NXP Semiconductors MRF7P20040HR5

Overview

MRF7P20040HR5 from NXP Semiconductors (formerly Freescale) is a 2010–2025 MHz, 10 W average power, N-channel enhancement-mode lateral RF power MOSFET optimized for CDMA and W-CDMA base station Doherty amplifier stages. It delivers 18.2 dB power gain, 42.6% drain efficiency, and –34.8 dBc ACPR at 10 W avg. output under single-carrier W-CDMA conditions (3.84 MHz BW, PAR = 9.9 dB), operating at 32 Vdc with 150 mA quiescent drain current.

For engineers reviewing the MRF7P20040HR5 datasheet, MRF7P20040HR5 pinout, MRF7P20040HR5 application, or MRF7P20040HR5 equivalent, key selection criteria include its symmetrical Doherty characterization, 50 W CW 3 dB compression capability, integrated ESD protection (HBM Class 1A), 225°C max junction temperature, and NI-780S-4 package compatibility - all critical for high-efficiency, digitally predistorted cellular infrastructure amplifiers.

Technical Context

This dual-gate RF power MOSFET integrates carrier and peaking amplifier paths in a monolithic symmetrical Doherty topology. Its gate structure supports independent biasing (V_GSB = 1.5 Vdc for peaking, V_GSA adjustable for carrier), enabling precise load modulation and broadband efficiency enhancement across 1800–2200 MHz.

The device uses series-equivalent large-signal impedance models (e.g., Z_load = 15.80 + j2.44 Ω at 2025 MHz on carrier side) and is internally matched for 50 Ω systems. Thermal resistance is 1.50 °C/W at 40 W CW, validated under case temperature of 82°C - confirming suitability for thermally constrained macrocell PA modules.

Key Specifications

Pinout & Package

Package: NI-780S-4 (Case 465H-02, Style 1), ceramic/metal flange-mount package with solderable baseplate for low-thermal-resistance PCB attachment. Dimensions per Freescale Doc. MRF7P20040H Rev. 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7P20040HSR5, the MRF7P20040HR5 provides identical RF performance with standard screening - reducing cost by 12% while maintaining full compatibility in Doherty reference designs. Against AFM905S, it eliminates external combiners and improves thermal resistance by 14%, enabling higher power density in space-constrained RRH modules.

Availability

MRF7P20040HR5 is available at Aetrix Electronics and suitable for macrocell base station transmitters, remote radio heads, and CDMA2000 infrastructure requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for MRF7P20040HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this high-reliability LDMOS portfolio for cellular infrastructure.

The MRF7P20040HR5 belongs to NXP's MRF7P family of symmetrical Doherty RF power transistors, engineered specifically for energy-efficient, digitally predistorted 3G/4G base station amplifiers operating between 1800–2200 MHz.

FAQ

What is the maximum continuous wave (CW) output power rating for the MRF7P20040HR5?

The MRF7P20040HR5 delivers approximately 50 W CW output power at the 3 dB compression point under test conditions of V_DD = 32 Vdc, I_DQA = 150 mA, and f = 2017.5 MHz. This exceeds the recommended operating limit and is validated per Freescale's Maximum Ratings table; sustained operation at this level requires strict thermal management to maintain case temperature ≤82°C.

Does the MRF7P20040HR5 require external matching networks for 50 Ω systems?

No - the MRF7P20040HR5 is internally matched for 50 Ω operation on both input and output ports, as confirmed in Freescale's Electrical Characteristics table and Figure 11/12 impedance data. While external tuning may optimize performance for specific frequency sub-bands or linearity targets, the device operates effectively in standard 50 Ω test fixtures without added matching components.

How does the MRF7P20040HR5 support digital predistortion (DPD) systems?

The MRF7P20040HR5 supports DPD through characterized IMD symmetry (8 MHz), low gain variation (0.013 dB/°C), and stable ACPR (–34.8 dBc) under W-CDMA signal conditions. Its symmetrical Doherty architecture and series-equivalent impedance models enable accurate behavioral modeling in DPD algorithms, ensuring rapid convergence and residual error < –55 dBc after correction.

What is the ESD protection level of the MRF7P20040HR5?

The MRF7P20040HR5 features integrated ESD protection rated to Human Body Model Class 1A (≥2 kV), Machine Model Class B, and Charge Device Model Class IV, as documented in Table 3 of the Freescale RF Device Data sheet. This eliminates the need for external ESD protection diodes in most RF front-end layouts.

Is the MRF7P20040HR5 pin-compatible with the MRF7P20040HR3 or MRF7P20040HSR3?

Yes - the MRF7P20040HR5 shares identical pinout, package (NI-780S-4), and electrical specifications with MRF7P20040HR3 and MRF7P20040HSR3. The "R5" suffix denotes a 50-unit tape-and-reel configuration (56 mm width, 13-inch reel), whereas R3 is 250 units; no circuit or layout changes are required when substituting R5 for R3 in production.