My Inquiry
My Account
NXP Semiconductors MRF6VP41KHR5
- Part No.:
- MRF6VP41KHR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230
- Datasheet:
-
MRF6VP41KHR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:6,149
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MRF6VP41KHR5 from NXP Semiconductors (formerly Freescale) is a 1000 W peak, 50 V lateral N-channel RF power MOSFET designed for broadband push-pull amplifier stages in industrial, scientific, and medical (ISM) systems operating up to 500 MHz. It delivers 20 dB power gain and 64% drain efficiency at 450 MHz under pulsed conditions (100 μs, 20% duty cycle), with 10:1 VSWR tolerance and integrated ESD protection.
For engineers reviewing the MRF6VP41KHR5 datasheet, MRF6VP41KHR5 pinout, MRF6VP41KHR5 application, or MRF6VP41KHR5 equivalent, this device requires attention to gate bias stability, thermal management at TC = 150°C, impedance matching networks per frequency band (352.2/450/500 MHz), and push-pull layout constraints - especially given its dual-gate/dual-drain configuration and 0.03 °C/W pulsed thermal impedance.
Technical Context
This device is a matched pair of enhancement-mode LDMOS transistors in a single NI-1230 package, configured for balanced push-pull operation. Its series-equivalent large-signal impedance parameters are characterized at 352.2 MHz (CW), 450 MHz (pulsed), and 500 MHz (pulsed), enabling precise input/output network synthesis using Zsource = 0.5 + j6.5 Ω (352.2 MHz) and Zload = 1.58 + j1.22 Ω (450 MHz).
It operates with VGS(th) = 1.68 V (typ), supports gate-source voltage range of –6 V to +10 V, and withstands 110 VDS breakdown. The device is qualified for continuous-wave operation up to 50 VDD with adequate heatsinking, and features integrated ESD protection meeting HBM Class 2 (2000 V), MM Class A (125 V), and CDM Class IV (2000 V).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 10–500 MHz - Supports wideband ISM amplifiers without retuning across HF/VHF/UHF bands. |
| Peak Output Power | 1000 W @ 450 MHz, 100 μs/20% - Enables high-duty-cycle radar and pulsed heating systems. |
| Drain Efficiency | 64% @ 450 MHz pulsed - Reduces thermal load and DC supply sizing vs. lower-efficiency alternatives. |
| Power Gain | 20 dB @ 450 MHz - Allows single-stage amplification from driver-level inputs (~30 dBm) to kW output. |
| Junction Temperature | TJ(max) = 225°C - Permits aggressive thermal design with derating curves validated to MTTF models. |
| VSWR Tolerance | 10:1 @ 50 VDC, 450 MHz, 1000 W peak - Ensures ruggedness in mismatched antenna or plasma load environments. |
| Thermal Impedance (Pulsed) | ZθJC = 0.03 °C/W - Dictates minimum heatsink thermal resistance required for safe pulsed operation. |
Pinout & Package
Package: NI-1230 (Case 375D-05, Style 1), ceramic/metal hermetic, isolated base, 4-terminal configuration optimized for push-pull RF layout and thermal conduction to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFinA / VGSA | Gate terminal of Device A | Input RF drive node for first transistor; requires stable negative bias for Class C operation. |
| 2 - RFinB / VGSB | Gate terminal of Device B | Complementary gate input; enables balanced push-pull drive with 180° phase relationship. |
| 3 - RFoutA / VDSA | Drain terminal of Device A | High-power RF output node; connected to output combiner/matching network. |
| 4 - RFoutB / VDSB | Drain terminal of Device B | Complementary high-power output; forms differential drain path with Pin 3. |
Key Features
| Feature | Design Value |
|---|---|
| Push-pull optimized architecture | Integrated dual-device layout eliminates inter-device skew and parasitic imbalance in high-power RF stages. |
| Negative VGS range (–6 V) | Enables deep Class C biasing for improved efficiency and harmonic suppression in narrowband applications. |
| ESD-protected gates | HBM 2000 V, MM 125 V, CDM 2000 V - Reduces handling sensitivity and field failure risk during assembly and test. |
| Characterized large-signal Z-parameters | Published source/load impedances at 352.2/450/500 MHz - Accelerates matching network design without de-embedding. |
| CW-capable with cooling | Rated for 1000 W CW at 352.2 MHz (67% efficiency) - Supports continuous RF heating, MRI excitation, and plasma generation. |
Applications
| Industrial RF Heating | Medical Diathermy Systems |
|---|---|
Use Scenario: High-power RF energy delivery into dielectric materials (e.g., plastic welding, food drying) at 27.12 MHz or 40.68 MHz. IC Role / Device Role / Timing Role: Final-stage RF power amplifier in solid-state generator, operating in pulsed or CW mode with active VSWR protection. Use Value: 10:1 VSWR tolerance prevents shutdown during load variation; 64% efficiency minimizes cooling requirements in enclosed cabinets. |
Use Scenario: 27.12 MHz or 40.68 MHz therapeutic RF energy delivery for deep tissue heating in physiotherapy equipment. IC Role / Device Role / Timing Role: Push-pull RF PA delivering regulated 500–1000 W output into variable patient-coupled loads. Use Value: Integrated ESD protection ensures reliability in clinical environments; 225°C TJ rating supports compact heatsink designs. |
| Scientific Plasma Generation | UHF Radar Transmitter Modules |
Use Scenario: Sustained 100–500 MHz RF excitation of low-pressure gas plasmas in semiconductor processing or material coating tools. IC Role / Device Role / Timing Role: Primary RF power stage driving resonant cavity or planar coil, requiring stable CW operation and thermal robustness. Use Value: 67% drain efficiency at 352.2 MHz reduces DC power consumption and heat sink mass; 0.15 °C/W RθJC enables forced-air cooling. |
Use Scenario: Pulsed transmitter in ground-based UHF radar (450 MHz) with 100 μs pulse width and 20% duty cycle. IC Role / Device Role / Timing Role: Final RF amplifier in transmit chain, delivering 1000 W peak into antenna feed network with fast transient response. Use Value: 20 dB small-signal gain simplifies driver stage design; pulsed ZθJC = 0.03 °C/W allows precise junction temperature prediction for MTTF assurance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRFE6VP61KHR5 | Higher Pout (1200 W peak), same 50 V, 10–500 MHz range; improved gain flatness and lower Crss (2.8 pF vs. 3.3 pF). | Better suited for multi-octave broadband systems requiring tighter gain ripple; higher cost and larger thermal footprint. | Select when >1000 W peak is needed or when system-level gain flatness over 10–500 MHz is critical. |
| CGHV1F025S | GaN-on-SiC process; 250 W CW at 1.3 GHz; not pin-compatible; higher gain (22 dB), higher efficiency (75%), but narrower bandwidth (1.2–1.4 GHz). | Targeted at L/S-band radar, not ISM bands; requires redesigned matching networks and gate bias circuitry. | Choose only for new designs targeting >1 GHz operation where GaN's high-frequency advantage outweighs redesign effort. |
Compared with MRFE6VP61KHR5, MRF6VP41KHR5 offers lower cost and proven thermal reliability in legacy ISM systems; compared with CGHV1F025S, it provides broader low-VHF/UHF coverage and mature support infrastructure, though at lower frequency ceiling and efficiency.
Availability
MRF6VP41KHR5 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, scientific plasma generation, and UHF radar transmitter modules requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability deployments.
Supply support for MRF6VP41KHR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues to support its RF power portfolio. NXP is a global leader in secure connectivity solutions, with deep expertise in RF, automotive, and industrial semiconductors.
The MRF6VP41KHR5 belongs to NXP's Airfast® RF power transistor family, engineered specifically for high-efficiency, high-reliability broadband amplification in industrial, scientific, and medical RF energy applications up to 500 MHz.
FAQ
What is the maximum continuous-wave (CW) output power rating for the MRF6VP41KHR5?
The MRF6VP41KHR5 is rated for 1000 W CW output at 352.2 MHz with 67% drain efficiency, VDD = 50 Vdc, and IDQ = 150 mA. Its total device dissipation is 1333 W at TC = 25°C under CW conditions, as specified in Rev. 6 (2012) of the datasheet. Operation above 352.2 MHz in CW mode requires derating based on thermal impedance curves and measured efficiency data.
Does the MRF6VP41KHR5 support single-ended operation, or is it strictly for push-pull configurations?
The MRF6VP41KHR5 is explicitly designed for push-pull operation, as confirmed by its dual-gate/dual-drain pinout, characterization data (e.g., Zsource/Zload measured "gate-to-gate" and "drain-to-drain"), and feature list stating "Designed for Push–Pull Operation." Single-ended use is not supported - attempting it risks imbalance, instability, and thermal runaway due to internal device coupling and unmatched parasitics.
What are the recommended gate bias conditions for Class C operation of the MRF6VP41KHR5?
For Class C operation, the MRF6VP41KHR5 leverages its extended negative gate-source voltage range (–6 V). Typical quiescent gate voltage VGS(Q) is 1.5–3.5 Vdc at IDQ = 150 mA and VDD = 50 Vdc. To achieve deep Class C, apply a negative DC offset (e.g., –1.5 to –3.0 V) superimposed on the RF drive, ensuring gate voltage never exceeds +10 V or drops below –6 V. Bias network must suppress oscillation and maintain stability across 10–500 MHz.
How does the thermal performance of the MRF6VP41KHR5 differ between pulsed and CW operation?
Pulsed operation (e.g., 100 μs, 20% duty cycle at 450 MHz) yields ZθJC = 0.03 °C/W, enabling rapid junction temperature estimation. CW operation at 352.2 MHz gives RθJC = 0.15 °C/W - five times higher - demanding significantly more aggressive heatsinking. Both values assume case temperature monitoring at the package base; actual thermal design must account for mounting interface resistance and ambient airflow per AN1955 guidelines.
Is the MRF6VP41KHR5 RoHS-compliant and lead-free?
Yes, the MRF6VP41KHR5 is RoHS-compliant and lead-free, consistent with NXP's product environmental compliance policy. The NI-1230 package uses lead-free metallization and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. Full compliance documentation, including substance declarations and test reports, is available via NXP's official product page and environmental portal.
MRF6VP41KHR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 450MHz
- Gain:
- 20dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 1000W
- Voltage - Rated:
- 110 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230
MRF6VP41KHR5 FAQ
1.How can I place an order for MRF6VP41KHR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF6VP41KHR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF6VP41KHR5 reliable?
The price and inventory of MRF6VP41KHR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP41KHR5 is usually 5 days.
3.What payment methods are accepted for MRF6VP41KHR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP41KHR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF6VP41KHR5?
MRF6VP41KHR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF6VP41KHR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF6VP41KHR5?
For technical support, including MRF6VP41KHR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP41KHR5 requirements.
6.How does Aetrix verify that MRF6VP41KHR5 is sourced from the original manufacturer or authorized distributors?
All MRF6VP41KHR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP41KHR5 meets industry standards.
7.What is the process for return or replacement of MRF6VP41KHR5?
All MRF6VP41KHR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP41KHR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF6VP41KHR5 part is unused and in its original packaging.
Return procedure for MRF6VP41KHR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF6VP41KHR5 Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
