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NXP Semiconductors MRF7S19100NBR1
- Part No.:
- MRF7S19100NBR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-272BB
- Datasheet:
-
MRF7S19100NBR1.pdf
- Description:
- RF MOSFET LDMOS 28V TO272-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,749
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Product details
Overview
MRF7S19100NBR1 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station final-stage amplifiers operating at 1930–1990 MHz. It delivers 29 W average output power at 28 V, achieves 17.5 dB power gain and 30% drain efficiency under single-carrier W-CDMA conditions, and supports digital predistortion correction in multicarrier amplifier systems.
For engineers reviewing the MRF7S19100NBR1 datasheet, MRF7S19100NBR1 pinout, MRF7S19100NBR1 application, or MRF7S19100NBR1 equivalent, key selection criteria include its 100 W CW P1dB, 5:1 VSWR ruggedness at 32 V, 225°C junction rating, internally matched 50 Ω input/output, and RoHS-compliant TO-270 WB-4 plastic package.
Technical Context
This device employs a laterally diffused MOS (LDMOS) structure optimized for high-efficiency linear amplification in wideband CDMA and W-CDMA infrastructure transmitters. Its internal matching network enables broadband operation across the full 1930–1990 MHz band without external tuning components, while integrated ESD protection meets Class 1C HBM, Class A MM, and Class IV CDM standards.
The MRF7S19100NBR1 operates in Class AB bias (IDQ = 1000 mA) and supports both analog and digital predistortion linearization schemes. Thermal design is enabled by a low 0.57 °C/W junction-to-case thermal resistance at 100 W CW, with case temperature limited to 150°C and maximum junction temperature rated at 225°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P1dB Output Power | 100 W CW - usable saturated output before 1 dB compression, enabling robust headroom in high-PAR signal amplification |
| W-CDMA Avg. Output | 29 W @ 1930–1990 MHz - verified average power under 3GPP Test Model 1, 64 DPCH, 7.5 dB PAR |
| Power Gain | 17.5 dB typical - sufficient gain per stage to minimize cascade complexity in macrocell PA designs |
| Drain Efficiency | 30% @ 29 W avg - reduces heat dissipation and DC power consumption in continuous-duty base station applications |
| VSWR Tolerance | 5:1 @ 32 V, 1960 MHz - withstands antenna mismatch events without damage or performance degradation |
| Junction Temp Rating | 225°C - supports high-reliability operation in thermally constrained outdoor cabinet environments |
| Thermal Resistance | 0.57 °C/W (100 W CW) - enables compact heatsink design with predictable thermal margin |
Pinout & Package
Package: TO-270 WB-4 (Case 1486-03, Style 1), plastic overmolded, surface-mount compatible with bolt-down or solder-reflow mounting per AN1907/AN3263.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; requires stable negative/positive bias (VGS(Q) = 2–4 Vdc); internally ESD-protected |
| Pin 2 | Drain | High-power RF output node; electrically connected to exposed metal tab for thermal conduction |
| Pin 3 | Source | RF ground reference and DC return path; tied to tab and PCB ground plane for low-inductance layout |
| Pin 4 | Source | Secondary source connection; paralleled with Pin 3 to reduce bondwire inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| 100% PAR-tested output capability | Guarantees minimum 29 W avg. W-CDMA output across production lot, eliminating post-test screening overhead |
| Internally matched 50 Ω I/O | Eliminates need for external matching networks in standard 50 Ω systems, reducing BOM count and layout sensitivity |
| Integrated ESD protection | Meets JESD22-A114 Class 1C (HBM), enabling robust handling during assembly and field service without added TVS |
| Designed for DPD systems | Exhibits stable AM/AM and AM/PM characteristics across 3.84 MHz bandwidth, supporting real-time digital predistortion |
| 225°C capable plastic package | Enables higher ambient operating temperatures than conventional plastic RF transistors, extending lifetime in sealed enclosures |
Applications
| CDMA Base Station Transmitter | W-CDMA Macrocell Amplifier |
|---|---|
Use Scenario: Final-stage power amplification in 1930–1990 MHz CDMA base station cabinets with multicarrier signals and dynamic load variations. IC Role / Device Role / Timing Role: High-efficiency RF power transistor operating in Class AB, delivering 29 W avg. output with 30% drain efficiency and 17.5 dB gain. Use Value: Enables compact, air-cooled PA modules meeting IS-95 spectral mask and ACLR requirements without external harmonic filtering. |
Use Scenario: Linearized final amplifier in 3G W-CDMA macrocells using digital predistortion to meet stringent ACPR < −38 dBc at ±5 MHz offset. IC Role / Device Role / Timing Role: Lateral N-channel MOSFET with characterized large-signal impedance parameters for precise DPD model extraction. Use Value: Delivers 6.1 dB PAR handling at 0.01% CCDF probability and maintains <1 dB gain flatness over 60 MHz bandwidth for stable DPD convergence. |
| Wireless Local Loop (WLL) | PCN/PCS Cellular Repeaters |
Use Scenario: High-reliability outdoor amplifier in licensed 1.9 GHz WLL backhaul links requiring >100,000-hour MTTF under continuous duty. IC Role / Device Role / Timing Role: Ruggedized RF power transistor rated for 225°C junction temperature and 5:1 VSWR survivability at 32 V. Use Value: Reduces thermal derating requirements and eliminates need for active VSWR protection circuitry in unattended remote sites. |
Use Scenario: Mid-power repeater PA stage in urban PCS/cellular coverage extension systems with space-constrained metal housings. IC Role / Device Role / Timing Role: Surface-mount RF MOSFET with TO-270 WB-4 package, compatible with automated reflow and bolt-down thermal attachment. Use Value: Supports high-volume manufacturing with RoHS-compliant tape-and-reel packaging (500 units/reel) and validated solder-reflow profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NXP MRFE6VP61K25H | Higher frequency range (1805–1880 MHz), 25 W avg., 32 V operation, ceramic package | Better suited for PCS band repeaters; lower avg. power and different thermal interface | Select when targeting 1805–1880 MHz PCS band with stricter thermal cycling requirements |
| Infineon PTVA191001EV | Same 1930–1990 MHz band, 100 W P1dB, but GaN-on-SiC technology, 50 V operation, higher gain (19 dB) | Superior efficiency (>45%) and bandwidth flatness, but requires redesigned gate bias and thermal management | Choose for new designs prioritizing efficiency and bandwidth over legacy compatibility and cost |
Compared with MRF7S19100NBR1, the MRFE6VP61K25H serves adjacent PCS bands with ceramic reliability but lower output, while the PTVA191001EV offers GaN-level efficiency and gain in the same band but demands full redesign of bias, matching, and thermal architecture.
Availability
MRF7S19100NBR1 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA macrocell amplifiers, wireless local loop (WLL) infrastructure, and PCN/PCS cellular repeaters requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for MRF7S19100NBR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, with deep expertise in LDMOS transistor design and high-reliability packaging.
The MRF7S19100NBR1 belongs to Freescale's MRF7S family of high-efficiency, internally matched RF power MOSFETs engineered specifically for 3G CDMA/W-CDMA base station applications demanding ruggedness, linearity, and thermal stability.
FAQ
What is the maximum continuous drain voltage rating for the MRF7S19100NBR1?
The MRF7S19100NBR1 has a maximum drain-source voltage rating of +65 Vdc, with safe operating area validated up to 32 Vdc continuous drain supply (VDD). This allows headroom for transient voltage spikes in base station PA stages while maintaining reliable operation at the nominal 28 Vdc bias point specified in all W-CDMA performance data for MRF7S19100NBR1.
Does the MRF7S19100NBR1 require external matching components for 50 Ω systems?
No, the MRF7S19100NBR1 is internally matched for 50 Ω input and output impedance across its 1930–1990 MHz operating band. Freescale's characterization data-including series-equivalent source and load impedances-confirms that no external matching network is needed in standard 50 Ω test fixtures, simplifying layout and reducing component count for MRF7S19100NBR1-based amplifiers.
What thermal mounting method is recommended for the MRF7S19100NBR1?
Freescale recommends either solder-reflow attachment per AN1907 or mechanical bolt-down mounting per AN3263 for the MRF7S19100NBR1's TO-270 WB-4 package. Both methods ensure low thermal resistance to heatsink; the 0.57 °C/W RθJC value assumes proper thermal interface material and flatness control. The exposed metal tab must be electrically and thermally connected to system ground.
Is the MRF7S19100NBR1 suitable for digital predistortion (DPD) linearization?
Yes, the MRF7S19100NBR1 is explicitly designed for DPD systems, with characterized large-signal impedance parameters, stable AM/AM and AM/PM behavior, and verified 6.1 dB PAR handling at 0.01% CCDF probability. Its consistent intermodulation distortion profile across tone spacing and output power enables accurate behavioral modeling for MRF7S19100NBR1-based DPD implementations.
What is the moisture sensitivity level (MSL) and peak reflow temperature for the MRF7S19100NBR1?
The MRF7S19100NBR1 is rated MSL Level 3 per J-STD-020, with a maximum package peak reflow temperature of 260°C. This allows standard lead-free reflow profiles while maintaining integrity of the 225°C-rated plastic package. The device ships in tape-and-reel format (R1 suffix = 500 units per 44 mm, 13-inch reel), ready for SMT assembly.
MRF7S19100NBR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-272BB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.93GHz ~ 1.99GHz
- Gain:
- 17.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1 A
- Power - Output:
- 29W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-272 WB-4
MRF7S19100NBR1 FAQ
1.How can I place an order for MRF7S19100NBR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF7S19100NBR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF7S19100NBR1 reliable?
The price and inventory of MRF7S19100NBR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF7S19100NBR1 is usually 5 days.
3.What payment methods are accepted for MRF7S19100NBR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF7S19100NBR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF7S19100NBR1?
MRF7S19100NBR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF7S19100NBR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF7S19100NBR1?
For technical support, including MRF7S19100NBR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF7S19100NBR1 requirements.
6.How does Aetrix verify that MRF7S19100NBR1 is sourced from the original manufacturer or authorized distributors?
All MRF7S19100NBR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF7S19100NBR1 meets industry standards.
7.What is the process for return or replacement of MRF7S19100NBR1?
All MRF7S19100NBR1 units undergo pre-shipment inspection (PSI). If there is an issue with MRF7S19100NBR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF7S19100NBR1 part is unused and in its original packaging.
Return procedure for MRF7S19100NBR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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