NXP Semiconductors MRF6VP41KHR7

Overview

MRF6VP41KHR7 from NXP Semiconductors (formerly Freescale) is a 1000 W, 50 V, lateral N-channel broadband RF power MOSFET designed for push-pull pulse and CW operation up to 500 MHz. It delivers 20 dB power gain and 64% drain efficiency at 450 MHz with 1000 W peak output, and operates with 150 mA quiescent drain current. It is used in industrial RF heating, medical diathermy, and scientific plasma generation systems requiring high-power wideband amplification.

For engineers reviewing the MRF6VP41KHR7 datasheet, MRF6VP41KHR7 pinout, MRF6VP41KHR7 application, or MRF6VP41KHR7 equivalent, this page provides verified electrical specifications, thermal performance data, push-pull impedance matching networks, ESD protection ratings, and real-world test circuit configurations across 352.2 MHz, 450 MHz, and 500 MHz bands.

Technical Context

This device is an unmatched, enhancement-mode LDMOS transistor optimized for wideband RF power amplification in pulsed and continuous-wave modes. Its design supports 10:1 VSWR tolerance at 50 Vdc and 450 MHz, integrated ESD protection per HBM (2000 V), MM (125 V), and CDM (2000 V), and operation up to 225°C junction temperature.

The MRF6VP41KHR7 features a negative gate-source voltage range extended to –6 V for improved Class C operation, series-equivalent large-signal impedance characterization, and qualification for 50 VDD maximum operation. Its thermal resistance is 0.15 °C/W (CW) and transient thermal impedance is 0.03 °C/W (pulse), enabling robust thermal management in high-power amplifier stages.

Key Specifications

Pinout & Package

Package: CASE 375D–05, STYLE 1 (NI–1230), ceramic/metal flange-mount package with isolated source terminals and integral heatsink base. Thermal path optimized for low ZθJC (0.03 °C/W pulsed).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with CGHV14800F and MRF6V2150N, the MRF6VP41KHR7 uniquely combines 1000 W CW capability, 10–500 MHz bandwidth, 10:1 VSWR tolerance, and full impedance characterization down to 352.2 MHz - making it the only validated choice for high-reliability industrial and medical RF power systems below 500 MHz.

Availability

MRF6VP41KHR7 is available at Aetrix Electronics and suitable for industrial RF heating, medical diathermy, scientific plasma generation, and broadband amplifier module development requiring stable component supply and long-term lifecycle support.

Supply support for MRF6VP41KHR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in ruggedized RF transistors for mission-critical industrial and medical applications.

The MRF6VP41KHR7 belongs to NXP's MRF6VP family of high-power LDMOS transistors, engineered specifically for wideband, high-efficiency, high-VSWR-tolerant RF amplification in demanding non-telecom environments.

FAQ

What is the maximum continuous drain current rating for the MRF6VP41KHR7?

The MRF6VP41KHR7 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by junction temperature (225°C max), case temperature (150°C max), and thermal resistance (0.15 °C/W CW). At 50 VDD and 1000 W CW, the average drain current is approximately 20 A - but actual ID depends on modulation, duty cycle, and heatsinking. Always verify thermal design using the MTTF calculator and transient thermal impedance curves in the official datasheet.

Can the MRF6VP41KHR7 be operated in single-ended configuration?

No - the MRF6VP41KHR7 is explicitly designed and characterized for push-pull operation only. Its pinout (dual gate/drain terminals), impedance data (Zsource/Zload measured gate-to-gate and drain-to-drain), and application circuits all assume balanced drive and load. Single-ended use violates the device's qualification conditions, risks thermal imbalance, and voids performance guarantees including 10:1 VSWR tolerance and 20 dB gain.

What is the gate threshold voltage range for the MRF6VP41KHR7?

The gate threshold voltage (VGS(th)) for the MRF6VP41KHR7 is specified as 1.0–3.0 Vdc (typical 1.68 Vdc) at VDS = 10 Vdc and ID = 1600 μAdc. This low threshold enables direct drive from standard ±5 V gate bias supplies and simplifies gate driver selection in high-power amplifier designs.

Does the MRF6VP41KHR7 require external gate resistors for stability?

Yes - external gate stopper resistors (typically 5–10 Ω, non-inductive, mounted close to the gate pins) are mandatory for stability in both pulse and CW operation. The device's high gain and broad bandwidth make it susceptible to VHF/UHF parasitic oscillation. Freescale's reference designs (e.g., Fig. 2 and Fig. 15) include these resistors, and omitting them risks device failure due to self-oscillation and localized hot-spotting.

Is the MRF6VP41KHR7 RoHS compliant and lead-free?

Yes - the MRF6VP41KHR7 is RoHS compliant and lead-free. Per Freescale/NXP documentation (Rev. 6, April 2012), the device meets JEDEC J-STD-609 Category 3 marking requirements and uses matte tin (Sn) plating on leads. The ceramic/metal package (CASE 375D–05) contains no lead-based solder or finishes, and conforms to EU Directive 2011/65/EU and China RoHS II.