NXP Semiconductors MRF6VP3450HSR6

Overview

MRF6VP3450HSR6 from NXP Semiconductors (formerly Freescale) is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband push-pull amplifier stages in 50 V analog/digital TV transmitters. It delivers 450 W PEP at 470–860 MHz, 22 dB power gain, and 44% drain efficiency under two-tone conditions, with robust 10:1 VSWR tolerance at 860 MHz.

For engineers reviewing the MRF6VP3450HSR6 datasheet, MRF6VP3450HSR6 pinout, MRF6VP3450HSR6 application, or MRF6VP3450HSR6 equivalent, this device is selected for high-reliability, high-power DVB-T OFDM and broadband RF transmitter final-stage amplification where thermal stability, input matching, and ESD resilience are critical.

Technical Context

This device operates as a common-source RF power transistor in balanced push-pull configurations, characterized with series-equivalent large-signal impedance parameters (e.g., Z_source = 2.81 – j1.88 Ω at 470 MHz; Z_load = 5.52 + j2.34 Ω at 470 MHz). Its internal input matching eliminates external gate-matching networks in standard 50 Ω systems.

Designed for 50 V DC operation up to 225 °C junction temperature, it supports pulsed (50 μs, 2.5% duty cycle), CW, and OFDM signal modes - including 90 W average DVB-T output with –62 dBc ACPR at ±4 MHz offset and 4 kHz bandwidth.

Key Specifications

Pinout & Package

Package: NI-1230S (Case 375E-04, Style 1), ceramic/metal flange-mount package with integral heatsink base and solderable leads. Thermal resistance R_θJC = 0.25 °C/W at 44 °C case temperature, 450 W CW.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRFE6VP6300HR5 and CGHV1J005S, the MRF6VP3450HSR6 offers proven field reliability in 50 V UHF broadcast infrastructure, lower gate charge for simpler drive, and superior VSWR ruggedness - making it optimal for cost-sensitive, high-availability transmitter replacements where GaN adoption is not yet justified.

Availability

MRF6VP3450HSR6 is available at Aetrix Electronics and suitable for UHF TV transmitter upgrades, DVB-T broadcast amplifiers, and broadband RF power module manufacturing requiring stable component supply and long-term lifecycle support.

Supply support for MRF6VP3450HSR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this LDMOS product family for broadcast and industrial RF applications.

The MRF6VP3450HSR6 belongs to NXP's high-power LDMOS portfolio, engineered specifically for UHF television transmission systems demanding high efficiency, ruggedness, and consistent performance across wide bandwidths.

FAQ

What is the maximum continuous drain current rating for the MRF6VP3450HSR6?

The MRF6VP3450HSR6 does not specify a maximum continuous drain current (I_D) rating in its datasheet. Instead, safe operation is defined by thermal limits: junction temperature must not exceed 225 °C, and case temperature must remain ≤150 °C. At 450 W CW with 44 °C case temperature, typical I_D is ~12 A RMS - but actual current depends on V_DS, duty cycle, and thermal interface quality. Always validate using the Freescale MTTF calculator.

Can the MRF6VP3450HSR6 be used in single-ended configurations?

The MRF6VP3450HSR6 is explicitly designed and characterized for push-pull operation, with pinout, thermal symmetry, and internal matching optimized for balanced drive. While functional in single-ended mode, doing so forfeits specified gain, efficiency, and IMD performance - and violates the manufacturer's recommended application guidance. Use only in push-pull unless validated per AN1955 thermal methodology.

What is the gate threshold voltage range for the MRF6VP3450HSR6?

The MRF6VP3450HSR6 has a gate threshold voltage (V_GS(th)) range of 1.0–2.5 Vdc, measured at V_DS = 10 Vdc and I_D = 320 μAdc. This low threshold enables compatibility with standard ±5 V gate drivers and simplifies bias network design for Class AB/Class C operation.

Does the MRF6VP3450HSR6 require external input matching components?

No - the MRF6VP3450HSR6 is internally input matched for 50 Ω systems across 470–860 MHz, eliminating the need for external gate matching networks in standard test fixtures and production amplifiers. This reduces component count, layout sensitivity, and insertion loss - confirmed in Table 4 and Figure 2 schematic notes.

What is the thermal resistance (R_θJC) of the MRF6VP3450HSR6 under 450 W CW operation?

Under 450 W CW operation at 44 °C case temperature, the MRF6VP3450HSR6 exhibits a thermal resistance of R_θJC = 0.25 °C/W (per Table 2). This value is measured with the device mounted to a copper heatsink using recommended thermal interface material and mounting torque - critical for accurate junction temperature prediction in thermal design.