NXP Semiconductors MRF7S19210HR5

Overview

MRF7S19210HR5 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel enhancement-mode RF power MOSFET designed for high-efficiency final-stage amplification in CDMA and W-CDMA base station transmitters operating from 1930 to 1990 MHz. It delivers 63 W average output power at 28 V, achieves 20 dB power gain and 29% drain efficiency under single-carrier W-CDMA conditions, and supports digital predistortion linearization in macrocell infrastructure.

For engineers reviewing the MRF7S19210HR5 datasheet, MRF7S19210HR5 pinout, MRF7S19210HR5 application, or MRF7S19210HR5 equivalent, key selection criteria include its 190 W CW P1dB capability, 5:1 VSWR ruggedness at 32 V, integrated ESD protection (HBM Class 1C), RoHS-compliant NI-780S package, and verified performance across temperature (−30°C to +85°C) with <0.02 dB/°C gain drift.

Technical Context

This device employs a thermally optimized lateral MOSFET structure with internally matched input and output impedance networks, enabling direct integration into 50 Ω systems without external matching components. Its gate threshold voltage (1.2–2.7 V) and quiescent gate voltage (2.7 V typ. at IDQ = 1400 mA) support stable Class AB biasing, while the extended negative gate-source voltage range (−6.0 V) facilitates robust Class C operation.

The MRF7S19210HR5 is characterized using series-equivalent large-signal impedance parameters (e.g., Zsource = 4.04 − j0.71 Ω, Zload = 1.61 − j0.93 Ω at 1960 MHz), enabling accurate PA design with load-pull validated compression behavior (P1dB = 54.35 dBm / 272 W at 1930 MHz). It meets stringent W-CDMA spectral mask requirements with ACPR of −33 dBc @ ±5 MHz offset in 3.84 MHz bandwidth.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flange-mount with solderable baseplate and isolated source terminal. Thermal resistance RθJC = 0.34°C/W at 190 W CW (TC = 85°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM905S and MRF7S19110HR5, the MRF7S19210HR5 uniquely combines 190 W CW P1dB, 5:1 VSWR tolerance at 32 V, and full W-CDMA characterization at 1987.5 MHz-making it the only option qualified for high-reliability PCS-band macrocell final stages demanding simultaneous linearity, efficiency, and fault resilience.

Availability

MRF7S19210HR5 is available at Aetrix Electronics and suitable for macrocell base station transmitters, W-CDMA femtocell modules, and multi-carrier Doherty amplifier designs requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for MRF7S19210HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, with deep expertise in LDMOS technology for cellular infrastructure.

The MRF7S19210HR5 belongs to NXP's MRF7S family of ruggedized RF power transistors, engineered specifically for energy-efficient, spectrally clean amplification in 3G/4G macrocell and microcell base stations.

FAQ

What is the maximum continuous drain current rating for the MRF7S19210HR5?

The MRF7S19210HR5 does not specify a maximum continuous drain current (ID) rating independent of thermal conditions. Instead, its safe operating area is defined by junction temperature (TJ ≤ 225°C), case temperature (TC ≤ 150°C), and thermal resistance (RθJC = 0.34°C/W). At 190 W CW output and TC = 85°C, the device sustains IDQ ≈ 1400 mA under typical bias conditions-verified in Freescale's functional test fixture with VDD = 28 Vdc.

Does the MRF7S19210HR5 require external matching networks for 50 Ω systems?

No-the MRF7S19210HR5 is internally matched for both input and output, enabling direct integration into standard 50 Ω RF systems. Freescale's test circuit (Figure 1) confirms operation with no external matching components, leveraging verified series-equivalent impedances: Zsource = 4.04 − j0.71 Ω and Zload = 1.61 − j0.93 Ω at 1960 MHz. External tuning may be applied for narrowband optimization, but is not required for broadband PCS-band operation.

What is the gate bias voltage required to achieve 1400 mA quiescent drain current in the MRF7S19210HR5?

In the Freescale reference test fixture, the MRF7S19210HR5 achieves IDQ = 1400 mA at VDD = 28 Vdc with a fixture gate voltage (VGG(Q)) of 4–7 Vdc, corresponding to an actual gate-source voltage (VGS(Q)) of 2.7 Vdc typ. This reflects the 2× resistive divider network used on the evaluation board. For custom designs, VGS(Q) must be set to ~2.7 Vdc using a precision bias network, as confirmed in Table 4 of the datasheet.

Is the MRF7S19210HR5 suitable for LTE applications?

Yes-the MRF7S19210HR5 is widely deployed in LTE base stations operating in Band 2 (1930–1990 MHz), particularly in legacy macrocells upgrading from W-CDMA. Its −33 dBc ACPR @ ±5 MHz offset, 5.9 dB PAR handling, and 0.9 dB gain flatness over 60 MHz meet LTE ACLR requirements. However, newer GaN-based alternatives offer superior efficiency for high-order OFDMA signals; the MRF7S19210HR5 remains optimal where LDMOS ruggedness, thermal stability, and proven field reliability are prioritized.

What thermal interface material is recommended for mounting the MRF7S19210HR5?

Freescale recommends using a thermally conductive, electrically insulating interface material with ≤0.15°C·in²/W thermal resistance (e.g., Bergquist Sil-Pad 2000 or Parker Chomerics Thermasil 3000) between the MRF7S19210HR5's metal flange and heatsink. Mounting pressure must ensure uniform contact across the entire 12.7 × 12.7 mm baseplate, and thermal paste should be avoided due to pump-out risk under thermal cycling. The device's RθJC = 0.34°C/W assumes optimal interface conditions per AN1955.