NXP Semiconductors MRF7S19170HSR3

Overview

MRF7S19170HSR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for high-efficiency, high-linearity cellular base station final-stage amplification in the 1930–1990 MHz band. It delivers 50 W average output power under W-CDMA modulation at 28 Vdc, achieves 17.2 dB power gain and 32% drain efficiency, and supports digital predistortion correction for ACPR improvement in CDMA/UMTS infrastructure.

For engineers reviewing the MRF7S19170HSR3 datasheet, MRF7S19170HSR3 pinout, MRF7S19170HSR3 application, or MRF7S19170HSR3 equivalent, key selection criteria include its 170 W CW P1dB capability, 5:1 VSWR ruggedness at 32 Vdc, integrated ESD protection (HBM Class 1A), RoHS-compliant NI-880 package, and verified performance under 7.5 dB PAR input signals with 3.84 MHz channel bandwidth.

Technical Context

This device operates as a Class AB or Class C RF power amplifier stage, featuring internally matched input and output impedances optimized for 50 Ω systems across 1930–1990 MHz. Its lateral MOSFET architecture enables stable large-signal operation with characterized series-equivalent impedance parameters (e.g., Z_source = 2.25 − j7.39 Ω, Z_load = 0.865 − j2.31 Ω at 1960 MHz).

Thermal design is critical: R_θJC = 0.25 °C/W at 170 W CW (case temp 80°C), with maximum junction temperature rated at 225°C and case temperature limited to 150°C. The gate threshold voltage (1.2–2.7 Vdc) and quiescent gate voltage (2.7 Vdc typical) support precise bias control for linearization in DPD-enabled transmitters.

Key Specifications

Pinout & Package

Package: NI-880 (Case 465B-03, Style 1), hermetically sealed ceramic/metal flange-mount package with integral heat slug. Dimensions conform to JEDEC MO-232AB standard; requires thermal interface material and mechanical clamping for optimal junction-to-heatsink conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF7S19170HR3, the MRF7S19170HSR3 offers identical RF performance in a more compact NI-880 package with optimized thermal pad layout, while the AFM906S trades 20% lower output power for reduced thermal stress and simplified biasing - making it suitable for space-constrained or lower-power-tier deployments.

Availability

MRF7S19170HSR3 is available at Aetrix Electronics and suitable for macrocell base stations, small cell remote radio heads, and CDMA2000 infrastructure transmitters requiring stable component supply, high-reliability RF power delivery, and long-term lifecycle support.

Supply support for MRF7S19170HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology inherited from Freescale.

The MRF7S series targets high-efficiency, high-linearity RF power amplification for 3G/4G cellular infrastructure, emphasizing ruggedness, DPD compatibility, and thermal reliability in base station final-stage designs.

FAQ

What is the maximum continuous drain voltage rating for the MRF7S19170HSR3?

The MRF7S19170HSR3 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc and –0.5 Vdc. This rating ensures safe operation under transient voltage spikes and VSWR-induced reflections in base station output stages. The device is specifically characterized for 32 Vdc operation in CW and pulsed modes, with guaranteed 5:1 VSWR survival at that voltage level. Always observe derating curves for elevated temperature operation per the official datasheet.

Does the MRF7S19170HSR3 require external matching networks for 1930–1990 MHz operation?

No, the MRF7S19170HSR3 is internally matched for 50 Ω systems across its specified 1930–1990 MHz band. Freescale's characterization data provides series-equivalent source and load impedances (e.g., Z_source = 2.25 − j7.39 Ω at 1960 MHz), enabling direct integration into standard microstrip matching circuits. External networks are optional for fine-tuning gain flatness or optimizing ACPR beyond baseline specs, but not required for functional operation.

How does the MRF7S19170HSR3 support digital predistortion (DPD) linearization?

The MRF7S19170HSR3 supports DPD through verified wideband linearity metrics: it achieves –37.5 dBc ACPR before correction and improves to <–50 dBc with memory-based DPD at 50 W avg. output. Its characterized large-signal impedance parameters, low group delay variation (4.7 ns), and stable phase response (2.06° avg. deviation) enable accurate behavioral modeling. The device's 6.2 dB output PAR handling also preserves signal integrity during DPD algorithm convergence.

What is the thermal resistance from junction to case (R_θJC) for the MRF7S19170HSR3 under full-power operation?

The MRF7S19170HSR3 has a thermal resistance of R_θJC = 0.25 °C/W when operating at 170 W CW with case temperature maintained at 80°C. This value is measured per AN1955 methodology and reflects the NI-880 package's optimized copper slug construction. For thermal design, assume junction temperature rise = 0.25 × P_diss, where P_diss = (P_in – P_out) + P_quiescent; maximum allowable T_J is 225°C.

Is the MRF7S19170HSR3 RoHS compliant and lead-free?

Yes, the MRF7S19170HSR3 is RoHS compliant and lead-free, as confirmed in the official Freescale Semiconductor documentation (Rev. 2, March 2011). The "R3" suffix denotes tape-and-reel packaging (250 units, 56 mm tape width, 13-inch reel) with fully RoHS-compliant materials and plating. No lead-containing solder or finishes are used in the NI-880 package construction or internal die attach.