NXP Semiconductors MRF7S38010HR5

Overview

MRF7S38010HR5 from NXP Semiconductors (formerly Freescale) is an N-channel enhancement-mode lateral RF power MOSFET designed for WiMAX base station final-stage amplification in the 3400–3600 MHz band. It delivers 2 W average RF output power at 30 Vdc drain supply, achieves 15 dB small-signal power gain, maintains −49 dBc ACPR at ±5.25 MHz offset under 802.16d 64-QAM 3/4 signal conditions, and supports Class AB/C operation with 160 mA quiescent drain current.

For engineers reviewing the MRF7S38010HR5 datasheet, MRF7S38010HR5 pinout, MRF7S38010HR5 application, or MRF7S38010HR5 equivalent, key selection criteria include its 3500 MHz center-frequency performance, 10 W CW P1dB output capability, 2.05 °C/W junction-to-case thermal resistance, integrated ESD protection (HBM Class 1C), and NI-400-240 surface-mount package compatibility with broadband OFDM amplifier designs.

Technical Context

This device operates as a single-ended, internally matched RF power transistor optimized for linear multicarrier amplification in fixed wireless access infrastructure. Its large-signal series-equivalent impedance is characterized at 3400–3600 MHz (e.g., Z_load = 13.92 − j11.33 Ω at 3400 MHz), enabling simplified matching network design without external input/output tuning for standard 50 Ω systems.

The MRF7S38010HR5 employs lateral DMOS technology with a maximum junction temperature of 225°C and is rated for continuous 10:1 VSWR survivability at 32 Vdc and 3500 MHz. Its gate threshold voltage (1.2–2.7 Vdc) and quiescent gate voltage (2.0–3.5 Vdc) support stable Class C biasing while maintaining robust ESD immunity per JESD22-A114 (Class 1C).

Key Specifications

Pinout & Package

Package: NI-400-240 (Case 465I-02, Style 1), thermally enhanced plastic overmolded SMD package with exposed drain paddle for low-thermal-resistance mounting. Dimensions: 10.16 mm × 10.16 mm × 4.57 mm (L × W × H). Requires solder reflow profile compliant with IPC/JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF7S38010HR5, the MRF7S38010HSR3 offers identical RF performance but trades 0.19 °C/W higher thermal resistance for improved manufacturability in high-volume SMT lines, whereas the AFM906S sacrifices 1.5 dB gain and stricter ACPR to achieve 5% higher efficiency in space-constrained 28 V systems - making MRF7S38010HR5 optimal for WiMAX-certified 30 V infrastructure demanding −49 dBc linearity.

Availability

MRF7S38010HR5 is available at Aetrix Electronics and suitable for WiMAX base station development, fixed wireless access (FWA) CPE production, and OFDM test instrumentation requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for MRF7S38010HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture and support high-reliability LDMOS transistors for telecom infrastructure.

The MRF7S38010HR5 belongs to NXP's MRF7S family of WiMAX-optimized RF power MOSFETs, engineered specifically for linear amplification of OFDM signals in 3.4–3.6 GHz licensed spectrum used by IEEE 802.16d/e base stations.

FAQ

What is the maximum continuous drain current rating for the MRF7S38010HR5?

The MRF7S38010HR5 does not specify a maximum continuous drain current (I_D) rating; instead, it defines safe operating limits via maximum drain-source voltage (V_DS = +65 Vdc), gate-source voltage (V_GS = −6.0 to +10 Vdc), and junction temperature (T_J = 225°C). Its typical quiescent drain current is 160 mA at V_DD = 30 Vdc, and peak pulsed current is constrained by thermal design and VSWR conditions. Actual current must be derived from P_out, efficiency, and bias point using measured data from the Freescale MRF7S38010H datasheet.

Does the MRF7S38010HR5 require external matching components for 3500 MHz operation?

No, the MRF7S38010HR5 is internally matched for 3400–3600 MHz operation, meaning its input and output impedances are pre-tuned to enable direct integration into 50 Ω systems without discrete matching networks. However, the Freescale reference design (Figure 1) uses microstrip lines and chip capacitors (e.g., C1–C7) to optimize broadband performance and stability - these are not "matching" in the traditional sense but serve as bias feed, decoupling, and harmonic suppression elements essential for production-grade WiMAX PA implementation.

What is the gate threshold voltage range specified for the MRF7S38010HR5?

The MRF7S38010HR5 has a gate threshold voltage (V_GS(th)) range of 1.2 Vdc to 2.7 Vdc, measured at V_DS = 10 Vdc and I_D = 33.5 μAdc. This parameter defines the minimum gate voltage needed to initiate conduction and is critical for establishing stable Class AB/C bias points. The typical quiescent gate voltage (V_GS(Q)) under operating conditions (V_DD = 30 Vdc, I_DQ = 160 mA) is 2.7 Vdc, falling within this validated threshold window.

Can the MRF7S38010HR5 be used in 28 V DC-powered systems?

Yes, the MRF7S38010HR5 is fully rated for 28 Vdc operation (V_DD = 28 to 32 Vdc per datasheet Table 1), and Freescale characterization data shows usable performance at 28 V - including 14.5 dB gain and 15% drain efficiency at 2 W avg. output. While 30 Vdc yields optimal ACPR and gain, the device maintains functional linearity and thermal safety at 28 Vdc, making it compatible with standard telecom -48 VDC-derived intermediate bus architectures using efficient buck converters.

What is the MTTF (Mean Time To Failure) of the MRF7S38010HR5 at typical WiMAX operating conditions?

At V_DD = 30 Vdc, P_out = 2 W avg., and drain efficiency = 17%, the calculated MTTF for the MRF7S38010HR5 is approximately 1×10⁷ hours (≈1140 years) at a junction temperature of 110°C, as shown in Figure 12 of the MRF7S38010H datasheet. This value assumes ideal thermal management; actual field MTTF depends on PCB copper area, heatsink interface quality, and ambient temperature - NXP provides an online MTTF calculator at www.nxp.com/rf to model site-specific reliability.