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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

NXP Semiconductors MRF6VP41KHSR6

Name: MRF6VP41KHSR6
Brand: NXP Semiconductors
SKU: MRF6VP41KHSR6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MRF6VP41KHSR6

Manufacturer:: NXP Semiconductors

Category:: Single FETs, MOSFETs

Package:: NI-1230S

Datasheet:: MRF6VP41KHSR6.pdf

Description:: RF MOSFET LDMOS 50V NI1230

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MRF6VP41KHSR6 from NXP Semiconductors (formerly Freescale) is a 1000 W peak, 50 V lateral N-channel RF power MOSFET designed for broadband push-pull amplifier stages in industrial, scientific, and medical (ISM) systems operating from 10–500 MHz. It delivers 20 dB power gain and 64% drain efficiency at 450 MHz under pulsed conditions (100 μs, 20% duty cycle), with 10:1 VSWR tolerance and integrated ESD protection.

For engineers reviewing the MRF6VP41KHSR6 datasheet, MRF6VP41KHSR6 pinout, MRF6VP41KHSR6 application, or MRF6VP41KHSR6 equivalent, key selection criteria include its 225°C maximum junction temperature, 0.03°C/W pulsed thermal impedance, 110 VDS breakdown rating, push-pull configuration requirement, and NI-1230S package compatibility with high-power RF matching networks.

Technical Context

This device operates as an unmatched, enhancement-mode RF power transistor optimized for wideband pulse and CW amplification up to 500 MHz. Its lateral MOSFET architecture supports high peak power handling with low Crss (3.3 pF) and Ciss (506 pF), enabling stable broadband matching across ISM bands.

The MRF6VP41KHSR6 requires balanced push-pull operation with gate-source voltage range of –6 V to +10 V and drain-source voltage up to +110 V. It is characterized using series-equivalent large-signal impedance parameters (e.g., Zsource = 0.75 + j0.5 Ω at 500 MHz), supporting precise input/output network design in high-efficiency RF final stages.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	10–500 MHz - Supports multi-band ISM amplifiers without retuning across HF/VHF/UHF bands.
Peak Output Power	1000 W @ 450 MHz, 100 μs/20% - Enables high-duty-cycle radar and plasma generation pulses.
Drain Efficiency	64% @ 450 MHz - Reduces thermal load and heatsink size in continuous-duty RF heating systems.
Power Gain	20 dB @ 450 MHz - Allows single-stage amplification from driver-level inputs to kW output.
V_DS Rating	+110 V - Permits safe operation at 50 V supply with margin for transient overvoltage in mismatched loads.
Junction Temperature	225°C - Enables reliable operation in sealed enclosures or high-ambient industrial environments.
Thermal Impedance (Pulsed)	0.03°C/W - Supports rapid heat extraction during short-duration high-power bursts.
VSWR Tolerance	10:1 @ 50 V, 450 MHz - Maintains stability and prevents failure in variable-load applications like RF plasma.

Pinout & Package

Package: NI-1230S (Case 375E-04, Style 1), ceramic/metal flange-mount with solderable baseplate for direct thermal coupling to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (RFoutA / VDSA)	Drain terminal A	High-current RF output node for one side of push-pull pair; requires low-inductance RF path to output matching network.
2 (RFinB / VGSB)	Gate terminal B	Input control node for second transistor in balanced configuration; must be driven with equal amplitude/phase signal.
3 (RFoutB / VDSB)	Drain terminal B	Second high-current RF output node; used with Pin 1 for differential drain-to-drain load impedance (e.g., 1.58 + j1.22 Ω @ 450 MHz).
4 (RFinA / VGSA)	Gate terminal A	Primary input control node; referenced to common source; requires DC blocking and bias feed network per Freescale test fixture.

Key Features

Feature	Design Value
Push-pull optimized layout	Asymmetric pin arrangement (Pins 1/3 = drains, Pins 4/2 = gates) enables symmetrical PCB routing and minimized parasitic imbalance.
Extended negative V_GS range	–6 V capability allows deep Class C biasing for improved efficiency in fixed-frequency RF heating applications.
Integrated ESD protection	HBM 2000 V, MM 125 V, CDM 2000 V - Eliminates need for external gate protection diodes in production assemblies.
Large-signal impedance characterization	Published Z_source/Z_load data at 352.2/450/500 MHz - Enables accurate microstrip or lumped-element matching without de-embedding.
Tape-and-reel packaging	R6 suffix = 150 units per 56 mm, 13″ reel - Supports automated SMT placement of high-power discrete devices with precision thermal pad alignment.

Applications

RF Plasma Generation	Industrial RF Heating
Use Scenario: High-power RF energy delivery into plasma chambers for semiconductor etching or surface treatment. IC Role / Device Role / Timing Role: Final-stage RF power transistor in push-pull amplifier driving resonant cavity load. Use Value: 10:1 VSWR tolerance ensures survival during plasma ignition transients; 64% efficiency reduces cooling requirements in sealed chamber designs.	Use Scenario: Dielectric heating of plastics, wood, or food products using 27.12 MHz or 40.68 MHz ISM band amplifiers. IC Role / Device Role / Timing Role: Unmatched broadband RF power switch delivering 1000 W peak into variable load impedance. Use Value: 20 dB gain enables compact two-stage amplifier architecture; 225°C junction rating accommodates ambient temperatures up to 85°C in factory-floor enclosures.
Medical Diathermy Systems	Scientific Particle Accelerators
Use Scenario: Therapeutic RF energy delivery in physiotherapy equipment operating at 27.12 MHz. IC Role / Device Role / Timing Role: CW-capable RF power stage generating controlled 1000 W output for tissue heating. Use Value: 67% drain efficiency at 352.2 MHz CW minimizes power loss and improves patient safety via reduced thermal drift.	Use Scenario: Pulsed RF amplification for klystron driver stages or solid-state linac modulators. IC Role / Device Role / Timing Role: High-peak-power switch in pulse-forming network (PFN) interface stage. Use Value: 0.03°C/W pulsed thermal impedance enables 100 μs/20% duty cycle operation without junction overheating; 110 V_DS rating withstands PFN voltage overshoot.

RF Plasma Generation

Industrial RF Heating

Use Scenario: High-power RF energy delivery into plasma chambers for semiconductor etching or surface treatment.

IC Role / Device Role / Timing Role: Final-stage RF power transistor in push-pull amplifier driving resonant cavity load.

Use Value: 10:1 VSWR tolerance ensures survival during plasma ignition transients; 64% efficiency reduces cooling requirements in sealed chamber designs.

Use Scenario: Dielectric heating of plastics, wood, or food products using 27.12 MHz or 40.68 MHz ISM band amplifiers.

IC Role / Device Role / Timing Role: Unmatched broadband RF power switch delivering 1000 W peak into variable load impedance.

Use Value: 20 dB gain enables compact two-stage amplifier architecture; 225°C junction rating accommodates ambient temperatures up to 85°C in factory-floor enclosures.

Medical Diathermy Systems

Scientific Particle Accelerators

Use Scenario: Therapeutic RF energy delivery in physiotherapy equipment operating at 27.12 MHz.

IC Role / Device Role / Timing Role: CW-capable RF power stage generating controlled 1000 W output for tissue heating.

Use Value: 67% drain efficiency at 352.2 MHz CW minimizes power loss and improves patient safety via reduced thermal drift.

Use Scenario: Pulsed RF amplification for klystron driver stages or solid-state linac modulators.

IC Role / Device Role / Timing Role: High-peak-power switch in pulse-forming network (PFN) interface stage.

Use Value: 0.03°C/W pulsed thermal impedance enables 100 μs/20% duty cycle operation without junction overheating; 110 V_DS rating withstands PFN voltage overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CGHV14800F	800 W peak, GaN-on-SiC, 1.2–1.4 GHz bandwidth, higher gain (23 dB), lower C_iss (290 pF)	Better suited for L/S-band radar; not rated for sub-100 MHz operation or 10:1 VSWR	Select when frequency > 1 GHz and efficiency > 70% required; avoid for 27/40 MHz ISM due to limited low-frequency characterization.
MRF6V2150N	1500 W peak, same LDMOS process, 10–250 MHz range, higher P_D (1500 W CW), larger NI-1230 package	Broader low-frequency coverage but lacks 500 MHz validation; no published 500 MHz Z_load data	Prefer for HF-band amplifiers requiring >1 kW CW; verify thermal interface compatibility-larger footprint requires different heatsink cutout.

Compared with CGHV14800F and MRF6V2150N, the MRF6VP41KHSR6 uniquely balances 10–500 MHz bandwidth, 10:1 VSWR robustness, and push-pull-optimized pinout-making it the only qualified option for broadband ISM amplifiers requiring both 27 MHz plasma ignition and 450 MHz stabilization in a single design.

Availability

MRF6VP41KHSR6 is available at Aetrix Electronics and suitable for RF plasma generation, industrial heating, medical diathermy, and scientific accelerator systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for MRF6VP41KHSR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and manufacturing continuity for legacy LDMOS products.

The MRF6VP41KHSR6 belongs to the MRF6VP41KH family of high-power lateral MOSFETs engineered specifically for ruggedized, broadband RF amplification in industrial, scientific, and medical infrastructure where reliability under mismatched loads is critical.

FAQ

What is the maximum continuous wave (CW) power rating for the MRF6VP41KHSR6?

The MRF6VP41KHSR6 has a total device dissipation rating of 1333 W at case temperature (T_C) = 25°C under CW operation. This corresponds to approximately 1107 W RF output at 352.2 MHz with 67% drain efficiency. Derating is required above 25°C case temperature per the R_θJC = 0.15°C/W thermal resistance value specified in the datasheet. The MRF6VP41KHSR6 must be mounted on a heatsink capable of maintaining T_C ≤ 84°C for full-rated CW performance.

Does the MRF6VP41KHSR6 require external ESD protection circuitry?

No, the MRF6VP41KHSR6 integrates on-die ESD protection rated to Human Body Model (HBM) 2000 V, Machine Model (MM) 125 V, and Charge Device Model (CDM) 2000 V. These ratings meet standard handling requirements for production environments, eliminating the need for external gate protection diodes. However, proper PCB layout-such as minimizing gate trace length and avoiding floating nodes-remains essential to preserve this protection integrity in the MRF6VP41KHSR6 application.

Can the MRF6VP41KHSR6 be operated in single-ended mode?

No-the MRF6VP41KHSR6 is explicitly designed and characterized for push-pull operation only. Its pinout (dual drain/gate terminals), thermal structure, and published large-signal impedances (e.g., Z_load = 1.58 + j1.22 Ω at 450 MHz) assume balanced drive and load conditions. Single-ended use violates the device's qualification basis, risks thermal imbalance, and voids performance guarantees. The MRF6VP41KHSR6 datasheet provides no single-ended bias recommendations or safe operating area data.

What is the recommended gate bias voltage for Class AB operation of the MRF6VP41KHSR6?

For Class AB operation at V_DD = 50 V and I_DQ = 150 mA, the MRF6VP41KHSR6 specifies a gate quiescent voltage V_GS(Q) of 1.5–3.5 Vdc (typical 2.2 Vdc). This is measured in functional test with the device in push-pull configuration. Bias networks must provide stable DC voltage while maintaining low impedance at RF frequencies-typically achieved using ferrite beads (e.g., Fair-Rite 2743019447) and bypass capacitors as shown in the Freescale 450 MHz test circuit. The MRF6VP41KHSR6 gate threshold voltage V_GS(th) is 1–3 Vdc, confirming suitability for low-voltage bias control.

Is the MRF6VP41KHSR6 pin-compatible with the MRF6VP41KHR6?

Yes-the MRF6VP41KHSR6 and MRF6VP41KHR6 share identical pinout, package (NI-1230S vs. NI-1230), and electrical specifications; they differ only in tape-and-reel packaging (R6 = 150 units, R5 = 50 units) and minor thermal test condition updates per Revision 6 of the datasheet. Both parts use the same die, bonding, and flange construction. The MRF6VP41KHSR6 may be substituted for MRF6VP41KHR6 in existing designs without PCB or thermal interface changes, provided reel logistics align with production requirements.

MRF6VP41KHSR6 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: NI-1230S

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Technology:: LDMOS

Configuration:: Dual

Frequency:: 450MHz

Gain:: 20dB

Voltage - Test:: 50 V

Current Rating (Amps):: -

Noise Figure:: -

Current - Test:: 150 mA

Power - Output:: 1000W

Voltage - Rated:: 110 V

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: NI-1230S

MRF6VP41KHSR6 FAQ

1.How can I place an order for MRF6VP41KHSR6 through Aetrix?

Please submit a Request for Quotation (RFQ) for MRF6VP41KHSR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MRF6VP41KHSR6 reliable?

The price and inventory of MRF6VP41KHSR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF6VP41KHSR6 is usually 5 days.

3.What payment methods are accepted for MRF6VP41KHSR6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF6VP41KHSR6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MRF6VP41KHSR6?

MRF6VP41KHSR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MRF6VP41KHSR6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MRF6VP41KHSR6?

For technical support, including MRF6VP41KHSR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF6VP41KHSR6 requirements.

6.How does Aetrix verify that MRF6VP41KHSR6 is sourced from the original manufacturer or authorized distributors?

All MRF6VP41KHSR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF6VP41KHSR6 meets industry standards.

7.What is the process for return or replacement of MRF6VP41KHSR6?

All MRF6VP41KHSR6 units undergo pre-shipment inspection (PSI). If there is an issue with MRF6VP41KHSR6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MRF6VP41KHSR6 part is unused and in its original packaging.

Return procedure for MRF6VP41KHSR6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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