NXP Semiconductors MRF7S27130HR5

Overview

MRF7S27130HR5 from NXP Semiconductors (formerly Freescale) is a 2500–2700 MHz, 23 W average power, 28 V N-channel enhancement-mode lateral MOSFET RF power transistor designed for WiMAX base station final-stage amplifiers. It delivers 16.5 dB power gain and 20% drain efficiency under 802.16d OFDM signal conditions at 2700 MHz with 7 MHz channel bandwidth and 64-QAM 3/4 modulation.

For engineers reviewing the MRF7S27130HR5 datasheet, MRF7S27130HR5 pinout, MRF7S27130HR5 application, or MRF7S27130HR5 equivalent, key selection criteria include its 10:1 VSWR ruggedness at 2600 MHz, integrated ESD protection (HBM Class 1B), internally matched 50 Ω input/output, and suitability for Class AB/C multicarrier OFDM amplifier stages in licensed BWA infrastructure.

Technical Context

This LDMOS device operates with V_DD = 28 Vdc and quiescent drain current I_DQ = 1500 mA, supporting both continuous-wave (CW) and high-PAR OFDM signals up to 105 W PEP. Its series-equivalent large-signal impedance is characterized at 2500–2700 MHz, enabling direct integration into broadband matching networks without external tuning components.

The transistor features a negative gate-source voltage range down to –6.0 Vdc for stable Class C biasing, thermal resistance R_θJC = 0.36 °C/W at 23 W CW, and junction temperature rating up to 225°C. It is RoHS-compliant and supplied in tape-and-reel (R5 suffix: 50 units, 56 mm width, 13-inch reel).

Key Specifications

Pinout & Package

Package: NI-780 (Case 465-06, Style 1), hermetically sealed metal-ceramic flanged package with solderable baseplate for thermal management. Dimensions per Freescale Doc. MRF7S27130H Rev. 2, p. 10–11.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7S27130HR5, AFM70270N offers superior efficiency and power density but demands full circuit redesign, while MRF7S27130HSR5 provides identical RF performance with enhanced manufacturability-making it the preferred upgrade path for continuity in existing designs.

Availability

MRF7S27130HR5 is available at Aetrix Electronics and suitable for WiMAX base station transmitter modules, WiBro infrastructure amplifiers, and licensed BWA point-to-multipoint hubs requiring stable component supply across extended product lifecycles.

Supply support for MRF7S27130HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to support legacy LDMOS products with full documentation, modeling tools, and application engineering resources.

The MRF7S27130HR5 belongs to the MRF7S family of high-voltage LDMOS RF power transistors engineered specifically for 2.5–2.7 GHz broadband wireless infrastructure, emphasizing ruggedness, linearity, and thermal reliability in outdoor macrocell deployments.

FAQ

What is the maximum continuous drain current rating for MRF7S27130HR5?

The MRF7S27130HR5 has no absolute maximum continuous drain current rating specified independently; instead, its safe operating area is defined by junction temperature limits (T_J ≤ 225°C) and thermal resistance (R_θJC = 0.36 °C/W). At 23 W CW output with T_C = 80°C, the device draws approximately 1500 mA quiescent drain current. Higher current operation requires derating per Table 1 and thermal modeling using NXP's MTTF calculator.

Does MRF7S27130HR5 require external matching networks for 2600 MHz operation?

No, the MRF7S27130HR5 is internally matched for 50 Ω operation across 2500–2700 MHz. Freescale's test circuit (Fig. 1) uses only microstrip lines and DC blocking capacitors-no discrete inductors or transformers. The device's series-equivalent source and load impedances (Fig. 14) are provided to guide PCB-level matching if system-level optimization is needed beyond the standard configuration.

What is the gate threshold voltage range for MRF7S27130HR5?

The MRF7S27130HR5 has a gate threshold voltage V_GS(th) of 1.2–2.7 Vdc (min–max) at V_DS = 10 Vdc and I_D = 348 μAdc. Its typical gate quiescent voltage V_GS(Q) is 2.7 Vdc at V_DD = 28 Vdc and I_DQ = 1500 mA. Fixture-measured V_GG(Q) is 4–7 Vdc due to an on-board resistive divider, per Table 4 footnote 1.

Can MRF7S27130HR5 be used in Class C amplifier configurations?

Yes, the MRF7S27130HR5 supports Class C operation due to its extended negative gate-source voltage range (V_GS down to –6.0 Vdc), which enables deeper cutoff and higher efficiency in pulsed or burst-mode applications. This feature is explicitly cited in the datasheet "Features" section and validated in functional test data showing stable operation at V_GS(Q) = 2.7 Vdc with adjustable bias.

What tape-and-reel configuration does MRF7S27130HR5 use?

The MRF7S27130HR5 is supplied in R5 tape-and-reel format: 50 units per reel, 56 mm tape width, 13-inch reel diameter. This differs from the R3 option (250 units) and was introduced to support low-volume prototyping and qualification builds. Per Freescale PCN13628, R5 availability was guaranteed for two years post-release, with transition support to R3 for production ramp.