NXP Semiconductors MRF7S21150HSR3

Overview

MRF7S21150HSR3 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for CDMA and W-CDMA base station amplifier stages operating at 2110–2170 MHz. It delivers 44 W average output power with 17.5 dB power gain and 31% drain efficiency at 28 V, supporting Class AB/C operation in multicarrier and digital predistortion systems.

For engineers reviewing the MRF7S21150HSR3 datasheet, MRF7S21150HSR3 pinout, MRF7S21150HSR3 application, or MRF7S21150HSR3 equivalent, key selection criteria include its 2140 MHz small-signal impedance matching (Z_source = 3.72 − j6.17 Ω, Z_load = 1.00 − j2.39 Ω), 5:1 VSWR ruggedness at 32 V, and guaranteed 100% PAR-tested 150 W CW P1dB performance.

Technical Context

This device employs a laterally diffused MOS (LDMOS) structure optimized for wideband W-CDMA signal handling, featuring internally matched input/output networks and integrated ESD protection rated to HBM Class 1C. Its gate threshold voltage (1.2–2.7 V) and quiescent gate voltage (2.7 V typ.) support stable biasing in high-linearity amplifier designs.

The MRF7S21150HSR3 operates with a fixed 28 V DC supply and 1350 mA quiescent drain current, delivering broadband gain flatness of 0.418 dB over 60 MHz and maintaining phase linearity (36.5° avg. deviation) up to 150 W CW output-enabling robust digital predistortion correction for ACPR improvement.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal hermetic package with flange-mounted thermal path and gold-plated leads. Dimensions: 20.45 × 9.65 × 4.32 mm (L × W × H), flange-mount compatible with standard RF heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF7S21150HR3, the MRF7S21150HSR3 offers identical RF performance in a revised NI-780S package with improved manufacturability; versus AFM906S, it trades bandwidth breadth for higher CW output power and superior VSWR ruggedness-making it optimal for dedicated UMTS Band I macrocell deployments.

Availability

MRF7S21150HSR3 is available at Aetrix Electronics and suitable for macrocell base stations, W-CDMA multicarrier transmitters, CDMA2000 infrastructure, fixed wireless access links, and digital predistortion amplifier modules requiring stable component supply and long-lifecycle support.

Supply support for MRF7S21150HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its acquisition of Freescale.

The MRF7S21150HSR3 belongs to NXP's high-power LDMOS transistor product line, engineered specifically for cellular infrastructure applications demanding high linearity, efficiency, and ruggedness in 3G/4G base station power amplifiers.

FAQ

What is the maximum continuous drain voltage rating for the MRF7S21150HSR3?

The MRF7S21150HSR3 has a maximum drain-source voltage rating (V_DSS) of +65 Vdc, with a minimum of −0.5 Vdc. This allows safe operation under transient conditions up to 32 Vdc supply while maintaining margin against voltage spikes in RF amplifier circuits. The MRF7S21150HSR3 is rated for 32 Vdc continuous operation per its functional test conditions and thermal derating curves.

Does the MRF7S21150HSR3 require external input/output matching networks?

No, the MRF7S21150HSR3 is internally matched for both input and output at 50 Ω in the 2110–2170 MHz band. Its series-equivalent source and load impedances (e.g., Z_source = 3.72 − j6.17 Ω at 2140 MHz) are characterized for direct integration into standard microstrip-based matching networks. The MRF7S21150HSR3 eliminates the need for discrete broadband matching components in most Class AB amplifier designs.

What is the thermal resistance junction-to-case for the MRF7S21150HSR3 at 147 W CW?

The MRF7S21150HSR3 has a thermal resistance (R_θJC) of 0.33 °C/W when operating at 147 W CW with case temperature maintained at 80°C. This value is confirmed in Table 2 of the official datasheet and enables precise heatsink sizing for macrocell base station thermal management. The MRF7S21150HSR3's low R_θJC supports high-power density layouts without forced-air cooling in many deployments.

How does the MRF7S21150HSR3 support digital predistortion (DPD) systems?

The MRF7S21150HSR3 supports DPD through exceptional phase linearity (36.5° average deviation from linear phase at 150 W CW) and tight part-to-part insertion phase variation (1.45° six-sigma window). Its stable gain vs. temperature (0.013 dB/°C) and predictable PAR compression behavior enable accurate real-time correction models. The MRF7S21150HSR3 is explicitly designed for DPD error correction systems per its datasheet feature list.

What is the ESD protection level of the MRF7S21150HSR3 according to JESD22-A114?

The MRF7S21150HSR3 meets Human Body Model (HBM) Class 1C per JESD22-A114, corresponding to ≥2 kV ESD withstand capability. This is verified in Table 3 of the datasheet and ensures robust handling during PCB assembly and field maintenance. The MRF7S21150HSR3 also complies with Machine Model (Class A) and Charge Device Model (Class IV) standards for comprehensive ESD resilience.