NXP Semiconductors MRF6VP41KHSR7

Overview

MRF6VP41KHSR7 from NXP Semiconductors (formerly Freescale) is a 1000 W, 50 V, lateral N-channel broadband RF power MOSFET designed for push-pull operation in pulse and CW wideband amplifiers up to 500 MHz. It delivers 20 dB power gain and 64% drain efficiency at 450 MHz with 1000 W peak output, and operates with 150 mA quiescent drain current under 50 V DC supply - deployed in industrial RF heating, MRI gradient amplifiers, and scientific plasma generation systems.

For engineers reviewing the MRF6VP41KHSR7 datasheet, MRF6VP41KHSR7 pinout, MRF6VP41KHSR7 application, or MRF6VP41KHSR7 equivalent, this page provides verified electrical specs, thermal performance data, push-pull impedance matching points, ESD protection class ratings, and real-world test-circuit validation across 352.2 MHz, 450 MHz, and 500 MHz bands - all critical for high-reliability RF power stage design and thermal management planning.

Technical Context

This device is a dual-gate, dual-drain unmatched RF power transistor optimized for balanced push-pull configurations. Its lateral LDMOS structure supports 225°C maximum junction temperature, 10:1 VSWR tolerance at 50 V/450 MHz, and integrated ESD protection meeting HBM Class 2 (2000 V), MM Class A (125 V), and CDM Class IV (2000 V).

It is characterized using series-equivalent large-signal impedance parameters: at 450 MHz, Z_source = 0.86 + j1.06 Ω and Z_load = 1.58 + j1.22 Ω (balanced gate-to-gate and drain-to-drain); at 352.2 MHz (CW), Z_source = 0.5 + j6.5 Ω and Z_load = 2.9 + j6.35 Ω - enabling precise input/output matching network synthesis.

Key Specifications

Pinout & Package

Package: NI-1230S (Case 375E-04, Style 1), ceramic/metal flange-mount package with isolated source terminals and integral heatsink interface. Thermal path optimized for forced-air or liquid-cooled mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with CGHV14800F and MRF6V2150N, the MRF6VP41KHSR7 uniquely combines 1000 W peak/pulse capability below 500 MHz, 10:1 VSWR tolerance, and push-pull impedance data - making it irreplaceable for legacy RF heating, MRI, and plasma systems where frequency, power, and ruggedness intersect.

Availability

MRF6VP41KHSR7 is available at Aetrix Electronics and suitable for industrial RF heating, MRI gradient amplification, scientific plasma generation, and broadband test equipment requiring stable component supply across long-lifecycle programs.

Supply support for MRF6VP41KHSR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in robust, thermally optimized semiconductor components for mission-critical RF infrastructure.

The MRF6VP41KHSR7 belongs to NXP's MRF6V family of broadband LDMOS transistors, engineered specifically for industrial, medical, and scientific RF power amplification where reliability under mismatch and thermal stress is non-negotiable.

FAQ

What is the maximum continuous drain current rating for the MRF6VP41KHSR7?

The MRF6VP41KHSR7 does not specify a maximum continuous drain current (I_D) as a standalone parameter. Instead, its safe operating area is defined by voltage, power, and thermal limits: maximum V_DSS = +110 V, total device dissipation = 1333 W CW @ T_C = 25°C, and case temperature limit = 150°C. Actual I_D depends on operating point - e.g., at 50 V and 1000 W CW, average I_D ≈ 20 A (P = V × I). The MRF6VP41KHSR7 must be operated within the DC Safe Operating Area curve (Fig. 5) to prevent secondary breakdown.

Does the MRF6VP41KHSR7 support single-ended operation, or is push-pull mandatory?

The MRF6VP41KHSR7 is explicitly designed and characterized for push-pull operation, as stated in the Freescale documentation: "PARTS ARE PUSH–PULL" and "Measurement made with device in push–pull configuration." While not prohibited, single-ended use is unsupported - no impedance data, gain, or efficiency specs are provided for that topology. The dual-gate/dual-drain pinout and matched internal structure assume balanced drive; using MRF6VP41KHSR7 single-ended risks asymmetry, thermal imbalance, and unvalidated performance.

What is the gate threshold voltage range for the MRF6VP41KHSR7, and how does it impact bias design?

The MRF6VP41KHSR7 has a gate threshold voltage V_GS(th) of 1.0–3.0 V (typical 1.68 V) at V_DS = 10 V and I_D = 1600 μA. Its gate quiescent voltage V_GS(Q) is specified as 1.5–3.5 V (typical 2.2 V) under 50 V drain supply and 150 mA I_DQ. This narrow, well-controlled V_GS(th) range enables stable Class AB biasing with minimal drift; however, the –6 V maximum V_GS rating allows intentional negative gate bias for Class C operation - a key enabler for high-efficiency narrowband amplifiers using the MRF6VP41KHSR7.

How is thermal performance measured for the MRF6VP41KHSR7 - junction-to-case or junction-to-ambient?

Thermal performance for the MRF6VP41KHSR7 is specified exclusively as junction-to-case: R_θJC = 0.15 °C/W for CW operation and Z_θJC = 0.03 °C/W for pulsed operation (100 μs, 20% duty cycle). Junction-to-ambient values are not provided because system-level thermal resistance depends entirely on heatsink design, mounting pressure, thermal interface material, and airflow - variables outside the device's control. Engineers must use the MRF6VP41KHSR7's R_θJC value in conjunction with their mechanical thermal model to calculate total T_J rise above ambient.

Can the MRF6VP41KHSR7 be used at 500 MHz in continuous wave mode, or is it pulse-only at that frequency?

The MRF6VP41KHSR7 is characterized for 500 MHz operation only in pulsed mode: "Typical Performance - 500 MHz … Pout = 1000 W Peak (200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle." No CW-rated performance (gain, efficiency, or power) is published at 500 MHz. Its validated CW operation is limited to 352.2 MHz (1000 W CW). Attempting 500 MHz CW risks exceeding safe operating area limits due to increased capacitance-related losses and reduced thermal time constants - the MRF6VP41KHSR7 should be applied at 500 MHz only per its documented pulse specifications.