NXP Semiconductors MRF7S27130HSR5

Overview

MRF7S27130HSR5 from NXP Semiconductors (formerly Freescale) is a 2500–2700 MHz, 23 W average RF power LDMOS transistor optimized for WiMAX base station amplifiers operating at 28 Vdc with 1500 mA quiescent drain current. It delivers 16.5 dB power gain, 20% drain efficiency, and –49 dBc ACPR at 5.25 MHz offset under 802.16d 64-QAM 3/4 signal conditions. Used in outdoor broadband wireless access infrastructure.

For engineers reviewing the MRF7S27130HSR5 datasheet, MRF7S27130HSR5 pinout, MRF7S27130HSR5 application, or MRF7S27130HSR5 equivalent, key selection criteria include its 2700 MHz small-signal gain flatness (1.2 dB), 8.2 dB output PAR at 0.01% CCDF, 105 W CW VSWR ruggedness (10:1 @ 2600 MHz), and NI-780S package thermal resistance of 0.36 °C/W at 23 W.

Technical Context

This lateral N-channel enhancement-mode MOSFET employs internally matched input/output impedance networks-Z_source = 4.39 + j0.612 Ω and Z_load = 2.652 – j3.410 Ω at 2700 MHz-to simplify external matching. Its gate threshold voltage (1.2–2.7 Vdc) and wide negative V_GS range support stable Class AB/C biasing.

Thermal design leverages a low R_θJC of 0.36 °C/W (at 23 W, T_C = 69°C) and maximum junction temperature of 225°C. ESD protection meets JESD22-A114 Class 1B, JESD22-A115 Class A, and JESD22-C101 Class IV standards.

Key Specifications

Pinout & Package

Package: NI-780S (Case 465A-06, Style 1), flanged ceramic/metal overmolded package with solderable baseplate for direct heatsink mounting. Thermal resistance R_θJC = 0.36 °C/W at 23 W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF7S27130HSR5, MRF7S27130HR3 offers superior thermal performance at high CW loads but larger footprint, while AFM906S trades internal matching and ruggedness for compactness and lower bill-of-materials cost in less demanding deployments.

Availability

MRF7S27130HSR5 is available at Aetrix Electronics and suitable for WiMAX base station PA, WiBro outdoor units, and broadband wireless access (BWA) infrastructure requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for MRF7S27130HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support this LDMOS product line for wireless infrastructure.

The MRF7S series targets high-efficiency, high-linearity RF power amplification in licensed broadband wireless systems including WiMAX, WiBro, and LTE-TDD base stations.

FAQ

What is the maximum continuous-wave output power rating for MRF7S27130HSR5?

MRF7S27130HSR5 is rated for 105 W CW output power when operated at 32 Vdc with 10:1 VSWR at 2600 MHz and case temperature of 25°C. Derating applies above 25°C per the datasheet's 0.83 W/°C slope. This ruggedness rating ensures reliable operation in real-world antenna mismatch scenarios encountered in outdoor base station deployments.

Does MRF7S27130HSR5 require external matching networks?

MRF7S27130HSR5 is internally matched for both input and output, with verified source/load impedances provided (e.g., Z_source = 4.39 + j0.612 Ω, Z_load = 2.652 – j3.410 Ω at 2700 MHz). While external matching is not required for basic operation, fine-tuning networks may be added to optimize ACPR or efficiency for specific channel plans or modulation schemes in the MRF7S27130HSR5 application.

What is the gate quiescent voltage specification for MRF7S27130HSR5 under standard WiMAX bias conditions?

Under standard WiMAX test conditions (V_DD = 28 Vdc, I_DQ = 1500 mA), the gate quiescent voltage V_GS(Q) for MRF7S27130HSR5 is 2.7 Vdc typical. The fixture gate voltage V_GG(Q) is 4–7 Vdc due to an on-board resistive divider; actual gate bias must be set accordingly to achieve the target 1500 mA idle current in the MRF7S27130HSR5 circuit.

How does MRF7S27130HSR5 perform in terms of error vector magnitude (EVM) with WiMAX signals?

MRF7S27130HSR5 achieves 2.2% rms EVM under typical WiMAX 802.16d conditions (23 W avg., 64-QAM 3/4, 4 bursts, 7 MHz channel). This corresponds to –33 dB relative constellation error (RCE), confirming its suitability for high-order modulation schemes where signal fidelity directly impacts data throughput and link margin in the MRF7S27130HSR5 application.

Is MRF7S27130HSR5 RoHS compliant and lead-free?

Yes, MRF7S27130HSR5 is RoHS compliant and features a lead-free finish on its NI-780S package. The device uses halogen-free molding compound and meets EU Directive 2011/65/EU requirements. This compliance is confirmed in the Freescale/NXP product documentation and supports environmentally regulated deployments in the MRF7S27130HSR5 supply chain.