NXP Semiconductors MRF7S21080HR3

Overview

MRF7S21080HR3 from Freescale Semiconductor is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station amplifiers operating at 2110–2170 MHz. It delivers 22 W average output power at 28 Vdc, achieves 18 dB power gain and 32% drain efficiency under single-carrier W-CDMA conditions, and supports digital predistortion correction in multicarrier cellular infrastructure.

For engineers reviewing the MRF7S21080HR3 datasheet, MRF7S21080HR3 pinout, MRF7S21080HR3 application, or MRF7S21080HR3 equivalent, key selection criteria include its 2140 MHz broadband performance, 10:1 VSWR ruggedness at 32 Vdc, 80 W CW P1dB capability, integrated ESD protection (HBM Class 1C), and NI-780 package thermal resistance of 0.60 °C/W.

Technical Context

This device operates as a high-efficiency RF power amplifier stage in Class AB or Class C configurations for TD-SCDMA, PCN-PCS, and cellular radio systems. Its internally matched input and output enable direct 50 Ω system integration without external matching networks across 2110–2170 MHz.

The MRF7S21080HR3 features series-equivalent large-signal impedance characterization (e.g., Z_source = 7.16 − j11.074 Ω at 2060 MHz), supports IQ magnitude clipping with 7.5 dB PAR input, and maintains linear phase deviation of 22.3° and group delay of 6.21 ns at 80 W CW output.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), ceramic/metal flanged package with solderable baseplate for low-thermal-resistance PCB mounting. Thermal resistance R_θJC = 0.60 °C/W at 79°C case temperature and 79 W CW.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF7S21080HR3, the MRF7S21100HR3 offers higher output headroom at similar efficiency, while the AFM906S delivers superior efficiency and power density using GaN-but both require layout and bias network adjustments, not pin-compatible replacement.

Availability

MRF7S21080HR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA macrocell amplifiers, and TD-SCDMA infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for MRF7S21080HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions for wireless infrastructure, specializing in LDMOS transistor design and high-reliability packaging.

The MRF7S21080HR3 belongs to Freescale's MRF7S family of laterally diffused MOSFETs, engineered specifically for high-efficiency, digitally predistorted 3G/4G base station amplifiers operating in the 2–2.2 GHz band.

FAQ

What is the maximum continuous drain voltage rating for the MRF7S21080HR3?

The MRF7S21080HR3 has a maximum drain-source voltage (V_DSS) rating of +65 Vdc and −0.5 Vdc. This allows safe operation under transient overvoltage conditions common in base station PA stages, including 32 Vdc nominal supply with 10% overshoot. The rating is validated per Freescale's maximum ratings table and confirmed in the device's thermal derating curves.

Does the MRF7S21080HR3 require external input/output matching networks?

No-the MRF7S21080HR3 is internally matched for 50 Ω operation across 2110–2170 MHz, as stated in its features and verified in Table 4's functional test conditions. External matching is only needed for narrowband optimization or harmonic suppression; the standard test circuit uses microstrip lines solely for bias decoupling and stabilization, not fundamental impedance transformation.

What is the gate quiescent voltage (V_GS(Q)) for the MRF7S21080HR3 at 800 mA IDQ?

The gate quiescent voltage V_GS(Q) for the MRF7S21080HR3 is 2.7 Vdc typical at V_DD = 28 Vdc and I_DQ = 800 mAdc, per Table 4. This value is distinct from the fixture gate voltage V_GG(Q) (4–7 Vdc), which accounts for resistive divider losses in the test setup. Designers must use V_GS(Q) for bias network calculations.

How does the MRF7S21080HR3 perform under digital predistortion (DPD) correction?

The MRF7S21080HR3 is explicitly designed for DPD systems, with measured ACPR improving from −38 dBc (uncorrected) to −60 dBc using memory-inclusive DPD at 22 W Avg. output, as shown in Figure 10. Its characterized large-signal impedances and low phase distortion (22.3° avg. deviation) ensure stable convergence in adaptive DPD algorithms.

What thermal resistance value applies to the MRF7S21080HR3 in continuous-wave operation?

At 79°C case temperature and 79 W CW dissipation, the MRF7S21080HR3 exhibits a junction-to-case thermal resistance (R_θJC) of 0.60 °C/W, per Table 2. This value is measured per AN1955 methodology and enables accurate junction temperature estimation: T_J = T_C + (P_diss × 0.60). For 22 W Avg. W-CDMA operation, actual dissipation is ~47 W, yielding ~28°C rise above case.