NXP Semiconductors MRF7S27130HSR3

Overview

MRF7S27130HSR3 from Freescale Semiconductor is a lateral N-channel RF power MOSFET designed for WiMAX base station final-stage amplifiers operating at 2500–2700 MHz. It delivers 23 W average RF output power at 28 Vdc, 1500 mA quiescent drain current, with 16.5 dB power gain and –49 dBc ACPR at ±5.25 MHz offset under 802.16d 64-QAM 3/4 signal conditions.

For engineers reviewing the MRF7S27130HSR3 datasheet, MRF7S27130HSR3 pinout, MRF7S27130HSR3 application, or MRF7S27130HSR3 equivalent, key selection criteria include its 225°C maximum junction temperature, 10:1 VSWR ruggedness at 2600 MHz, internally matched 50 Ω input/output, integrated ESD protection (HBM Class 1B), and RoHS-compliant NI-780S package.

Technical Context

This device operates as a Class AB/C broadband RF power amplifier stage in OFDM multicarrier systems. Its lateral LDMOS structure supports high peak-to-average ratio (PAR) signals-8.2 dB at 0.01% CCDF-with stable gain flatness of 1.2 dB over 200 MHz bandwidth and low group delay variation (±81.3° six-sigma phase spread at 2600 MHz).

Thermal design is enabled by a 0.36 °C/W junction-to-case thermal resistance at 23 W CW operation, and the device sustains 105 W CW output at TC = 80°C. Internally matched impedance (Z_source ≈ 4.4 − j2.3 Ω, Z_load ≈ 2.7 − j4.9 Ω at 2500 MHz) eliminates external matching networks for standard 50 Ω systems.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), RoHS-compliant ceramic/metal flange-mount package with integral heat slug. Dimensions per Freescale drawing: 12.7 mm × 12.7 mm × 4.06 mm, 0.36 °C/W R_θJC.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7S27130HR3, the MRF7S27130HSR3 trades 0.04 °C/W higher thermal resistance for identical RF performance in a mechanically distinct NI-780S package; versus MRFE6VP61K25H, it offers precise 23 W avg. optimization with lower BOM and thermal management overhead for fixed-wireless edge nodes.

Availability

MRF7S27130HSR3 is available at Aetrix Electronics and suitable for WiMAX base station manufacturing, WiBro infrastructure deployment, and broadband wireless access (BWA) equipment requiring stable component supply, long-lifecycle support, and RoHS-compliant RF power transistors.

Supply support for MRF7S27130HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Freescale Semiconductor (now part of NXP Semiconductors) was a leading designer of RF power solutions for wireless infrastructure, automotive radar, and industrial heating applications.

The MRF7S27130HSR3 belongs to Freescale's MRF7S family of lateral LDMOS RF power transistors, engineered specifically for high-efficiency, high-linearity OFDM amplification in licensed broadband base stations.

FAQ

What is the maximum continuous drain current rating for the MRF7S27130HSR3?

The MRF7S27130HSR3 has no absolute maximum continuous drain current rating specified; instead, its safe operating area is defined by junction temperature (T_J ≤ 225°C), case temperature (T_C ≤ 150°C), and derated power (150 W at T_C = 25°C, decreasing by 0.83 W/°C above 25°C). At 28 Vdc and 1500 mA IDQ, the device operates within its thermal limits for 23 W avg. WiMAX output.

Does the MRF7S27130HSR3 require external matching networks for 50 Ω systems?

No, the MRF7S27130HSR3 is internally matched for 50 Ω operation across 2500–2700 MHz. Freescale provides series-equivalent source and load impedances (e.g., Z_source = 4.499 − j2.335 Ω at 2500 MHz) to guide minimal external tuning-typically limited to gate bias decoupling and drain RF chokes-not full matching networks.

What ESD protection level does the MRF7S27130HSR3 provide?

The MRF7S27130HSR3 features integrated ESD protection rated to Human Body Model Class 1B (≥500 V), Machine Model Class A, and Charge Device Model Class IV per JESD22 standards-enabling robust handling during PCB assembly without requiring external ESD suppression components on the gate path.

Can the MRF7S27130HSR3 operate reliably under 10:1 VSWR conditions?

Yes, the MRF7S27130HSR3 is characterized to withstand 10:1 VSWR at 2600 MHz, 32 Vdc, delivering 105 W CW output without failure. This ruggedness is validated per Freescale's internal stress testing and supports reliable field operation in real-world antenna mismatch scenarios common in outdoor base stations.

What is the thermal resistance junction-to-case for the MRF7S27130HSR3?

The MRF7S27130HSR3 has a thermal resistance of 0.36 °C/W junction-to-case (R_θJC) when operating at 23 W CW with case temperature T_C = 69°C. This value is measured per AN1955 methodology and is critical for calculating heatsink requirements in WiMAX PA designs.