NXP Semiconductors MRF7S21210HR5

Overview

MRF7S21210HR5 from NXP Semiconductors (formerly Freescale) is a 2110–2170 MHz, 63 W average RF power LDMOS transistor designed for CDMA and W-CDMA base station final-stage amplification. It operates at 28 V DC with 1400 mA quiescent drain current, delivers 18.5 dB power gain and 29% drain efficiency under single-carrier W-CDMA conditions, and supports Class AB/C operation in digital predistortion systems.

For engineers reviewing the MRF7S21210HR5 datasheet, MRF7S21210HR5 pinout, MRF7S21210HR5 application, or MRF7S21210HR5 equivalent, key selection criteria include its 2140 MHz broadband gain flatness (1.2 dB over 60 MHz), 5.9 dB PAR handling at 0.01% CCDF probability, –33 dBc ACPR at ±5 MHz offset, and capability to withstand 5:1 VSWR at 190 W CW output.

Technical Context

This N-channel enhancement-mode lateral MOSFET features internally matched input/output impedances optimized for 50 Ω systems across 2110–2170 MHz. Its large-signal series-equivalent impedance parameters (e.g., Z_source = 4.34 – j1.05 Ω, Z_load = 1.32 – j0.99 Ω at 2140 MHz) are characterized for direct integration into high-efficiency DPD-capable PA stages.

The device integrates ESD protection rated to HBM Class 1C, supports gate-source voltage range of –6.0 to +10 V, and exhibits thermal resistance R_θJC = 0.37 °C/W at 63 W CW operation with case temperature of 72°C - enabling robust thermal management in densely packed macro base station modules.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), ceramic/metal flanged package with solderable baseplate for low-thermal-resistance mounting. Dimensions per Freescale drawing 465A-06.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM906S and MRF7S21150HSR5, the MRF7S21210HR5 provides optimal balance of W-CDMA linearity (–33 dBc ACPR), ruggedness (5:1 VSWR), and manufacturability (100% PAR tested), making it the preferred choice for mainstream macro base station deployments requiring field-proven reliability.

Availability

MRF7S21210HR5 is available at Aetrix Electronics and suitable for macro base station transmitters, remote radio heads, CDMA2000 infrastructure upgrades, and multi-carrier cellular equipment requiring stable component supply and long-term lifecycle support.

Supply support for MRF7S21210HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its acquisition of Freescale.

The MRF7S21210HR5 belongs to NXP's high-reliability LDMOS RF power transistor product line, engineered specifically for cellular infrastructure applications demanding high efficiency, linearity, and ruggedness in 3G/4G base station power amplifiers.

FAQ

What is the maximum continuous drain current rating for the MRF7S21210HR5?

The MRF7S21210HR5 has no absolute maximum continuous drain current rating specified independently; instead, its safe operating area is defined by junction temperature (T_J ≤ 225°C), case temperature (T_C ≤ 150°C), and thermal resistance (R_θJC = 0.37 °C/W at 63 W CW). At 28 V DC and 1400 mA quiescent current, the device delivers 63 W average RF output under W-CDMA conditions - this IDQ point is the validated design center for linear operation. Exceeding 1400 mA without corresponding thermal derating risks exceeding T_J limits.

Does the MRF7S21210HR5 require external matching networks for 2140 MHz operation?

No, the MRF7S21210HR5 is internally matched for 50 Ω systems across 2110–2170 MHz. Freescale's characterization data confirms Z_source = 4.34 – j1.05 Ω and Z_load = 1.32 – j0.99 Ω at 2140 MHz, enabling direct integration into standard microstrip-based PA layouts. External matching is only needed if system-level impedance transformation (e.g., to 25 Ω or 75 Ω) or bandwidth extension beyond 60 MHz is required - verified using the test circuit schematics in the MRF7S21210H datasheet Rev. 2.

What is the guaranteed minimum ACPR performance of the MRF7S21210HR5 in W-CDMA applications?

The MRF7S21210HR5 guarantees ACPR ≥ –31 dBc (minimum) at ±5 MHz offset in 3.84 MHz channel bandwidth under single-carrier W-CDMA conditions (V_DD = 28 V, I_DQ = 1400 mA, P_out = 63 W avg., f = 2167.5 MHz, input PAR = 7.5 dB @ 0.01% CCDF). The typical value is –33 dBc, and this specification is 100% tested during production screening - ensuring every MRF7S21210HR5 unit meets cellular spectral mask requirements without binning or post-test calibration.

Can the MRF7S21210HR5 be used in Class C mode for narrowband applications?

Yes, the MRF7S21210HR5 supports Class C operation due to its extended negative gate-source voltage range (–6.0 V), which allows deeper gate bias cutoff and improved efficiency in constant-envelope modulation schemes like GSM or narrowband IoT. However, its primary characterization and reliability validation focus on Class AB W-CDMA and CDMA2000 - Class C use requires independent thermal and stability validation at the target frequency and output power, especially given its 225°C max junction temperature limit.

What is the thermal resistance (R_θJC) of the MRF7S21210HR5 under 63 W average output conditions?

The MRF7S21210HR5 has a measured thermal resistance R_θJC = 0.37 °C/W when operating at 63 W average output with case temperature maintained at 72°C - as documented in Table 2 of the MRF7S21210H datasheet Rev. 2. This value is derived from calibrated thermal measurement methodology per AN1955 and reflects real-world conduction path performance from silicon junction to metal tab under representative W-CDMA duty cycle and power dissipation.