NXP Semiconductors MRF7S21110HSR3

Overview

MRF7S21110HSR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel RF power MOSFET designed for high-efficiency, high-linearity W-CDMA and CDMA base station amplifier stages operating at 2110–2170 MHz. It delivers 33 W average RF output power at 28 Vdc with 17.3 dB power gain and 32.5% drain efficiency under single-carrier W-CDMA conditions (2167.5 MHz, 3.84 MHz channel bandwidth, 7.5 dB PAR), supporting digital predistortion correction in multicarrier cellular infrastructure.

For engineers reviewing the MRF7S21110HSR3 datasheet, MRF7S21110HSR3 pinout, MRF7S21110HSR3 application, or MRF7S21110HSR3 equivalent, this device is selected for its guaranteed 10:1 VSWR ruggedness, 110 W CW P1dB capability, integrated ESD protection (HBM Class 1B), and internal input/output matching - critical for robust, production-ready RF power amplifier designs in PCN/PCS and WLL systems.

Technical Context

This LDMOS transistor operates in Class AB or Class C with a gate threshold voltage of 1.2–2.7 Vdc and supports negative gate-source bias down to –6.0 Vdc for enhanced Class C stability. Its internally matched 50 Ω input and output enable simplified broadband design across the 2110–2170 MHz band without external matching networks.

Characterized using series-equivalent large-signal impedance parameters (e.g., Z_source = 2.1 – j4.7 Ω, Z_load = 2.0 – j3.5 Ω at 2140 MHz), it achieves <0.325 dB gain flatness over 60 MHz and maintains <0.028 dB/°C output power variation from –30°C to +85°C - enabling stable performance in thermally demanding macrocell environments.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flanged package with solderable baseplate and three-terminal configuration (Drain, Gate, Source). Thermal pad requires direct mounting to heatsink for reliable 150°C case temperature operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF7S21110HR3, the MRF7S21110HSR3 offers optimized thermal packaging for higher power density, while AFM905S trades linearity and DPD support for lower acquisition cost - making MRF7S21110HSR3 the preferred choice for carrier-grade W-CDMA infrastructure requiring guaranteed PAR performance and ruggedness.

Availability

MRF7S21110HSR3 is available at Aetrix Electronics and suitable for CDMA base station transmitters, W-CDMA macrocell amplifiers, wireless local loop (WLL) base units, and digital predistortion reference amplifiers requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for MRF7S21110HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, with heritage from Freescale's RF division. The company specializes in silicon-based RF power transistors for cellular infrastructure, broadcast, and industrial heating.

The MRF7S21110HSR3 belongs to NXP's MRF7S family of high-gain, high-efficiency LDMOS transistors engineered specifically for 3G/4G macrocell and microcell base station power amplifiers operating in the 1.8–2.7 GHz bands.

FAQ

What is the maximum continuous drain current rating for the MRF7S21110HSR3?

The MRF7S21110HSR3 does not specify a maximum continuous drain current (I_D) rating independent of thermal conditions. Instead, its safe operating area is defined by junction temperature (T_J ≤ 225°C), case temperature (T_C ≤ 150°C), and thermal resistance (R_θJC = 0.41°C/W at 33 W CW). At 28 Vdc and 1100 mA quiescent current, the device delivers 33 W avg. output - sustained current depends on duty cycle, heatsink performance, and ambient conditions.

Does the MRF7S21110HSR3 require external matching networks for 2140 MHz operation?

No, the MRF7S21110HSR3 is internally matched for 50 Ω operation across 2110–2170 MHz. Freescale's test circuit (Figure 1) confirms full functionality without external input/output matching components - though narrowband optimization may use minimal tuning stubs. The device's characterized source/load impedances (e.g., Z_source = 2.1 – j4.7 Ω at 2140 MHz) are provided for advanced matching design, not mandatory implementation.

What ESD protection level does the MRF7S21110HSR3 provide, and how is it verified?

The MRF7S21110HSR3 meets HBM Class 1B (≥500 V), Machine Model Class A, and CDM Class IV per JESD22-A114/A115/C101. This protection is built into the die structure and verified during 100% production testing - no external ESD diodes are required for handling or PCB-level surge immunity in typical base station environments.

Can the MRF7S21110HSR3 be used in Class C mode, and what design considerations apply?

Yes, the MRF7S21110HSR3 supports Class C operation due to its extended negative gate-source voltage range (–6.0 Vdc), which improves cutoff control and efficiency at high drive levels. Designers must ensure gate drive circuitry can deliver stable negative bias, verify stability with appropriate neutralization, and confirm thermal limits given reduced conduction angle - especially at 110 W CW output.

Is the MRF7S21110HSR3 RoHS compliant and lead-free?

Yes, the MRF7S21110HSR3 is RoHS compliant and lead-free per EU Directive 2011/65/EU. The "R3" suffix denotes tape-and-reel packaging (250 units, 56 mm tape width, 13-inch reel), and the NI-780S package uses lead-free solderable terminations and halogen-free molding compound - confirmed in Freescale Document Number MRF7S21110H Rev. 2.