NXP Semiconductors MRF7S19080HSR3

Overview

MRF7S19080HSR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel enhancement-mode RF power MOSFET designed for base station amplifier stages in CDMA, W-CDMA, and TD-SCDMA systems operating between 1930–1990 MHz. It delivers 24 W average output power at 28 V with 18 dB power gain and 32% drain efficiency under single-carrier W-CDMA conditions, supporting digital predistortion correction in multicarrier cellular infrastructure.

For engineers reviewing the MRF7S19080HSR3 datasheet, MRF7S19080HSR3 pinout, MRF7S19080HSR3 application, or MRF7S19080HSR3 equivalent, key selection criteria include guaranteed 10:1 VSWR tolerance at 32 Vdc, 80 W CW P1dB compression point, integrated ESD protection (HBM Class 1C), RoHS-compliant NI-780S package, and verified performance in Class AB/C operation for PCN-PCS/cellular radio amplifiers.

Technical Context

This device employs a thermally optimized lateral MOSFET structure with internally matched input/output impedance-Z_in ≈ 1.94 − j6.25 Ω and Z_load ≈ 3.07 − j5.47 Ω at 1960 MHz-enabling simplified broadband matching in 50 Ω systems. Its gate threshold voltage (1.2–2.7 V) and quiescent gate voltage (2.0–3.5 V) support stable Class AB biasing at 750 mA IDQ.

The MRF7S19080HSR3 integrates series-equivalent large-signal impedance characterization and supports digital predistortion via low phase distortion (1.14° avg. deviation) and tight part-to-part insertion phase variation (22.3° six-sigma window), critical for linearized multicarrier amplifier designs requiring ACPR ≤ −38 dBc at ±5 MHz offset.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flange-mount package with solderable baseplate and three terminals: Drain (case), Source (pin 1), Gate (pin 2). Dimensions: 10.16 mm × 10.16 mm × 4.57 mm (0.400″ × 0.400″ × 0.180″).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM905S, the MRF7S19080HSR3 offers proven 1930–1990 MHz performance and tighter VSWR tolerance, while MRF7S19100HSR3 provides scalable headroom within identical mechanical and thermal constraints-making it the preferred alternative for capacity upgrades without redesign.

Availability

MRF7S19080HSR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA multicarrier amplifiers, and TD-SCDMA macrocell power amplifiers requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRF7S19080HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support high-reliability LDMOS transistors for cellular infrastructure.

The MRF7S19080HSR3 belongs to the MRF7S family of laterally diffused MOSFETs engineered specifically for 3G/4G macrocell and microcell base station power amplifiers demanding high efficiency, ruggedness, and linearization capability.

FAQ

What is the maximum continuous drain voltage rating for the MRF7S19080HSR3?

The MRF7S19080HSR3 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc and −0.5 Vdc. This rating is specified in Table 1 of the official datasheet and defines the absolute limit for safe DC operation. Exceeding +65 Vdc risks catastrophic failure, while reverse bias beyond −0.5 Vdc may cause gate oxide stress. The device is routinely operated at 28 Vdc for W-CDMA and 32 Vdc for VSWR testing, well within this envelope. Always observe derating guidelines for reliability-critical base station applications.

Does the MRF7S19080HSR3 require external matching components in a 50 Ω system?

No-the MRF7S19080HSR3 is internally matched for operation between 1930–1990 MHz, as confirmed by Freescale's test circuit schematics (Figures 1 and 16) and impedance data (Figure 15). Its input and output impedances are pre-tuned to near-50 Ω equivalents (e.g., Z_in ≈ 1.94 − j6.25 Ω, Z_load ≈ 3.07 − j5.47 Ω at 1960 MHz), enabling direct integration into standard 50 Ω RF layouts. External matching is optional only for fine-tuning gain flatness or optimizing ACPR in narrowband deployments.

What ESD protection level does the MRF7S19080HSR3 meet?

The MRF7S19080HSR3 meets HBM Class 1C (≥1000 V), Machine Model Class A (≥200 V), and CDM Class IV (≥1000 V) per JESD22-A114, JESD22-A115, and JESD22-C101 standards, as documented in Table 3. This multi-level protection is built into the die structure and verified 100% during production test. It ensures robust handling during PCB assembly and field service without requiring additional on-board TVS devices-critical for high-volume telecom manufacturing.

Can the MRF7S19080HSR3 be used in Class C operation for TD-SCDMA?

Yes-the MRF7S19080HSR3 supports Class C operation for TD-SCDMA, enabled by its extended negative gate-source voltage range (−6.0 V) and characterized performance in Figures 18–21. At 2017.5 MHz, it delivers >16 W average output with ALT ≤ −45 dBc and drain efficiency ≥33% in 3- and 6-carrier configurations. The device's greater negative V_GS tolerance improves turn-off margin and reduces switching losses during burst-mode transmission.

What is the thermal resistance from junction to case for the MRF7S19080HSR3?

The MRF7S19080HSR3 has a junction-to-case thermal resistance (R_θJC) of 0.60°C/W when dissipating 79 W CW at case temperature 79°C, and 0.69°C/W at 79 W CW with case temperature 81°C, per Table 2. This low value reflects the NI-780S package's efficient copper baseplate and ceramic isolation. For thermal design, assume 0.60°C/W as the primary figure for worst-case 79 W dissipation-enabling accurate junction temperature prediction using T_J = T_C + (P_D × 0.60).