NXP Semiconductors MRF7S27130HR3

Overview

MRF7S27130HR3 from Freescale Semiconductor is a lateral N-channel RF power MOSFET designed for WiMAX base station amplifier stages operating at 2500–2700 MHz. It delivers 23 W average RF output power at 28 Vdc, 1500 mA quiescent drain current, with 16.5 dB power gain and –49 dBc ACPR at ±5.25 MHz offset under 802.16d 64-QAM 3/4 signal conditions.

For engineers reviewing the MRF7S27130HR3 datasheet, MRF7S27130HR3 pinout, MRF7S27130HR3 application, or MRF7S27130HR3 equivalent, key selection criteria include broadband WiMAX OFDM linearity (EVM = 2.2% rms), rugged 10:1 VSWR tolerance at 105 W CW, integrated ESD protection (HBM Class 1B), and internal input/output matching for simplified PCB layout in Class AB/C multicarrier amplifiers.

Technical Context

This device employs a silicon-based LDMOS structure with series-equivalent large-signal impedance characterization at 2500–2700 MHz. Its gate threshold voltage is 1.2–2.7 Vdc, and it supports a wide negative gate-source voltage range (–6.0 Vdc) to enable stable Class C operation in high-efficiency base station PAs.

The MRF7S27130HR3 features thermally optimized packaging with 0.32 °C/W junction-to-case thermal resistance at 104 W CW (TC = 80°C), enabling reliable operation up to 225°C junction temperature. It is characterized using Freescale's standard 50 Ω test fixture with defined source/load impedances (e.g., Zsource = 4.499 – j2.335 Ω at 2500 MHz).

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), ceramic/metal flanged package with solderable baseplate for direct thermal attachment. Dimensions per Freescale drawing MRF7S27130H Rev. 2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF7S27130HR3, the MRFE6VP6300HR5 offers significantly higher peak power but lacks internal matching and operates outside WiMAX's optimal efficiency zone, while the QPD1025 improves efficiency by 15 percentage points but introduces GaN-specific gate control and ESD handling requirements - making MRF7S27130HR3 the preferred choice for cost-sensitive, production-ready WiMAX PA modules requiring proven LDMOS reliability and simplified design.

Availability

MRF7S27130HR3 is available at Aetrix Electronics and suitable for WiMAX infrastructure, WiBro base stations, and broadband wireless access (BWA) equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for MRF7S27130HR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) is a global leader in RF power solutions, specializing in high-reliability semiconductor devices for wireless infrastructure and industrial systems.

The MRF7S27130HR3 belongs to Freescale's MRF7S family of LDMOS RF power transistors, engineered specifically for WiMAX, WiBro, and OFDM-based broadband wireless access systems operating in the 2.5–2.7 GHz band.

FAQ

What is the maximum continuous drain current rating for the MRF7S27130HR3?

The MRF7S27130HR3 has no standalone maximum continuous drain current rating; instead, its safe operating area is defined by thermal limits. At TC = 25°C, it supports 150 W CW operation, derating to 104 W at TC = 80°C and 23 W at TC = 69°C. The 1500 mA quiescent drain current (IDQ) specified in WiMAX test conditions reflects typical Class AB biasing, not absolute maximum current.

Does the MRF7S27130HR3 require external matching networks for 2600 MHz operation?

No, the MRF7S27130HR3 is internally matched for 2500–2700 MHz operation. Freescale's datasheet confirms internal input and output matching, with measured source/load impedances provided (e.g., Zsource = 4.499 – j2.335 Ω at 2500 MHz). External matching is optional for fine-tuning or bandwidth extension beyond the native 200 MHz range.

What is the gate threshold voltage range for the MRF7S27130HR3, and how does it affect biasing?

The MRF7S27130HR3 has a gate threshold voltage (VGS(th)) of 1.2–2.7 Vdc at VDS = 10 Vdc and ID = 348 μAdc. This relatively low and tightly controlled threshold enables precise Class AB or Class C biasing using simple resistive divider networks, as confirmed by the fixture gate quiescent voltage (VGG(Q)) range of 4–7 Vdc at IDQ = 1500 mA.

How does the MRF7S27130HR3 handle high VSWR conditions in deployed base stations?

The MRF7S27130HR3 is rated to withstand 10:1 VSWR at 32 Vdc and 2600 MHz with 105 W CW output power. This ruggedness stems from its LDMOS structure and thermal design, allowing continued operation during antenna mismatches without latch-up or permanent degradation - a critical feature verified in Freescale's reliability testing per AN1955.

Is the MRF7S27130HR3 RoHS compliant and lead-free?

Yes, the MRF7S27130HR3 is RoHS compliant and lead-free, as explicitly stated in the Freescale datasheet. It meets EU Directive 2011/65/EU requirements and is manufactured using Pb-free terminations and packaging materials, supporting environmentally compliant production for global wireless infrastructure deployments.