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NXP Semiconductors MRF7S19210HSR5
- Part No.:
- MRF7S19210HSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S
- Datasheet:
-
MRF7S19210HSR5.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:2,142
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Product details
Overview
MRF7S19210HSR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station final-stage amplification in the 1930–1990 MHz band. It delivers 63 W average output power at 28 V, 20 dB power gain, and 29% drain efficiency under single-carrier W-CDMA conditions (1987.5 MHz, 3.84 MHz channel bandwidth, 7.5 dB PAR input). Its robust 5:1 VSWR tolerance supports high-reliability cellular infrastructure deployment.
For engineers reviewing the MRF7S19210HSR5 datasheet, MRF7S19210HSR5 pinout, MRF7S19210HSR5 application, or MRF7S19210HSR5 equivalent, key selection criteria include its guaranteed 190 W CW P1dB, integrated ESD protection (HBM Class 1C), internally matched 50 Ω input/output, RoHS-compliant NI-780S package, and suitability for digital predistortion (DPD) linearization in macrocell BTS transceivers.
Technical Context
This LDMOS transistor operates in Class AB or Class C with a gate threshold voltage of 1.2–2.7 V and quiescent gate voltage of 2.7 V at IDQ = 1400 mA. Its large-signal impedance characteristics are characterized in series-equivalent form (e.g., Zsource = 4.04 − j0.71 Ω, Zload = 1.61 − j0.93 Ω at 1960 MHz), enabling precise matching network design for broadband 60 MHz gain flatness (0.9 dB).
Thermal performance is defined by RθJC = 0.38 °C/W at 63 W CW (TC = 79°C) and junction temperature rating up to 225°C. The device supports pulsed CW operation (10 μs on, 10% duty cycle), achieving P1dB = 54.3 dBm (269–272 W) across 1930–1990 MHz with load-pull-optimized impedances.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1930–1990 MHz - Optimized for W-CDMA uplink band and CDMA2000 base station applications. |
| Output Power (Avg) | 63 W @ 28 V, 1987.5 MHz, single-carrier W-CDMA - Sustains linear operation under real-world modulation with 7.5 dB PAR input. |
| Power Gain | 20 dB typical - Enables compact driver stage design with minimal cascaded gain stages required. |
| Drain Efficiency | 29% @ 63 W Avg - Reduces thermal load and DC power consumption in high-power macrocell PA modules. |
| VSWR Tolerance | 5:1 @ 32 V, 1960 MHz, 190 W CW - Ensures rugged operation into mismatched antenna loads without damage. |
| P1dB (CW) | ≈190 W - Defines maximum usable linear output before 1 dB compression; critical for DPD convergence range. |
| ESD Rating | HBM Class 1C (≥1 kV), MM Class A - Protects against handling-induced discharge during assembly and test. |
Pinout & Package
Package: NI-780S (Case 465A-06, Style 1), thermally enhanced ceramic/metal flange-mount package with isolated source terminal. Dimensions per Freescale Doc. MRF7S19210H Rev. 1: 12.7 mm × 12.7 mm × 4.57 mm, flange temperature sensing point at center.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Flange) | High-current RF power output node | Electrically connected to metal flange; requires low-inductance thermal interface to heatsink and RF grounding. |
| Source (Tab) | Reference node for gate drive and current return | Isolated tab terminal; enables cascode or push-pull configurations without flange shorting. |
| Gate (Lead) | RF input control terminal | Low-capacitance input (Ciss = 508 pF); requires stable bias network (VGS(Q) = 2.7 V) and ESD-protected routing. |
Key Features
| Feature | Design Value |
|---|---|
| 100% PAR-tested output capability | Guarantees minimum 63 W avg. W-CDMA output under 7.5 dB PAR stress, eliminating unit-level RF screening. |
| Internally matched 50 Ω I/O | Reduces external matching complexity; enables direct integration into 50 Ω system architectures without discrete tuning. |
| Enhanced negative VGS range | Supports extended Class C operation down to –6 V, improving efficiency in envelope-tracking or Doherty carrier amplifier roles. |
| Designed for DPD systems | Characterized with series-equivalent large-signal impedances and low group delay variation (2.82 ns avg.), enabling accurate behavioral modeling. |
| RoHS-compliant packaging | NI-780S meets EU Directive 2011/65/EU; lead-free solder compatible with standard reflow profiles. |
Applications
| Macrocell Base Station PA | W-CDMA Transceiver Module |
|---|---|
|
Use Scenario: Final-stage power amplification in 3G macrocell BTS operating in 1930–1990 MHz band with multi-carrier or single-carrier W-CDMA signals. IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 63 W avg. output with ACPR ≤ –33 dBc at ±5 MHz offset. Use Value: Meets 3GPP TS 25.104 spectral mask requirements while maintaining 29% drain efficiency and 20 dB gain, reducing cooling and power supply overhead. |
Use Scenario: Integrated PA module in outdoor small cell or distributed antenna system (DAS) head-end units requiring high linearity and thermal stability. IC Role / Device Role / Timing Role: Linear RF power stage supporting digital predistortion correction with <29° phase variation over six-sigma production spread. Use Value: Enables >45 dB ACLR improvement via DPD due to consistent large-signal impedance behavior and low IMD symmetry error (15 MHz). |
| CDMA2000 Base Station | High-Power RF Test Equipment |
|
Use Scenario: Forward link amplification in CDMA2000 1xRTT base stations operating at 1930–1990 MHz with QPSK-modulated carriers. IC Role / Device Role / Timing Role: Class AB RF power switch delivering 190 W CW P1dB and 5:1 VSWR ruggedness for antenna mismatch resilience. Use Value: Eliminates need for external circulators or isolators in deployed sites, lowering BOM cost and insertion loss in transmit chain. |
Use Scenario: Solid-state RF source in automated test equipment (ATE) requiring broadband CW and modulated signal generation up to 2 GHz. IC Role / Device Role / Timing Role: High-power RF amplifier stage generating calibrated 63–190 W output for receiver sensitivity and ACLR validation. Use Value: Provides stable, repeatable output with <0.019 dB/°C gain drift and <0.008 dB/°C P1dB drift, ensuring measurement accuracy across environmental chambers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM906S | Higher frequency range (2110–2170 MHz), lower Pout (45 W avg.), same NI-780S package and 28 V operation. | Targeted for AWS and PCS bands; not suitable for 1930–1990 MHz without retuning. | Select when operating in upper 3G/LTE bands; requires full impedance redesign for MRF7S19210HSR5 footprint reuse. |
| MRF7P21150HR5 | 2.1 GHz band (2110–2170 MHz), higher Pout (150 W avg.), same 28 V supply and NI-780S package. | Optimized for LTE FDD Band 1; exhibits different large-signal Zload (1.25 − j0.85 Ω @ 2140 MHz). | Prefer for LTE macrocell upgrades; incompatible with 1930–1990 MHz matching networks without redesign. |
Compared with AFM906S and MRF7P21150HR5, the MRF7S19210HSR5 offers uniquely optimized performance at 1930–1990 MHz with verified 63 W W-CDMA output, making it the only drop-in solution for legacy CDMA/W-CDMA base station retrofits requiring no PCB layout change.
Availability
MRF7S19210HSR5 is available at Aetrix Electronics and suitable for macrocell base station manufacturing, W-CDMA transceiver module assembly, and high-power RF test equipment production requiring stable component supply and long-term lifecycle support.
Supply support for MRF7S19210HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance RF power solutions for wireless infrastructure, automotive radar, and industrial heating applications.
The MRF7S19210HSR5 belongs to NXP's legacy LDMOS RF power transistor family, engineered specifically for high-efficiency, high-linearity amplification in 3G cellular base stations operating below 2 GHz.
FAQ
What is the maximum continuous drain voltage rating for the MRF7S19210HSR5?
The MRF7S19210HSR5 has a maximum drain-source voltage rating (VDSS) of +65 Vdc and –0.5 Vdc. This rating defines safe operating limits under static and transient conditions; operation above 32 Vdc (maximum operating voltage) is not recommended for sustained use. The device is rated for 32 Vdc continuous operation with 190 W CW output capability at that voltage.
Does the MRF7S19210HSR5 require external matching components in a 50 Ω system?
No - the MRF7S19210HSR5 is internally matched for 50 Ω input and output impedance across its 1930–1990 MHz band. While Freescale's reference test circuit includes microstrip matching elements (Z1–Z23), those are for optimization and thermal management, not fundamental impedance transformation. The device can be integrated directly into 50 Ω systems with minimal external components.
What thermal resistance value applies to the MRF7S19210HSR5 at 63 W average output power?
At 63 W average output power with case temperature TC = 79°C, the MRF7S19210HSR5 exhibits a junction-to-case thermal resistance (RθJC) of 0.38 °C/W. This value is measured under specified test conditions and is used to calculate maximum allowable ambient temperature or heatsink thermal resistance for reliable operation.
Is the MRF7S19210HSR5 suitable for Class C operation in narrowband applications?
Yes - the MRF7S19210HSR5 supports Class C operation due to its extended negative gate-source voltage range (–6.0 Vdc), which improves efficiency in constant-envelope modulation schemes like FM or narrowband IoT protocols. Its greater negative VGS capability enables deeper cutoff and reduced conduction angle without gate leakage or instability.
How does the MRF7S19210HSR5 differ from the MRF7S19210HR3 variant?
The MRF7S19210HSR5 differs from the MRF7S19210HR3 primarily in tape-and-reel packaging: the "S" suffix denotes 56 mm tape width and 13-inch reel (250 units), while the "R3" suffix specifies identical quantity but may reflect earlier packaging revision. Electrically and thermally, both share identical die, pinout, specifications, and qualification data per Freescale Doc. MRF7S19210H Rev. 1.
MRF7S19210HSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 1.99GHz
- Gain:
- 20dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.4 A
- Power - Output:
- 63W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780S
MRF7S19210HSR5 FAQ
1.How can I place an order for MRF7S19210HSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF7S19210HSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF7S19210HSR5 reliable?
The price and inventory of MRF7S19210HSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF7S19210HSR5 is usually 5 days.
3.What payment methods are accepted for MRF7S19210HSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF7S19210HSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF7S19210HSR5?
MRF7S19210HSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF7S19210HSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF7S19210HSR5?
For technical support, including MRF7S19210HSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF7S19210HSR5 requirements.
6.How does Aetrix verify that MRF7S19210HSR5 is sourced from the original manufacturer or authorized distributors?
All MRF7S19210HSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF7S19210HSR5 meets industry standards.
7.What is the process for return or replacement of MRF7S19210HSR5?
All MRF7S19210HSR5 units undergo pre-shipment inspection (PSI). If there is an issue with MRF7S19210HSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF7S19210HSR5 part is unused and in its original packaging.
Return procedure for MRF7S19210HSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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