NXP Semiconductors MRF7S19210HSR3

Overview

MRF7S19210HSR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for CDMA and W-CDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 63 W average output power at 28 V, achieves 20 dB power gain and 29% drain efficiency under single-carrier W-CDMA conditions, and supports digital predistortion with 5.9 dB PAR handling at 0.01% CCDF probability.

For engineers reviewing the MRF7S19210HSR3 datasheet, MRF7S19210HSR3 pinout, MRF7S19210HSR3 application, or MRF7S19210HSR3 equivalent, key selection criteria include its 190 W CW P1dB capability, 5:1 VSWR ruggedness at 32 V, integrated ESD protection (HBM Class 1C), RoHS-compliant NI-780 package, and verified performance in Class AB/C linear amplifier stages for cellular infrastructure.

Technical Context

This device operates as a fully matched, enhancement-mode LDMOS transistor optimized for high-efficiency, high-linearity RF power amplification. Its internal input/output matching eliminates external tuning networks for standard 50 Ω systems, and its gate threshold voltage (1.2–2.7 V) and quiescent gate voltage (2.7 V typ.) support stable Class AB biasing with low-voltage control circuitry.

The MRF7S19210HSR3 features series-equivalent large-signal impedance characterization across 1880–2040 MHz, enabling accurate load-pull design. Its thermal resistance of 0.34 °C/W (at 190 W CW, TC = 85°C) and maximum junction temperature of 225°C allow sustained operation in thermally constrained macrocell PA modules.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465A-06, Style 1), ceramic/metal flange-mount with solderable baseplate and gold-plated leads. Thermal path optimized for direct heatsink mounting; case temperature rating of 150°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7S19210HR3, the MRF7S19210HSR3 offers identical RF performance but improved manufacturability for automated assembly; versus AFM905S, it trades 2 dB gain for +70 W P1dB and full 1930–1990 MHz coverage - making it the sole validated option for modern UMTS Band II base station PAs.

Availability

MRF7S19210HSR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, CDMA2000 transceivers, and digital predistortion reference amplifiers requiring stable component supply across multi-year infrastructure deployments.

Supply support for MRF7S19210HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and supply chain continuity for the MRF7S family.

The MRF7S product line was engineered specifically for high-reliability, high-efficiency cellular infrastructure amplifiers - emphasizing ruggedness, linearity, thermal stability, and seamless integration into DPD-based active antenna systems.

FAQ

What is the maximum continuous drain current rating for the MRF7S19210HSR3?

The MRF7S19210HSR3 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by maximum junction temperature (225°C), thermal resistance (0.34 °C/W), and voltage limits (VDSS = +65 V, VGS = –6 to +10 V). At 190 W CW output, typical IDQ is 1400 mA - but actual current depends on load impedance, bias point, and thermal management. Always validate current under your specific operating conditions using the device's SOA curves.

Does the MRF7S19210HSR3 require external matching networks for 50 Ω systems?

No, the MRF7S19210HSR3 is internally matched for 50 Ω operation across 1930–1990 MHz. Freescale's datasheet confirms input and output matching are integrated, and Figure 11 provides series-equivalent Zsource and Zload values (e.g., Zsource = 4.04 – j0.71 Ω at 1960 MHz) to guide minimal external stabilization. External matching is only needed for non-50 Ω architectures or narrowband optimization beyond the specified band.

What is the gate quiescent voltage required to achieve 1400 mA IDQ in the MRF7S19210HSR3?

The MRF7S19210HSR3 has a typical gate quiescent voltage (VGS(Q)) of 2.7 Vdc at VDD = 28 Vdc and IDQ = 1400 mA. However, the fixture gate voltage (VGG(Q)) - measured at the test board input - is 4–7 Vdc due to an onboard resistive divider. Designers must implement a stable, low-noise bias network that delivers 2.7 Vdc directly to the gate terminal under all operating temperatures and tolerances.

Can the MRF7S19210HSR3 be operated in Class C mode, and what design considerations apply?

Yes, the MRF7S19210HSR3 supports Class C operation due to its extended negative gate-source voltage range (–6 V), which allows deeper cutoff and higher efficiency. However, Class C use requires careful harmonic termination, precise gate drive timing, and verification of IMD and ACPR degradation. The datasheet notes this capability but characterizes performance only in Class AB/C for CDMA - full Class C validation must be performed at the system level.

Is the MRF7S19210HSR3 pin-compatible with earlier MRF7S19210H variants like the HR3 version?

Yes, the MRF7S19210HSR3 is mechanically and electrically identical to the MRF7S19210HR3 - same NI-780 package, pinout, thermal pad configuration, and RF characteristics. The "S" suffix denotes enhanced tape-and-reel packaging for SMT placement reliability, not a change in form, fit, or function. Both share the same Document Number MRF7S19210H Rev. 1 and may be interchanged in existing designs without layout modification.