal load and DC power supply sizing requirements in high-duty-cycle applications. |
| ACPR @ ±4 MHz | –62 dBc - Measured on 860 MHz DVB-T OFDM signal (8K/64-QAM, 7.61 MHz BW), meeting stringent spectral mask compliance. |
| Junction Temp. Max | 225°C - Enables high-reliability operation under sustained high-Pout conditions; MTTF calculable via Freescale tool. |
| VSWR Tolerance | 10:1 @ all phase angles - Allows direct connection to antenna systems without circulator or isolator in robust broadcast designs. |
Pinout & Package
Package: NI-1230 (Case 375D-05, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heatsink tab. Dimensions per Freescale drawing; compatible with standard RF power heatsinking practices.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFinA/VGSA) | Gate A input | Input terminal for first transistor half in push-pull pair; internally matched to ~50 Ω at 470–860 MHz. |
| 2 (RFinB/VGSB) | Gate B input | Input terminal for second transistor half; symmetrical with Pin 1 for balanced drive in push-pull configuration. |
| 3 (RFoutA/VDSA) | Drain A output | High-power RF output node for first half; rated for 110 VDS max and 450 W CW dissipation. |
| 4 (RFoutB/VDSB) | Drain B output | High-power RF output node for second half; electrically isolated from Pin 3 but thermally coupled via shared case. |
Key Features
| Feature | Design Value |
|---|---|
| Internally input matched | Eliminates discrete gate matching networks in 50 Ω systems, reducing PCB area and tuning complexity. |
| Push-pull optimized | Pinout and thermal layout support symmetrical dual-gate/dual-drain operation for even harmonic cancellation and higher linearity. |
| Extended VGS range | –6.0 to +10 Vdc rating enables deep Class C biasing for high-efficiency digital modulation schemes. |
| ESD protection | HBM Class 1B, MM Class B, CDM Class IV - Reduces handling sensitivity and improves manufacturing yield. |
| Tape-and-reel packaging | R6 suffix = 150 units per 56 mm, 13-inch reel - Supports automated SMT placement in high-volume broadcast amplifier production. |
Applications
| UHF Digital TV Transmitter | Headend CATV Amplifier |
|---|---|
Use Scenario: Final-stage power amplification in terrestrial DVB-T broadcast transmitters operating at 860 MHz with 8K/64-QAM OFDM signals. IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor in push-pull Class AB final amplifier stage. Use Value: Delivers 90 W average output with –62 dBc ACPR and 28% drain efficiency, meeting ETSI EN 300 744 spectral masks without external linearization. |
Use Scenario: Upstream/downstream broadband amplification in cable headend systems requiring 470–860 MHz coverage and high PEP capability. IC Role / Device Role / Timing Role: Dual-channel RF power MOSFET used in balanced push-pull configuration for composite triple-play signal amplification. Use Value: Handles 450 W PEP with 44% efficiency and –29 dBc IM3, supporting multi-carrier DOCSIS 3.1 and DAA architectures without intermodulation distortion. |
| Broadband RF Test Fixture | High-Reliability Broadcast Exciter |
Use Scenario: Reference amplifier stage in calibrated RF production test systems for UHF power device validation. IC Role / Device Role / Timing Role: Characterized DUT in Freescale's standardized broadband test fixture (Fig. 2) with defined microstrip impedances and balun networks. Use Value: Provides traceable, repeatable 470–860 MHz gain/efficiency/linearity data using documented Zsource/Zload values (e.g., 3.90+j2.09 Ω at 860 MHz). |
Use Scenario: Solid-state exciter module in mission-critical broadcast infrastructure where MTTF > 1 million hours is required at 90 W avg. output. IC Role / Device Role / Timing Role: Primary RF power device operating at TJ = 150°C with validated electromigration lifetime modeling. Use Value: Junction temperature derating supported by Freescale's MTTF calculator; achieves >10⁶ hour reliability at 28% efficiency, 50 Vdc, 90 W avg. per Freescale Rev. 4 data. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP3450HSR6 | Same die, different package: NI-1230S (Case 375E-04); lower thermal resistance (0.25°C/W vs. 0.27°C/W at 90 W CW). | Preferred for higher-power pulsed operation (450 W CW, 50 μs/2.5% duty cycle) due to enhanced thermal path. | Select HSR6 when thermal management is critical and board space allows larger flange footprint. |
| MRFE6VP6300HR5 | Higher P1dB (630 W vs. 520 W), same 50 V operation, but wider bandwidth (1.8–2.2 GHz); not validated below 470 MHz. | Not suitable for UHF TV band; intended for cellular/LTE base station applications above 1.8 GHz. | Choose only if migrating to higher-frequency bands; not a functional substitute for MRF6VP3450HR6 in 470–860 MHz systems. |
Compared with MRF6VP3450HSR6, the MRF6VP3450HR6 offers identical RF performance but slightly higher thermal resistance-acceptable for continuous-wave TV broadcast use. Compared with MRFE6VP6300HR5, it provides proven UHF band linearity and efficiency but lacks sub-470 MHz coverage and has lower peak power capability.
Availability
MRF6VP3450HR6 is available at Aetrix Electronics and suitable for UHF digital TV transmitters, CATV headend amplifiers, RF production test fixtures, and high-reliability broadcast exciters requiring stable component supply and long-lifecycle support.
Supply support for MRF6VP3450HR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in LDMOS technology for broadcast, industrial, and communications infrastructure.
The MRF6VP3450HR6 belongs to Freescale's MRF6VP3x family of broadband RF power MOSFETs, engineered specifically for high-efficiency, high-linearity UHF television transmission systems operating from 470 to 860 MHz.
FAQ
What is the maximum continuous drain current rating for the MRF6VP3450HR6?
The MRF6VP3450HR6 does not specify a maximum continuous drain current (ID) rating in its datasheet. Instead, it defines safe operating limits via junction temperature (225°C max), case temperature (150°C), and thermal resistance (0.27°C/W). Actual current depends on bias point: typical quiescent IDQ is 1400 mA at 50 Vdc, but pulsed operation supports higher peak currents. The device must be operated within its SOA curve (Fig. 5) to avoid secondary breakdown.
Does the MRF6VP3450HR6 require external input matching networks?
No, the MRF6VP3450HR6 is internally input matched for ease of use in 50 Ω systems across 470–860 MHz. Freescale's datasheet confirms this in the Features section and validates it through measured input return loss (–4 dB typical at 860 MHz). External matching may still be needed for narrowband optimization or impedance transformation outside the specified band, but is not required for basic broadband operation.
Can the MRF6VP3450HR6 be used in single-ended configurations?
The MRF6VP3450HR6 is explicitly designed for push-pull operation, as stated in the Features section and confirmed by its dual-gate/dual-drain pinout (Pins 1/2 and 3/4). While it can be operated single-ended on one side, doing so forfeits harmonic cancellation, reduces power capability, and violates the functional test conditions used to characterize Gps, ηD, and ACPR. Freescale's test data assumes balanced push-pull use.
What is the gate threshold voltage range for the MRF6VP3450HR6?
The gate threshold voltage (VGS(th)) for the MRF6VP3450HR6 is specified as 1.0–2.5 Vdc (typical 1.6 Vdc) at VDS = 10 Vdc and ID = 320 μAdc. This low threshold enables reliable turn-on with standard ±5 V gate drivers and supports precise Class AB biasing via adjustable VGS(Q) (2.0–3.5 Vdc typical at IDQ = 1400 mA).
How is the MRF6VP3450HR6 protected against electrostatic discharge?
The MRF6VP3450HR6 incorporates integrated ESD protection rated per industry standards: Human Body Model (HBM) Class 1B (≥500 V), Machine Model (MM) Class B (≥200 V), and Charge Device Model (CDM) Class IV (≥1000 V). These ratings are verified per JESD22-A114, JESD22-A115, and JESD22-C101, ensuring robustness during handling and assembly without requiring additional external protection diodes.
MRF6VP3450HR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 860MHz
- Gain:
- 22.5dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.4 A
- Power - Output:
- 90W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230
MRF6VP3450HR6 FAQ
1.How can I place an order for MRF6VP3450HR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6VP3450HR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6VP3450HR6 reliable?
The price and inventory of MRF6VP3450HR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP3450HR6 is usually 5 days.
3.What payment methods are accepted for MRF6VP3450HR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP3450HR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6VP3450HR6?
MRF6VP3450HR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6VP3450HR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6VP3450HR6?
For technical support, including MRF6VP3450HR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP3450HR6 requirements.
6.How does Aetrix verify that MRF6VP3450HR6 is sourced from the original manufacturer or authorized distributors?
All MRF6VP3450HR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP3450HR6 meets industry standards.
7.What is the process for return or replacement of MRF6VP3450HR6?
All MRF6VP3450HR6 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP3450HR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6VP3450HR6 part is unused and in its original packaging.
Return procedure for MRF6VP3450HR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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