NXP Semiconductors MRF7S16150HSR3

Overview

MRF7S16150HSR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for WiMAX base station amplifiers operating at 1600–1660 MHz. It delivers 32 W average RF output power at 28 Vdc, achieves 19.7 dB power gain and 25.4% drain efficiency under 802.16d 64-QAM 3/4 signal conditions, and supports Class AB/C operation in OFDM multicarrier systems.

For engineers reviewing the MRF7S16150HSR3 datasheet, MRF7S16150HSR3 pinout, MRF7S16150HSR3 application, or MRF7S16150HSR3 equivalent, key selection criteria include its 1600–1660 MHz bandwidth, 150 W CW P1dB, 10:1 VSWR ruggedness, integrated ESD protection per JESD22-A114 Class IC, and NI-780S package with verified thermal resistance of 0.37 °C/W at 32 W CW.

Technical Context

This device uses a laterally diffused MOS (LDMOS) structure optimized for broadband WiMAX infrastructure. Its internally matched input and output enable direct integration into 50 Ω systems without external matching networks across 1600–1660 MHz, while series-equivalent large-signal impedance data (e.g., Z_source = 0.96 − j3.07 Ω at 1600 MHz) supports precise PA design.

Thermal performance is defined by junction-to-case resistance of 0.37 °C/W at 32 W CW (T_C = 75°C), enabling stable operation up to T_J = 225°C. The gate threshold voltage (1.2–2.7 V) and quiescent gate voltage (2.0–3.5 V) support precise Class C biasing, and the extended negative V_GS range (−6.0 V) improves linearity control under high-PAR signals.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), flanged ceramic/metal hermetic package with solderable baseplate for thermal management. Dimensions: 20.45–20.70 mm × 9.65–9.91 mm × 4.32–5.33 mm (L×W×H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF7S16150HSR3, the MRF7S16150HR3 offers superior thermal resistance for higher-CW operation, while the AFM906S trades 30 W P1dB headroom and 1.9% efficiency for potentially lower procurement cost-neither is pin-compatible without layout verification due to flange mounting variations.

Availability

MRF7S16150HSR3 is available at Aetrix Electronics and suitable for WiMAX base station transmitters, WiBro infrastructure amplifiers, BWA point-to-multipoint hubs, and OFDM broadcast relay amplifiers requiring stable component supply across multi-year production cycles.

Supply support for MRF7S16150HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its Freescale acquisition.

The MRF7S16150HSR3 belongs to NXP's LDMOS RF power transistor family, engineered specifically for broadband wireless infrastructure applications demanding high efficiency, ruggedness, and linearity in 1.5–2.7 GHz bands.

FAQ

What is the maximum continuous drain current rating for the MRF7S16150HSR3?

The MRF7S16150HSR3 does not specify a maximum continuous drain current (I_D) rating. Instead, its safe operating area is defined by maximum ratings including V_DSS = +65 Vdc, V_GS = −6.0 to +10 Vdc, and T_J = 225°C. Operational limits are set by thermal constraints: at 32 W CW output, case temperature must remain ≤75°C to maintain R_θJC = 0.37 °C/W. The MRF7S16150HSR3 is rated for 150 W CW P1dB, implying peak current capability far exceeding typical quiescent values.

Does the MRF7S16150HSR3 require external input/output matching networks?

No, the MRF7S16150HSR3 is internally matched for 50 Ω operation across 1600–1660 MHz, as confirmed by Freescale's test circuit data showing Z_source and Z_load optimized for direct integration. External matching is unnecessary for baseline WiMAX operation, though narrowband optimization may use supplemental components. The MRF7S16150HSR3 datasheet explicitly states "Part internally matched both on input and output" in Table 4 footnotes.

What is the gate quiescent voltage range for the MRF7S16150HSR3 under standard WiMAX bias conditions?

Under standard WiMAX test conditions (V_DD = 28 Vdc, I_DQ = 1500 mA), the MRF7S16150HSR3 exhibits a gate quiescent voltage (V_GS(Q)) range of 2.0–3.5 Vdc, with a typical value of 2.7 Vdc. This range is validated in Table 4 of the official datasheet and enables stable Class AB/C biasing. The MRF7S16150HSR3's extended −6.0 V V_GS rating supports downward adjustment for enhanced efficiency in Class C configurations.

How does the MRF7S16150HSR3 perform under high-PAR OFDM signals like 802.16d?

The MRF7S16150HSR3 delivers 32 W average output with 8.2 dB output PAR at 0.01% CCDF probability under 802.16d 64-QAM 3/4, 4-burst, 7 MHz channel conditions. Its ACPR is −47.5 dBc at ±5.25 MHz offset, and EVM is 3.3% rms-meeting WiMAX spectral and linearity requirements. These results are measured in Freescale's 50 Ω test fixture and documented in the MRF7S16150HSR3 datasheet Figures 3 and 9.

Is the MRF7S16150HSR3 RoHS compliant and what does the 'R3' suffix indicate?

Yes, the MRF7S16150HSR3 is RoHS compliant, as stated in the Freescale datasheet Features section. The 'R3' suffix denotes tape-and-reel packaging: 250 units per 56 mm, 13-inch reel. This format supports automated surface-mount assembly and aligns with IPC/JEDEC standards for moisture sensitivity level (MSL) handling. The MRF7S16150HSR3's RoHS compliance eliminates lead and six restricted substances per EU Directive 2011/65/EU.