NXP Semiconductors MRF7S21210HSR5

Overview

MRF7S21210HSR5 from NXP Semiconductors (formerly Freescale) is a laterally diffused N-channel enhancement-mode RF power MOSFET designed for 2110–2170 MHz CDMA/W-CDMA base station final-stage amplification. It delivers 63 W average output power at 28 V, 1400 mA quiescent drain current, with 18.5 dB power gain and −33 dBc ACPR in 3.84 MHz channel bandwidth under single-carrier W-CDMA modulation.

For engineers reviewing the MRF7S21210HSR5 datasheet, MRF7S21210HSR5 pinout, MRF7S21210HSR5 application, or MRF7S21210HSR5 equivalent, this device is selected for high-efficiency, digitally predistorted cellular infrastructure transmitters requiring robust 5:1 VSWR tolerance, guaranteed PAR handling, and integrated ESD protection in NI-780S package.

Technical Context

This LDMOS transistor operates in Class AB or Class C with internally matched input/output impedances optimized for 2110–2170 MHz band. Its large-signal series-equivalent impedance parameters (e.g., Z_source = 4.34 − j1.05 Ω, Z_load = 1.32 − j0.99 Ω at 2140 MHz) are characterized for direct integration into broadband matching networks without external tuning.

The device supports digital predistortion (DPD) via low group delay variation (2.5 ns avg.), tight phase linearity (1.1° avg. deviation), and stable gain flatness (1.2 dB over 60 MHz). Its −6.0 to +10 V_GS rating enables extended negative gate bias for improved Class C efficiency and thermal robustness up to T_J = 225°C.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), thermally enhanced ceramic/metal flange-mount package with solderable baseplate and 3-terminal configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power MOSFET applications.

Compared with MRF7S21210HR5, MRF7S21210HSR5 offers superior thermal interface and compatibility with modern high-power RF PCB stackups; versus AFM906S, it provides lower gate drive complexity and broader legacy ecosystem support despite lower efficiency.

Availability

MRF7S21210HSR5 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, multi-carrier Doherty amplifiers, and wideband digital predistortion systems requiring stable component supply, long lifecycle assurance, and traceable sourcing for telecom infrastructure programs.

Supply support for MRF7S21210HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, formed from the acquisition of Freescale Semiconductor in 2015. The company specializes in silicon and GaN RF transistors for wireless infrastructure, broadcast, and industrial heating.

The MRF7S21210HSR5 belongs to NXP's LDMOS RF power transistor family, engineered specifically for energy-efficient, thermally robust cellular base station amplifiers operating in licensed sub-3 GHz spectrum bands.

FAQ

What is the maximum continuous drain current rating for MRF7S21210HSR5?

The MRF7S21210HSR5 does not specify a standalone maximum continuous drain current (I_D) rating. Instead, its safe operating area is defined by voltage, power, and thermal limits: V_DS ≤ +65 V, P_DC ≤ 253 W at T_C = 25°C (derating 1.5 W/°C above), and T_J ≤ 225°C. At typical 28 V operation with 1400 mA quiescent current, the device sustains 63 W average RF output under W-CDMA modulation without exceeding thermal limits.

Does MRF7S21210HSR5 require external input/output matching networks?

No, the MRF7S21210HSR5 is internally matched for 50 Ω systems across 2110–2170 MHz. Its characterized source and load impedances (e.g., Z_source = 4.34 − j1.05 Ω, Z_load = 1.32 − j0.99 Ω at 2140 MHz) are intended for direct integration into microstrip-based matching circuits per Freescale's published test fixture. External lumped-element matching is unnecessary for standard applications but may be added for narrowband optimization.

What is the gate threshold voltage range for MRF7S21210HSR5?

The gate threshold voltage (V_GS(th)) for MRF7S21210HSR5 is specified as 1.2 V minimum, 2.0 V typical, and 2.7 V maximum, measured at V_DS = 10 V and I_D = 513 μA. This range ensures consistent turn-on behavior across process variation and supports stable Class AB biasing with V_GS(Q) = 2.7 V typical at I_DQ = 1400 mA and V_DD = 28 V.

How does MRF7S21210HSR5 support digital predistortion (DPD) systems?

The MRF7S21210HSR5 supports DPD through low group delay variation (2.5 ns average), tight phase linearity (1.1° deviation over 60 MHz), and characterized large-signal impedance data. Its IMD symmetry (15 MHz) and predictable memoryless distortion enable accurate behavioral modeling. The device's 100% PAR testing ensures consistent peak power capability, reducing DPD loop convergence time and residual error in live W-CDMA/LTE signals.

What is the difference between MRF7S21210HSR3 and MRF7S21210HSR5?

The MRF7S21210HSR5 and MRF7S21210HSR3 share identical die, electrical specifications, and NI-780S package. The suffix "R5" denotes 500-unit tape-and-reel packaging (56 mm tape width, 13-inch reel), while "R3" indicates 250-unit packaging. Both are RoHS-compliant and functionally interchangeable; selection depends solely on production volume and SMT line feed requirements.