NXP Semiconductors MRF7S21080HSR3

Overview

MRF7S21080HSR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for high-efficiency, broadband W-CDMA and CDMA base station amplifier stages operating at 2110–2170 MHz. It delivers 22 W average RF output power at 28 Vdc with 18 dB power gain and 32% drain efficiency under single-carrier W-CDMA conditions (PAR = 7.5 dB, 3.84 MHz channel bandwidth), and supports digital predistortion correction in multicarrier systems.

For engineers reviewing the MRF7S21080HSR3 datasheet, MRF7S21080HSR3 pinout, MRF7S21080HSR3 application, or MRF7S21080HSR3 equivalent, this device is selected for its guaranteed 10:1 VSWR tolerance at 2140 MHz, 80 W CW P1dB capability, integrated ESD protection (HBM Class 1C), and internal input/output matching-enabling robust, thermally stable PA designs in TD-SCDMA, PCN-PCS, and cellular infrastructure.

Technical Context

This LDMOS transistor operates in Class AB or Class C with a gate threshold voltage of 1.5–3 Vdc and quiescent gate voltage of 2.7 Vdc at IDQ = 800 mA. Its large-signal impedance characteristics are fully characterized: series-equivalent source impedance at 2140 MHz is 6.745 – j9.980 Ω, and load impedance is 3.889 – j6.233 Ω, enabling precise external matching network design.

The device features a negative gate-source voltage range extended to –6 Vdc for improved Class C linearity and stability, and is optimized for digital predistortion (DPD) systems-demonstrating ACPR improvement from –38 dBc (uncorrected) to below –60 dBc with memory-based DPD at 40–45 dBm output power.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flanged package with solderable baseplate for low-thermal-resistance mounting (RθJC = 0.65°C/W at 22 W CW). Dimensions per Freescale drawing 465A-06.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7S21080HSR3, the MRF7S21080HR3 offers marginally better thermal resistance but requires mechanical redesign, while the AFM906S trades ruggedness and peak power for lower cost and smaller footprint-making MRF7S21080HSR3 optimal for carrier-grade macrocell reliability and DPD linearity.

Availability

MRF7S21080HSR3 is available at Aetrix Electronics and suitable for W-CDMA macrocell base stations, CDMA2000 infrastructure equipment, and TD-SCDMA repeater systems requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for MRF7S21080HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and maintains full technical support, qualification, and manufacturing continuity for the MRF7S series.

The MRF7S family targets high-reliability cellular infrastructure applications, emphasizing ruggedness, DPD compatibility, and thermal stability in multi-carrier, high-PAR wireless standards.

FAQ

What is the maximum continuous drain voltage rating for the MRF7S21080HSR3?

The MRF7S21080HSR3 has a maximum drain-source voltage rating of +65 Vdc and –0.5 Vdc. This allows safe operation up to 32 Vdc supply (VDD) with transient margin, and supports pulsed or Class C operation with controlled negative swing. The absolute maximum rating is documented in Table 1 of the Freescale MRF7S21080H datasheet Rev. 1.

Does the MRF7S21080HSR3 require external input/output matching networks?

The MRF7S21080HSR3 is internally matched for 50 Ω systems at 2110–2170 MHz, eliminating the need for discrete input/output matching components in standard applications. However, Freescale's test circuit (Figure 1) uses microstrip tuning elements (Z1–Z16) for optimization-these are optional for fine-tuning gain flatness or ACPR, not mandatory for basic functionality.

What thermal resistance value applies to the MRF7S21080HSR3 in actual 22 W W-CDMA operation?

At 22 W average output (79 W CW equivalent), the MRF7S21080HSR3 exhibits a junction-to-case thermal resistance of 0.65°C/W, as specified in Table 2 for "Case Temperature 75°C, 22 W CW." This value is validated per AN1955 and enables accurate heatsink sizing for target case temperatures up to 150°C.

Is the MRF7S21080HSR3 pin-compatible with the earlier MRF7S21080HR3?

No-the MRF7S21080HSR3 uses the NI-780S package (Case 465A-06), while the MRF7S21080HR3 uses NI-780 (Case 465-06). Though electrically identical, their mechanical footprints differ: NI-780S has revised flange dimensions and screw hole placement, requiring PCB layout change for direct replacement.

How is ESD protection implemented in the MRF7S21080HSR3, and what standards does it meet?

The MRF7S21080HSR3 integrates on-chip ESD protection structures meeting Human Body Model Class 1C (≥1 kV), Machine Model Class A, and Charge Device Model Class IV per JESD22-A114/A115/C101. This eliminates need for external gate protection diodes in automated assembly lines and ensures robustness during handling and reflow.