NXP Semiconductors MRF8P20100HSR3

Overview

MRF8P20100HSR3 from NXP Semiconductors (formerly Freescale) is a dual-path, symmetrical Doherty RF power MOSFET designed for cellular base station final-stage amplification in 1805–2025 MHz bands. It delivers 20 W average W-CDMA output at 2025 MHz with 16.0 dB power gain, 44.3% drain efficiency, and –33.5 dBc ACPR under 9.9 dB PAR input. Used in macrocell BTS PA modules for CDMA and GSM EDGE infrastructure.

For engineers reviewing the MRF8P20100HSR3 datasheet, MRF8P20100HSR3 pinout, MRF8P20100HSR3 application, or MRF8P20100HSR3 equivalent, this page provides verified device identity, Doherty-specific RF performance data, thermal resistance (0.88 °C/W), ESD protection class ratings, and validated alternative options for multi-carrier amplifier design.

Technical Context

This is a laterally diffused N-channel enhancement-mode MOSFET with integrated input/output matching networks and internal ESD protection. It operates in Class AB or Class C with separate gate bias control for carrier (RFinA/VGSA) and peaking (RFinB/VGSB) paths, enabling digital predistortion (DPD) linearization in wideband systems.

The device is characterized using series-equivalent large-signal impedance parameters and common-source S-parameters across its full 1805–2025 MHz operating band. Thermal design is anchored to a maximum junction temperature of 225°C and case temperature limit of 150°C, with R_θJC = 0.88 °C/W under 20 W CW conditions at 2025 MHz.

Key Specifications

Pinout & Package

Package: NI-780S-4 (CASE 465H-02, STYLE 1), surface-mount ceramic/metal flange package with integral heat slug. Pin 1 = RFoutA/VDSA, Pin 2 = RFinB/VGSB, Pin 3 = RFinA/VGSA, Pin 4 = RFoutB/VDSB. All pins are gold-plated copper alloy with solderable terminations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF8P20100HR3, the MRF8P20100HSR3 offers identical RF performance but improved thermal interface via the NI-780S-4 package; versus AFM905S, it delivers higher gain and better ACPR in the 1900–2025 MHz range but lacks native 2.17 GHz support.

Availability

MRF8P20100HSR3 is available at Aetrix Electronics and suitable for macrocell base station PA modules, W-CDMA femtocell boosters, and GSM EDGE infrastructure requiring stable component supply, RoHS compliance, and Doherty-validated RF performance.

Supply support for MRF8P20100HSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and communications markets. Formerly Freescale Semiconductor, it acquired the RF Power portfolio in 2015.

The MRF8P20100HSR3 belongs to the MRF8P family of high-efficiency Doherty LDMOS transistors engineered specifically for 3G/4G cellular infrastructure, emphasizing thermal robustness, DPD compatibility, and production-ready validation.

FAQ

What is the maximum junction temperature rating for the MRF8P20100HSR3?

The MRF8P20100HSR3 has a maximum operating junction temperature (T_J) of 225°C, as specified in Table 1 of the official datasheet. This rating enables reliable operation in thermally constrained macrocell base station environments when paired with appropriate heatsinking and airflow. The MRF8P20100HSR3 must be operated within this limit to ensure long-term reliability and MTTF compliance.

Does the MRF8P20100HSR3 require external input/output matching networks?

No, the MRF8P20100HSR3 is internally matched for 50 Ω operation across its full 1805–2025 MHz frequency range, as confirmed in the Features section and test circuit documentation. This eliminates the need for discrete matching components in standard Doherty configurations, reducing PCB area and insertion loss. However, fine-tuning may be needed for specific PA architectures or harmonic suppression.

What is the gate threshold voltage range for the MRF8P20100HSR3?

The MRF8P20100HSR3 has a gate threshold voltage (V_GS(th)) range of 1.2 Vdc to 2.7 Vdc, measured at V_DS = 10 Vdc and I_D = 75 μAdc (Table 4). This parameter defines the minimum gate voltage required to initiate conduction and is critical for setting proper Class AB bias points. The typical value is 1.9 Vdc.

How does the MRF8P20100HSR3 support digital predistortion (DPD) linearization?

The MRF8P20100HSR3 is explicitly designed for DPD systems, featuring characterized memory effects, symmetric IMD behavior (IMDsym = 46 MHz), and stable gain flatness (0.1 dB over 15 MHz). Its validated W-CDMA and EDGE linearity metrics-including ACPR and EVM-enable accurate model-based correction. The MRF8P20100HSR3's consistent large-signal impedance profiles further simplify DPD algorithm convergence.

What is the thermal resistance (R_θJC) of the MRF8P20100HSR3 under typical W-CDMA operating conditions?

The MRF8P20100HSR3 exhibits a thermal resistance of 0.88 °C/W (junction-to-case) when operated at 28 Vdc, 20 W CW output, 2025 MHz, with I_DQA = 400 mA and V_GSB = 1.3 Vdc (Table 2). This value is measured with the case temperature held at 74°C and directly informs heatsink sizing for continuous-duty macrocell applications.