NXP Semiconductors MRF6VP41KHR6

Overview

MRF6VP41KHR6 from NXP Semiconductors (formerly Freescale) is a 1000 W peak, 50 V lateral N-channel RF power MOSFET designed for push-pull broadband amplifier stages operating up to 500 MHz. It delivers 20 dB power gain and 64% drain efficiency at 450 MHz under pulsed conditions (100 μs, 20% duty), with 10:1 VSWR tolerance and integrated ESD protection - deployed in industrial RF heating, MRI gradient amplifiers, and scientific plasma generators.

For engineers reviewing the MRF6VP41KHR6 datasheet, MRF6VP41KHR6 pinout, MRF6VP41KHR6 application, or MRF6VP41KHR6 equivalent, this page provides verified electrical specs, thermal limits, push-pull impedance data at 352.2/450/500 MHz, package mechanicals, and validated alternative options for high-power RF amplifier design.

Technical Context

This device operates as a matched pair in push-pull configuration, with dual gate and dual drain terminals enabling balanced drive and output. Its lateral LDMOS structure supports both CW (1333 W total dissipation @ TC = 25°C) and pulse operation (1000 W peak), with gate threshold voltage of 1.68 V and zero-bias drain leakage below 100 μA at 50 VDS.

Thermal performance is defined by 0.03 °C/W transient ZθJC (100 μs, 20% duty) and 0.15 °C/W steady-state RθJC (CW, 352.2 MHz). Input/output impedances are characterized in series-equivalent form: at 450 MHz, Zsource = 0.86 + j1.06 Ω and Zload = 1.58 + j1.22 Ω (balanced gate-to-gate and drain-to-drain).

Key Specifications

Pinout & Package

Package: CASE 375D–05, STYLE 1 (NI–1230), ceramic/metal flange-mount with solderable baseplate. Thermal path optimized for heatsink mounting via case temperature monitoring at TC = 150°C max.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF6VP41KHR6, CGHV1F010D offers superior high-frequency gain and efficiency but sacrifices 50 V ruggedness and VSWR margin, while MRF6V2150N delivers greater peak power at sub-250 MHz but cannot support 500 MHz operation - making MRF6VP41KHR6 uniquely suited for 352–500 MHz industrial and scientific amplifiers requiring proven 10:1 mismatch resilience.

Availability

MRF6VP41KHR6 is available at Aetrix Electronics and suitable for industrial RF heating, MRI gradient amplification, and scientific plasma generation requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability deployments.

Supply support for MRF6VP41KHR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support its high-power LDMOS portfolio for industrial, medical, and aerospace applications.

The MRF6VP41KHR6 belongs to the MRF6VPxxKH family of broadband RF power transistors engineered specifically for high-efficiency, high-reliability pulsed and CW amplifier stages in demanding 10–500 MHz systems.

FAQ

What is the maximum continuous drain current rating for the MRF6VP41KHR6?

The MRF6VP41KHR6 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by junction temperature (225°C max), case temperature (150°C max), and thermal resistance (0.15 °C/W CW). At 50 VDD and 1333 W total dissipation, average ID can exceed 26 A - but actual current depends on load impedance and duty cycle. Designers must use the DC Safe Operating Area curve (Figure 5) and thermal models to validate current handling per application.

Does the MRF6VP41KHR6 require external gate protection diodes?

No, the MRF6VP41KHR6 includes integrated ESD protection rated to 2000 V HBM, 125 V MM, and 2000 V CDM. This eliminates the need for external gate protection diodes in standard PCB layouts. However, for systems exposed to extreme RF ingress or lightning-induced transients beyond JEDEC standards, supplemental transient voltage suppression at the gate feed point remains recommended - especially in outdoor or high-energy plasma environments where the MRF6VP41KHR6 is commonly deployed.

Can the MRF6VP41KHR6 be operated in single-ended mode?

The MRF6VP41KHR6 is explicitly designed for push-pull operation and characterized only in balanced configurations. Its pinout (dual gate/drain terminals), impedance data (Zsource/Zload referenced to gate-to-gate and drain-to-drain), and thermal model assume symmetrical current sharing. Single-ended use is not supported - it risks uneven thermal distribution, degraded VSWR tolerance, and unvalidated gain/efficiency. For single-ended designs, consider the MRF6V2150N or MRF6P21190HR6, which are specified for that topology.

What is the gate threshold voltage range for the MRF6VP41KHR6?

The MRF6VP41KHR6 has a gate threshold voltage (VGS(th)) range of 1.0–3.0 V, with a typical value of 1.68 V measured at VDS = 10 V and ID = 1600 μA. This low threshold enables efficient Class AB/B biasing using simple resistive or active gate bias networks. The specified VGS(Q) quiescent gate voltage (1.5–3.5 V) reflects operational variation under 50 VDD and 150 mA IDQ conditions - critical for setting stable idle current in push-pull amplifier stages using the MRF6VP41KHR6.

Is the MRF6VP41KHR6 RoHS compliant and lead-free?

Yes, the MRF6VP41KHR6 is RoHS compliant and lead-free. Per Freescale/NXP documentation (Rev. 6, April 2012), the device meets EU Directive 2011/65/EU and is manufactured using lead-free solderable terminations and halogen-free molding compounds. The NI–1230 package uses matte tin-plated copper alloy leads and a ceramic base - fully compatible with Pb-free reflow profiles (JEDEC J-STD-020) and industrial cleaning processes used in RF power module assembly.