NXP Semiconductors MRF7S21210HSR3

Overview

MRF7S21210HSR3 from NXP Semiconductors (formerly Freescale) is a 63 W average, 2110–2170 MHz RF power LDMOS transistor designed for CDMA and W-CDMA base station amplifiers operating at 28 Vdc with 1400 mA quiescent drain current. It delivers 18.5 dB power gain and –33 dBc ACPR at 5 MHz offset in 3.84 MHz channel bandwidth under single-carrier W-CDMA modulation with 7.5 dB input PAR.

For engineers reviewing the MRF7S21210HSR3 datasheet, MRF7S21210HSR3 pinout, MRF7S21210HSR3 application, or MRF7S21210HSR3 equivalent, this page provides verified RF performance data, thermal derating curves, ESD protection class ratings, series-equivalent impedance values across frequency, and tape-and-reel packaging details (250 units, 56 mm tape width, 13-inch reel).

Technical Context

This N-channel enhancement-mode lateral MOSFET features internal input/output matching optimized for 2110–2170 MHz cellular infrastructure use. Its gate threshold voltage (1.2–2.7 Vdc), 0.33 °C/W junction-to-case thermal resistance at 190 W CW, and integrated ESD protection (HBM Class 1C, MM Class A) support robust Class AB/C operation in digital predistortion (DPD) linearization systems.

The device is characterized with series-equivalent large-signal impedance parameters (e.g., Z_source = 4.34 – j1.05 Ω, Z_load = 1.32 – j0.99 Ω at 2140 MHz), enabling accurate broadband matching network design. It sustains 5:1 VSWR at 32 Vdc and 2140 MHz with 190 W CW output, and operates up to 225°C junction temperature with 150°C case limit.

Key Specifications

Pinout & Package

Package: NI-780 (Case 465A-06, Style 1), ceramic/metal flanged package with solderable baseplate for low-thermal-resistance mounting. Dimensions per Freescale Mechanical Outline Rev. 2 (2011).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFM906S and MRF7S21150HSR3, the MRF7S21210HSR3 delivers higher output power and superior ACPR performance specifically within the 2110–2170 MHz W-CDMA band, making it the optimal choice for full-bandwidth Band I base station deployments requiring guaranteed 63 W linearity and thermal resilience.

Availability

MRF7S21210HSR3 is available at Aetrix Electronics and suitable for macrocell base station transmitters, remote radio heads, CDMA2000 infrastructure amplifiers, and digital predistortion calibration platforms requiring stable component supply and long-lifecycle support.

Supply support for MRF7S21210HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in high-performance RF power solutions for wireless infrastructure, automotive radar, and industrial heating applications.

The MRF7S21210HSR3 belongs to NXP's legacy RF Power LDMOS portfolio, originally developed by Freescale for cellular base station applications demanding high linearity, ruggedness, and thermal reliability in 3G/4G macrocell deployments.

FAQ

What is the maximum continuous drain current rating for MRF7S21210HSR3?

The MRF7S21210HSR3 has no standalone maximum continuous drain current rating; its safe operating area is defined by junction temperature (225°C max), case temperature (150°C max), and thermal resistance (0.33 °C/W). At TC = 25°C, it supports 253 W CW, derating linearly by 1.5 W/°C above 25°C. The 1400 mA IDQ value cited in W-CDMA test conditions reflects quiescent bias, not absolute current limit.

Does MRF7S21210HSR3 require external matching components for 2140 MHz operation?

Yes, MRF7S21210HSR3 is internally matched but still requires external input and output matching networks to achieve specified performance. Freescale's test circuit (Fig. 3 and Table 6) uses microstrip lines and discrete capacitors (e.g., C4 = 0.3 pF, C6 = 0.2 pF) to transform 50 Ω system impedance to the device's series-equivalent Z_source and Z_load values across 2110–2170 MHz.

What is the meaning of the 'R3' suffix in MRF7S21210HSR3?

The 'R3' suffix indicates tape-and-reel packaging: 250 units per reel, 56 mm tape width, and 13-inch reel diameter. This packaging format is optimized for automated SMT placement in high-volume RF power amplifier module manufacturing and ensures ESD-safe handling per Class 1C HBM requirements.

Can MRF7S21210HSR3 be used in Class C mode for narrowband applications?

Yes, MRF7S21210HSR3 supports Class C operation due to its extended negative gate-source voltage range (–6.0 Vdc) and optimized gate structure. Its datasheet explicitly states suitability for Class C in CDMA base station applications, and the greater negative V_GS range improves turn-off margin and harmonic suppression in tuned narrowband amplifiers.

How does the thermal resistance of MRF7S21210HSR3 vary with output power level?

The thermal resistance R_θJC of MRF7S21210HSR3 is specified as 0.33 °C/W at 190 W CW with case temperature at 80°C, and 0.37 °C/W at 63 W CW with case temperature at 72°C. This variation reflects measurement conditions-not intrinsic parameter drift-and confirms stable thermal performance across its rated power range when mounted per NI-780 mechanical guidelines.