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NXP Semiconductors MRF6VP3450HSR5
- Part No.:
- MRF6VP3450HSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230S
- Datasheet:
-
MRF6VP3450HSR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:7,864
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Product details
Overview
MRF6VP3450HSR5 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband push-pull amplifier operation in 470–860 MHz television transmitter systems. It delivers 450 W PEP at 22 dB gain and 44% drain efficiency under 50 Vdc bias, with 90 W average output in DVB-T OFDM at 860 MHz and –62 dBc ACPR.
For engineers reviewing the MRF6VP3450HSR5 datasheet, MRF6VP3450HSR5 pinout, MRF6VP3450HSR5 application, or MRF6VP3450HSR5 equivalent, this device requires attention to its dual-gate/dual-drain configuration, 10:1 VSWR ruggedness, series-equivalent impedance matching, thermal resistance of 0.25°C/W at 450 W CW, and RoHS-compliant NI-1230S package.
Technical Context
This device operates as a high-power RF transistor in common-source, push-pull configurations, characterized with series-equivalent large-signal impedance parameters for 470–860 MHz broadband amplification. Its internal input matching simplifies external network design, while integrated ESD protection meets JESD22-A114 Class 1B, A115 Class B, and C101 Class IV standards.
The MRF6VP3450HSR5 supports both pulsed (50 μs, 2.5% duty cycle) and continuous-wave operation up to 225°C junction temperature, with validated performance at 50 Vdc supply, 1400 mA quiescent drain current, and capability to withstand 10:1 VSWR at all phase angles - critical for broadcast transmitter front-end robustness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 470–860 MHz - validated for DVB-T OFDM and two-tone operation across full UHF TV band |
| Output Power (PEP) | 450 W - deliverable in pulsed mode (50 μs, 2.5% duty) with 22 dB gain and 44% efficiency |
| Output Power (Avg.) | 90 W - sustainable CW average output for DVB-T OFDM signals with 10 dB PAR |
| Drain Efficiency | 44% (two-tone), 28% (DVB-T OFDM) - enables thermally constrained 50 Vdc broadcast amplifier designs |
| VSWR Tolerance | 10:1 at all phase angles, 860 MHz - ensures survivability under mismatched antenna conditions |
| Junction Temperature | 225°C max - supports high-reliability operation with MTTF calculable via NXP's online tool |
| Thermal Resistance | 0.25°C/W (case-to-junction, 450 W CW) - mandates high-performance heatsinking for sustained output |
| ESD Rating | HBM Class 1B, MM Class B, CDM Class IV - provides built-in protection against handling-induced transients |
Pinout & Package
Package: NI-1230S (Case 375E-04, Style 1), ceramic/metal flange-mount with solderable baseplate and isolated leads. Thermal path optimized for high-power RF PCB mounting with direct case-to-heatsink interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFinA / VGSA) | Gate terminal A | Input control node for first transistor half; requires matched gate drive in push-pull configuration |
| 2 (RFinB / VGSB) | Gate terminal B | Input control node for second transistor half; symmetrical with Pin 1 for balanced drive |
| 3 (RFoutA / VDSA) | Drain terminal A | High-power RF output node A; connected to output balun or combiner in push-pull topology |
| 4 (RFoutB / VDSB) | Drain terminal B | High-power RF output node B; paired with Pin 3 for differential or parallel output synthesis |
Key Features
| Feature | Design Value |
|---|---|
| Internally input-matched | Reduces need for external gate matching networks; simplifies broadband 50 Ω system integration |
| Push-pull optimized architecture | Enables even-order harmonic cancellation and higher effective output power in balanced configurations |
| Extended negative VGS range | Supports stable Class C operation with deeper cutoff control for improved efficiency in pulsed modes |
| 10:1 VSWR ruggedness | Guarantees no damage or parametric shift during antenna detuning or fault conditions at full power |
| RoHS-compliant packaging | Meets global environmental compliance requirements without performance trade-offs in RF reliability |
Applications
| Analog/Digital TV Transmitter | DVB-T OFDM Broadcast Amplifier |
|---|---|
|
Use Scenario: Final-stage amplification in terrestrial UHF broadcast transmitters operating across 470–860 MHz. IC Role / Device Role / Timing Role: High-power RF power transistor in push-pull configuration delivering 450 W PEP output. Use Value: Enables single-device 90 W average DVB-T output with –62 dBc ACPR, meeting ETSI EN 300 744 spectral mask requirements. |
Use Scenario: Multi-carrier OFDM signal amplification for digital terrestrial television transmission. IC Role / Device Role / Timing Role: Lateral MOSFET operating at 50 Vdc, 1400 mA IDQ, driving 8K-mode 64-QAM signals. Use Value: Delivers 22.5 dB power gain and 28% drain efficiency at 860 MHz, minimizing thermal load in air-cooled cabinets. |
| UHF Bandwidth-Scalable Amplifier | Two-Tone Linear RF Power Stage |
|
Use Scenario: Broadband amplifier module supporting multiple regional TV channel plans within 470–860 MHz. IC Role / Device Role / Timing Role: Dual-gate/dual-drain RF transistor enabling frequency-agile final-stage design. Use Value: Maintains ≥21 dB gain and ≤–29 dBc IM3 across full band, eliminating need for band-switching networks. |
Use Scenario: High-linearity RF power stage for test equipment, lab amplifiers, or cable headend exciters. IC Role / Device Role / Timing Role: Common-source power device biased at 50 Vdc/1400 mA for two-tone PEP output. Use Value: Achieves 44% drain efficiency and –29 dBc third-order IMD at 450 W PEP, reducing AC power consumption and cooling demand. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP3450HR5 | Same die, NI-1230 (Case 375D-05) package; 0.27°C/W RθJC vs. 0.25°C/W for HSR5; identical electrical specs | Lower thermal performance margin; suited for lower-duty-cycle or forced-air cooled systems | Select MRF6VP3450HR5 only when board layout accommodates larger footprint and thermal budget permits higher junction rise |
| MRFE6VP6300H | Higher P1dB (630 W vs. 520 W), same 50 V operation, but rated for 225°C TJ and 0.19°C/W RθJC | Targeted at next-generation high-efficiency transmitters requiring >500 W PEP with improved thermal headroom | Choose MRFE6VP6300H when upgrading for higher output or extended lifetime under 450+ W sustained loads |
Compared with MRF6VP3450HSR5, the MRF6VP3450HR5 offers identical RF performance in a thermally less efficient package, while the MRFE6VP6300H extends peak power and thermal capability - making the HSR5 optimal for cost-sensitive, high-volume DVB-T transmitter deployments where 450 W PEP and 90 W avg. meet specification.
Availability
MRF6VP3450HSR5 is available at Aetrix Electronics and suitable for analog/digital TV transmitters, DVB-T OFDM broadcast amplifiers, and UHF broadband linear RF power stages requiring stable component supply and long-lifecycle support.
Supply support for MRF6VP3450HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support legacy RF LDMOS products including the MRF6VP series.
The MRF6VP3450HSR5 belongs to NXP's high-power RF LDMOS transistor family, engineered specifically for UHF broadcast infrastructure demanding ruggedness, broadband linearity, and proven field reliability in 24/7 transmitter operation.
FAQ
What is the maximum continuous drain current rating for the MRF6VP3450HSR5?
The MRF6VP3450HSR5 does not specify a maximum continuous drain current (ID) rating independent of thermal conditions. Instead, it is characterized at 1400 mA quiescent drain current (IDQ) under 50 Vdc bias for DVB-T and two-tone testing. Its safe operating area is defined by voltage, power, and junction temperature limits - with maximum junction temperature set at 225°C and thermal resistance of 0.25°C/W at 450 W CW. Actual usable ID depends on heatsink performance and ambient conditions.
Does the MRF6VP3450HSR5 require external gate matching networks?
No - the MRF6VP3450HSR5 is internally input-matched, meaning its gate impedance is pre-tuned to simplify integration into 50 Ω systems. This eliminates the need for discrete gate matching components in most broadband amplifier designs, though external stabilization or harmonic filtering may still be required depending on layout and application-specific linearity targets.
Can the MRF6VP3450HSR5 be used in single-ended configurations?
The MRF6VP3450HSR5 is explicitly designed and characterized for push-pull operation, with dual gate and dual drain terminals optimized for balanced drive and output. While electrically functional in single-ended mode, doing so forfeits specified performance - including IM3, ACPR, and efficiency - and voids guaranteed ruggedness ratings like 10:1 VSWR tolerance. NXP recommends using it only in push-pull per datasheet guidance.
What is the ACPR performance of the MRF6VP3450HSR5 in DVB-T applications?
The MRF6VP3450HSR5 achieves –62 dBc adjacent channel power ratio (ACPR) at ±4 MHz offset with 4 kHz measurement bandwidth, measured under DVB-T OFDM conditions: 860 MHz, 90 W average output, 8K mode, 64-QAM, and 10 dB PAR. This meets ETSI EN 300 744 spectral emission requirements for terrestrial digital TV transmitters.
Is the MRF6VP3450HSR5 lead-free and RoHS compliant?
Yes - the MRF6VP3450HSR5 is RoHS compliant and manufactured with lead-free terminations and packaging. This is explicitly stated in the Freescale (now NXP) datasheet Rev. 4, April 2010, and confirmed by its qualification per JEDEC J-STD-020 moisture sensitivity level (MSL) and JESD22 reliability standards.
MRF6VP3450HSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 860MHz
- Gain:
- 22.5dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.4 A
- Power - Output:
- 90W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230S
MRF6VP3450HSR5 FAQ
1.How can I place an order for MRF6VP3450HSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6VP3450HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6VP3450HSR5 reliable?
The price and inventory of MRF6VP3450HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP3450HSR5 is usually 5 days.
3.What payment methods are accepted for MRF6VP3450HSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP3450HSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6VP3450HSR5?
MRF6VP3450HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6VP3450HSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6VP3450HSR5?
For technical support, including MRF6VP3450HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP3450HSR5 requirements.
6.How does Aetrix verify that MRF6VP3450HSR5 is sourced from the original manufacturer or authorized distributors?
All MRF6VP3450HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP3450HSR5 meets industry standards.
7.What is the process for return or replacement of MRF6VP3450HSR5?
All MRF6VP3450HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP3450HSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6VP3450HSR5 part is unused and in its original packaging.
Return procedure for MRF6VP3450HSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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