NXP Semiconductors MRF7S21170HR3

Overview

MRF7S21170HR3 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel enhancement-mode RF power MOSFET designed for high-efficiency, high-linearity amplification in 2110–2170 MHz CDMA and W-CDMA base station transmitters. It delivers 50 W average output power at 28 V with 16 dB power gain and 31% drain efficiency under single-carrier W-CDMA conditions, and supports Class AB/C operation in multicarrier and Doherty amplifier architectures.

For engineers reviewing the MRF7S21170HR3 datasheet, MRF7S21170HR3 pinout, MRF7S21170HR3 application, or MRF7S21170HR3 equivalent, this device is selected for its guaranteed 5:1 VSWR ruggedness at 32 V, 170 W CW P1dB, integrated ESD protection (HBM Class 1A), and internal input/output matching optimized for 50 Ω systems in cellular infrastructure designs.

Technical Context

This LDMOS transistor operates as a final-stage RF power amplifier core in macrocell and remote radio head (RRH) transmitters. Its series-equivalent large-signal impedance parameters (e.g., Z_source = 4.40 – j9.42 Ω, Z_load = 0.92 – j2.76 Ω at 2140 MHz) are characterized for direct integration into broadband matching networks without external harmonic tuning.

The device features a negative gate-source voltage range extended to –6.0 Vdc for stable Class C biasing, supports digital predistortion (DPD) correction with <–37 dBc ACPR at ±5 MHz offset, and maintains <0.015 dB/°C gain variation across –30°C to +85°C ambient temperature.

Key Specifications

Pinout & Package

Package: NI-880S (Case 465C-03), flanged ceramic/metal hermetic package with solderable baseplate for direct thermal mounting to heatsink. Dimensions: 22.56 mm × 22.58 mm × 4.45 mm (L × W × H), 3-pin configuration (Gate, Drain, Source).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF7S21170HSR3 and AFM906S, the MRF7S21170HR3 offers the highest CW output power (170 W) specifically optimized for the 2110–2170 MHz band, making it the preferred choice for dedicated UMTS Band I macrocell and RRH deployments where spectral efficiency and thermal margin are prioritized over multi-band flexibility.

Availability

MRF7S21170HR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, fixed wireless access (WLL) systems, and CDMA2000 picocell amplifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for telecom infrastructure programs.

Supply support for MRF7S21170HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale Semiconductor in 2015 and continues to manufacture, support, and extend the RF Power portfolio for cellular infrastructure, broadcast, and industrial heating applications.

The MRF7S21170HR3 belongs to the MRF7S family of high-efficiency LDMOS transistors engineered specifically for 3G/4G base station power amplifiers operating between 1.8–2.2 GHz, emphasizing ruggedness, linearity, and thermal reliability in continuous-wave and modulated signal environments.

FAQ

What is the maximum continuous drain current rating for the MRF7S21170HR3?

The MRF7S21170HR3 does not specify a maximum continuous drain current (I_D) rating independent of thermal conditions. Its safe operating area is defined by junction temperature (T_J ≤ 225°C), case temperature (T_C ≤ 150°C), and thermal resistance (R_θJC = 0.31°C/W at 170 W CW). At 28 V and 1400 mA quiescent current, the device delivers 50 W average output in W-CDMA operation-current must be derated per thermal design to maintain T_J < 225°C.

Does the MRF7S21170HR3 require external input/output matching networks?

No-the MRF7S21170HR3 is internally matched for 50 Ω systems across 2110–2170 MHz. Freescale's datasheet provides series-equivalent source and load impedances (e.g., Z_source = 4.40 – j9.42 Ω, Z_load = 0.92 – j2.76 Ω at 2140 MHz) to guide matching network design, but no discrete matching components are required for basic functional operation in the specified band.

What is the gate threshold voltage range for the MRF7S21170HR3?

The gate threshold voltage (V_GS(th)) for the MRF7S21170HR3 is specified as 1.2 Vdc minimum to 2.7 Vdc maximum, measured at V_DS = 10 Vdc and I_D = 372 µAdc. This range ensures consistent turn-on behavior across process variation while supporting stable Class AB biasing with V_GS(Q) = 2.7 Vdc typical at I_DQ = 1400 mA.

Can the MRF7S21170HR3 be used in Class C amplifier configurations?

Yes-the MRF7S21170HR3 is explicitly designed for Class C operation, featuring an extended negative gate-source voltage range (–6.0 Vdc) to support deep cutoff biasing. Its optimized transconductance and capacitance profile (C_rss = 0.9 pF, C_oss = 703 pF) enable high-efficiency switching-mode amplification in tuned RF power stages for narrowband applications.

What is the thermal resistance from junction to case (R_θJC) for the MRF7S21170HR3?

The thermal resistance from junction to case (R_θJC) for the MRF7S21170HR3 is 0.31°C/W when operating at 170 W CW with case temperature maintained at 80°C. This value is measured per AN1955 methodology and reflects the device's high thermal conductivity ceramic/metal package (NI-880S, Case 465C-03), enabling efficient heat transfer to external heatsinks in base station PA modules.