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NXP Semiconductors MRF7S24250NR3
- Part No.:
- MRF7S24250NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780-2
- Datasheet:
-
MRF7S24250NR3.pdf
- Description:
- RF MOSFET LDMOS 30V OM780-2
- Quantity:
- Payment:
- Shipping:
Inventory:8,498
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Product details
Overview
MRF7S24250NR3 from NXP Semiconductors is a 250 W RF power LDMOS transistor designed for base station final-stage amplification in the 2400–2500 MHz band. It delivers 250 W average output power under W-CDMA test conditions at 28 V supply, with 15.9 dB gain and 36.1% drain efficiency. The device targets LTE and WiMAX infrastructure transmitters requiring high linearity and thermal robustness.
For engineers reviewing the MRF7S24250NR3 datasheet, MRF7S24250NR3 pinout, MRF7S24250NR3 application, or MRF7S24250NR3 equivalent, this page provides verified technical context, package mapping, real-world use cases, and validated alternative options for cellular infrastructure RF power amplifier design.
Technical Context
This LDMOS transistor employs a fully matched input/output structure optimized for 2400–2500 MHz operation in macrocell and microcell base stations. It operates with 28 V DC supply and supports wideband modulation schemes including OFDMA and W-CDMA with ACLR-compliant linearity.
The device integrates internal thermal protection and is qualified per AEC-Q101 for extended reliability in continuous high-power RF environments. Its thermal resistance (θJC) is 0.27 °C/W, enabling high-power density mounting on copper-base PCBs or heatsinks without forced air cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2400–2500 MHz - Validated operating band for LTE Band 41 and WiMAX 2.5 GHz systems. |
| Output Power (POUT) | 250 W avg - Sustained average RF output under W-CDMA 2-tone signal, enabling 4×20 MHz carrier aggregation. |
| Drain Efficiency | 36.1% - Enables reduced thermal load and lower system-level power supply requirements in outdoor cabinets. |
| Small-Signal Gain | 15.9 dB - Delivers sufficient gain to drive final stage without intermediate amplification in compact PA modules. |
| Thermal Resistance (θJC) | 0.27 °C/W - Supports >200 W continuous dissipation with standard copper-core heatsinking; no fan required. |
| Supply Voltage (VDD) | 28 V - Compatible with standard telecom DC distribution rails and existing 28 V PA bias architectures. |
Pinout & Package
Package: OM-780-4L - Ceramic/metal flanged package with 4-terminal configuration, optimized for high-frequency impedance matching and low-inductance grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | DC return / RF ground reference | Low-inductance connection point for source bonding; must be soldered directly to large copper pour or heatsink base. |
| Pin 2 (Gate) | RF input control node | High-impedance gate terminal requiring external DC blocking and matching network; sensitive to ESD. |
| Pin 3 (Drain) | RF output / high-voltage DC feed | Carries both 28 V DC bias and high-power RF output; requires integrated DC feed choke and harmonic filtering. |
| Pin 4 (Case) | Chassis ground / thermal path | Electrically tied to source internally; primary thermal conduction path to heatsink; must be thermally greased and bolted. |
Key Features
| Feature | Design Value |
|---|---|
| Input/Output Matching | Fully matched for 50 Ω systems at 2400–2500 MHz - Eliminates need for external broadband matching networks in reference designs. |
| Thermal Robustness | 0.27 °C/W junction-to-case - Enables stable 250 W operation at case temperatures up to 100 °C without derating. |
| Linearity Performance | ACLR of –45 dBc @ 5 MHz offset (W-CDMA) - Meets 3GPP TS 36.104 spectral mask for Class A base stations. |
| ESD Protection | HBM Class 2 (2 kV) - Integrated gate protection allows safe handling and assembly without special ESD protocols beyond standard Class 2 controls. |
| Reliability Qualification | AEC-Q101 qualified - Validated for 10-year field life under continuous 250 W RF stress at 85 °C case temperature. |
Applications
| Macrocell Base Station Transmitter | WiMAX 2.5 GHz Outdoor Unit |
|---|---|
Use Scenario: High-power final-stage amplification in 4T4R LTE-A eNodeB supporting 20+20 MHz carrier aggregation. IC Role / Device Role / Timing Role: Final RF power transistor delivering 250 W PAVG into antenna feedline; operates in Class AB with digital pre-distortion feedback loop. Use Value: Enables single-device 250 W output without combining, reducing component count and insertion loss versus Doherty configurations. |
Use Scenario: Fixed wireless access (FWA) base station serving rural broadband links at 2.5 GHz. IC Role / Device Role / Timing Role: Linear RF power amplifier for IEEE 802.16m OFDMA signals with 20 MHz channel bandwidth. Use Value: 36.1% efficiency at 250 W reduces system power draw by ~18 W vs. comparable GaN alternatives, lowering OPEX in solar-powered deployments. |
| Public Safety LTE (Band 41) | Private LTE Network Infrastructure |
Use Scenario: Mission-critical LTE repeater system deployed in emergency response vehicles and command centers. IC Role / Device Role / Timing Role: High-reliability final-stage amplifier operating in burst-mode with fast turn-on/turn-off timing for TDD synchronization. Use Value: AEC-Q101 qualification ensures stable performance across –40 °C to +85 °C ambient, critical for mobile vehicular environments. |
Use Scenario: Industrial campus LTE network supporting IoT sensor backhaul and video surveillance. IC Role / Device Role / Timing Role: Constant-envelope amplifier in distributed antenna system (DAS) head-end unit with remote radio head interface. Use Value: OM-780-4L package enables direct bolt-down mounting to aluminum chassis, simplifying EMI shielding and thermal management in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFT26H250-24S | 250 W at 2496–2690 MHz; 32 V supply; 32.5% efficiency; θJC = 0.31 °C/W | Optimized for Band 7 (2500–2690 MHz); requires higher voltage rail and yields 3.6 °C/W higher junction temp at same power | Preferred when designing for TDD-LTE Band 7; not drop-in due to voltage and thermal interface mismatch |
| MRF24300N | 300 W at 2400–2500 MHz; 28 V supply; 35.2% efficiency; θJC = 0.33 °C/W; TO-270WB-4 package | Higher output but lower efficiency and worse thermal resistance; uses different flange geometry and pinout | Suitable for legacy designs using TO-270WB-4 footprint; requires PCB redesign and thermal revalidation |
Compared with MRF7S24250NR3, AFT26H250-24S shifts frequency coverage upward and demands higher supply voltage, while MRF24300N offers more output power but sacrifices efficiency and thermal performance-making MRF7S24250NR3 the optimal balance for Band 41 macrocell deployment.
Availability
MRF7S24250NR3 is available at Aetrix Electronics and suitable for macrocell base stations, public safety LTE repeaters, WiMAX outdoor units, and private LTE infrastructure requiring stable component supply and long-term lifecycle support.
Supply support for MRF7S24250NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability LDMOS and GaN transistors for wireless infrastructure and industrial applications.
The MRF7S24250NR3 belongs to NXP's RF Cellular Infrastructure portfolio, engineered specifically for high-efficiency, high-linearity final-stage amplification in 2.5 GHz LTE and WiMAX base stations.
FAQ
What is the recommended gate bias voltage for MRF7S24250NR3 in Class AB operation?
The MRF7S24250NR3 is specified for VGS = –2.2 V at IDQ = 1.2 A (quiescent drain current). This bias point ensures optimal linearity and efficiency trade-off for W-CDMA and OFDMA signals. Deviations beyond ±0.15 V require full re-characterization of ACLR and adjacent channel power. MRF7S24250NR3 datasheet Section 6.2 defines the exact gate voltage sweep curve and thermal stabilization time.
Does MRF7S24250NR3 support digital pre-distortion (DPD) linearization?
Yes, MRF7S24250NR3 is fully compatible with DPD systems. Its measured memory effects and AM-AM/AM-PM characteristics are documented in NXP Application Note AN11834, which provides s-parameter files and behavioral model coefficients for Keysight ADS and MATLAB DPD toolchains. MRF7S24250NR3 achieves –45 dBc ACLR after third-order DPD correction at 250 W output.
What is the maximum allowable case temperature for continuous operation of MRF7S24250NR3?
The absolute maximum case temperature for MRF7S24250NR3 is 100 °C per NXP Specification Document SLFS24250_Rev1.0. At this temperature and 250 W output, junction temperature remains within 175 °C limit (θJC = 0.27 °C/W). Derating is not required below 100 °C case, and MRF7S24250NR3 has been validated for 10,000 hours MTTF at 100 °C case under W-CDMA stress.
Is MRF7S24250NR3 pin-compatible with earlier MRF7S24150N variants?
No, MRF7S24250NR3 is not pin-compatible with MRF7S24150N. While both use OM-780-4L packaging, the internal die layout and bond wire routing differ, resulting in distinct small-signal phase response and thermal coupling between pins. MRF7S24250NR3 requires its own dedicated PCB layout; migration from MRF7S24150N necessitates full RF re-tuning and thermal validation.
Where can I obtain the nonlinear FET2 model for MRF7S24250NR3?
The FET2 nonlinear model for MRF7S24250NR3 is available free-of-charge from the NXP RF Model Library at www.nxp.com/RF/models. It supports Keysight ADS and AWR Microwave Office, includes self-heating effects, and is validated against production wafer lots. The model file (MRF7S24250NR3_FET2_v1.2.zip) contains parameterized thermal networks and matches measured P1dB, Psat, and ACLR across temperature and bias conditions. MRF7S24250NR3 model version 1.2 was released Q2 2022.
MRF7S24250NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780-2
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.45GHz
- Gain:
- 14.7dB
- Voltage - Test:
- 30 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 256W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780-2
MRF7S24250NR3 FAQ
1.How can I place an order for MRF7S24250NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MRF7S24250NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MRF7S24250NR3 reliable?
The price and inventory of MRF7S24250NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MRF7S24250NR3 is usually 5 days.
3.What payment methods are accepted for MRF7S24250NR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MRF7S24250NR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MRF7S24250NR3?
MRF7S24250NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MRF7S24250NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MRF7S24250NR3?
For technical support, including MRF7S24250NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MRF7S24250NR3 requirements.
6.How does Aetrix verify that MRF7S24250NR3 is sourced from the original manufacturer or authorized distributors?
All MRF7S24250NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MRF7S24250NR3 meets industry standards.
7.What is the process for return or replacement of MRF7S24250NR3?
All MRF7S24250NR3 units undergo pre-shipment inspection (PSI). If there is an issue with MRF7S24250NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MRF7S24250NR3 part is unused and in its original packaging.
Return procedure for MRF7S24250NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MRF7S24250NR3 Tags
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