NXP Semiconductors MRF7P20040HSR3

Overview

MRF7P20040HSR3 from NXP Semiconductors (formerly Freescale) is a dual-path, symmetrical Doherty RF power MOSFET optimized for CDMA and W-CDMA base station amplifiers operating from 1800–2200 MHz. It delivers 10 W average output power at 32 Vdc with 18.2 dB power gain, 42.6% drain efficiency, and –34.8 dBc ACPR under single-carrier W-CDMA conditions (3.84 MHz bandwidth, 9.9 dB PAR). Designed for digital predistortion systems, it supports Class AB/C operation in macrocell infrastructure.

For engineers reviewing the MRF7P20040HSR3 datasheet, MRF7P20040HSR3 pinout, MRF7P20040HSR3 application, or MRF7P20040HSR3 equivalent, key selection criteria include its validated 50 W CW 3-dB compression point, integrated ESD protection (HBM Class 1A), 2.11 °C/W thermal resistance at 10 W, symmetrical Doherty characterization, and NI-780S-4 package compatibility with production test fixtures.

Technical Context

The MRF7P20040HSR3 integrates two laterally diffused N-channel enhancement-mode MOSFETs - Carrier (RFinA/VGSA, RFoutA/VDSA) and Peaking (RFinB/VGSB, RFoutB/VDSB) - on a single die. Its internal matching network enables 50 Ω system integration without external impedance tuning at 2010–2025 MHz, and series-equivalent large-signal S-parameters are provided per side for accurate PA modeling.

It operates with separate gate biasing (VGS(Q) = 2.0–3.5 Vdc for carrier, VGSB = 1.5 Vdc fixed for peaking) and shares a common 32 Vdc drain supply. Thermal design is constrained by a maximum junction temperature of 225°C and case temperature limit of 150°C, requiring heatsink interface with ≤1.50 °C/W total thermal resistance for 40 W CW operation.

Key Specifications

Pinout & Package

Package: NI-780S-4 (Case 465H-02, Style 1), surface-mount ceramic/metal flange with solderable baseplate. Dimensions: 10.16 mm × 10.16 mm × 4.06 mm (L × W × H), RoHS-compliant, tape-and-reel (R3 = 250 units, 56 mm width, 13″ reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7P20040HSR3, MRF7P20040HR3 demands PCB rework for mechanical fit, while AFM7020040S offers superior thermal and efficiency metrics but requires gate bias recalibration - both serve distinct lifecycle and performance optimization goals.

Availability

MRF7P20040HSR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, CDMA2000 infrastructure, and DPD reference platforms requiring stable component supply, long-term obsolescence management, and traceable lot-level documentation.

Supply support for MRF7P20040HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015, inheriting leadership in LDMOS technology for cellular infrastructure. NXP designs high-reliability RF transistors for mission-critical wireless systems.

The MRF7P20040HSR3 belongs to NXP's MRF7P family of symmetrical Doherty LDMOS transistors, engineered specifically for energy-efficient, digitally predistorted 3G/4G macro base station PAs operating up to 2.2 GHz.

FAQ

What is the maximum continuous drain voltage rating for the MRF7P20040HSR3?

The MRF7P20040HSR3 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This rating defines the absolute limit for safe DC bias application; operation at 32 Vdc (typical for cellular PAs) provides 100% margin against transient overvoltage events in base station power supplies. Exceeding +65 Vdc risks irreversible gate oxide breakdown.

Does the MRF7P20040HSR3 require external matching components for 50 Ω system integration?

No - the MRF7P20040HSR3 is internally matched for 50 Ω operation across 1800–2200 MHz. Its input and output ports are pre-tuned using on-die passive structures, eliminating discrete matching networks in standard Doherty configurations. However, external harmonic filters or isolators may still be needed depending on system ACLR requirements and antenna VSWR profiles.

How is the MRF7P20040HSR3 tested for Doherty performance compliance?

The MRF7P20040HSR3 undergoes 100% production testing in a Freescale-specified symmetrical Doherty fixture with 50 Ω terminations. Each unit is verified for 10 W average W-CDMA output, 18.2 dB gain, 42.6% drain efficiency, and –34.8 dBc ACPR at 2025 MHz - ensuring functional readiness before shipment. This eliminates need for wafer-level parameter screening.

What thermal interface materials are recommended for mounting the MRF7P20040HSR3?

For optimal thermal performance, NXP recommends soldering the MRF7P20040HSR3's copper flange directly to a nickel-plated aluminum heatsink using Pb-free solder (e.g., SAC305). Thermal paste or pads are discouraged - they add ≥0.5 °C/W interface resistance, degrading the specified 2.11 °C/W RθJC and risking junction temperature exceedance above 225°C under 40 W CW load.

Can the MRF7P20040HSR3 be used in Class C mode for narrowband applications?

Yes - the MRF7P20040HSR3 supports Class C operation via its extended –6.0 Vdc gate-source voltage rating and optimized peaking-side gate structure. When biased with VGSB = 0 Vdc and VGS(Q) adjusted below 2.0 Vdc, it achieves higher efficiency (>55%) in narrowband ISM or FM applications, though W-CDMA linearity metrics no longer apply. Gate drive must remain within ±6.0 Vdc limits.